EPC9046 Quick Start Guide Datasheet by EPC

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EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015
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DESCRIPTION
This development board is in a half bridge topology with onboard gate drives, featuring the
EPC2029 eGaN® field effect transistor (FET). The purpose of this development board is to simplify
the evaluation process of these eGaN FETs by including all the critical components on a single
board that can be easily connected into any existing converter.
The development board is 2” x 2” and contains two eGaN FETs in a half bridge configuration using
the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all
critical components and layout for optimal switching performance and has additional area to
add buck output filter components on the board. There are also various probe points to facilitate
simple waveform measurement and efficiency calculation. A complete block diagram of the circuit
is given in Figure 1.
For more information on the EPC2029 eGaN FET, please refer to the datasheets available from EPC
at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide.
Development Board
EPC9046
Quick Start Guide
Half Bridge with Gate Drive
for EPC2029
Demonstration Board Notification
EPC9046 boards are intended for product evaluation purposes only and are not intended for commercial use. As evaluation tools, they are not designed for compliance with the European Union directive on
electromagnetic compatibility or any other such directives or regulations. As board builds are at times subject to product availability, it is possible that boards may contain components or assembly materials
that are not RoHS compliant. Efficient Power Conversion Corporation (EPC) makes no guarantee that the purchased board is 100% RoHS compliant. No Licenses are implied or granted under any patent
right or other intellectual property whatsoever. EPC assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or any other intellectual
property rights of any kind.
EPC reserves the right at any time, without notice, to change said circuitry and specifications.
Table 1: Performance Summary (TA = 25°C)
SYMBOL PARAMETER CONDITIONS MIN MAX UNITS
V
DD
Gate Drive Input Supply Range 7 12 V
V
IN
Bus Input Voltage Range 64 V
V
OUT
Switch Node Output Voltage 80 V
I
OUT
Switch Node Output Current
22* A
V
PWM
PWM Logic Input Voltage
Threshold
Input ‘High’
Input ‘Low’
3.5
0
6
1.5
V
V
Minimum ‘High State Input Pulse
Width
V
PWM
rise and fall time < 10ns 50 ns
Minimum ‘Low State Input Pulse
Width
V
PWM
rise and fall time < 10ns 100# ns
*Assumes inductive load, maximum current depends on die temperature – actual maximum current with be subject
to switching frequency, bus voltage and thermal cooling.
# Limited by time needed to ‘refresh high side bootstrap supply voltage.
EPC9046 QUICK START GUIDE
QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015 | | PAGE 2
EPC9046
QUICK START PROCEDURE
Figure 1: Block Diagram of Development Board
The development boards are easy to set up to evaluate the performance
of the eGaN FET. The board allows the on-board placement of buck
output components. Refer to Figure 2 for proper connect and
measurement setup and follow the procedure below:
1. With power off, connect the input power supply bus to +VIN (J5, J6)
and ground / return to –VIN (J7, J8).
2. With power off, connect the switch node of the half bridge OUT
(J3, J4) to your circuit as required.
3. With power off, connect the gate drive input to +VDD (J1, Pin-1) and
ground return to –VDD (J1, Pin-2).
4. With power off, connect the input PWM control signal to PWM
(J2, Pin-1) and ground return to any of the remaining J2 pins.
5. Turn on the gate drive supply – make sure the supply is between 7 V
and 12 V range.
6. Turn on the bus voltage to the required value (do not exceed the
absolute maximum voltage of 80 V on VOUT
7. Turn on the controller / PWM input source and probe switching node
to see switching operation.
8. Once operational, adjust the bus voltage and load PWM control
within the operating range and observe the output switching
behavior, efficiency and other parameters.
9. For shutdown, please follow steps in reverse.
NOTE. When measuring the high frequency content switch node (OUT), care must
be taken to avoid long ground leads. Measure the switch node (OUT) by placing the
oscilloscope probe tip through the large via on the switch node (designed for this
purpose) and grounding the probe directly across the GND terminals provided. See
Figure 3 for proper scope probe technique.
VDD
VIN
PWM
Input
OUT
VSW
Gate Drive Supply
Pads for Buck Output Filter
Half Bridge
with Bypass
Logic and
Dead-time
Adjust
Gate Drive
Regulator
LM5113
Gate
Driver
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QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015 | | PAGE 3
EPC9046
QUICK START PROCEDURE
Figure 3: Proper Measurement of Switch Node – OUT
Figure 2: Proper Connection and Measurement Setup
(For Efficiency
Measurement)
Gate Drive Supply
(Note Polarity)
+
7 V 12 V
+
_
PWM Input
+
VDD Supply
V
IN
(For Efficiency
Measurement)
Pads for Buck
Output Filter
VOUT
VSW
PGND
+
VOUT
V
A
IIN
_
_
_
V
See table
for max
Place probe tip in large via at OUT
Ground probe
against TP3
Minimize loop
Do not use probe ground lead
QUICK START GUIDE EPC9046 mm mm”; mu an“; m mum um ”mam
QUICK START GUIDE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015 | | PAGE 4
EPC9046
THERMAL PERFORMANCE
400 LFM
The EPC9046 development board showcases the EPC2029 eGaN FET.
These development boards are intended for bench evaluation with low
ambient temperature and convection cooling. The addition of heat-
sinking and forced air cooling can significantly increase the current rating
!
Typical Waveforms for VIN = 60 V to 5V/20 A (300 kHz) Buck converter CH1: (VPWM) Input logic signal – CH2: (IOUT) Output inductor current – CH4: (VOUT) Switch node voltage
of these devices, but care must be taken to not exceed the absolute
maximum die temperature of 150°C.
NOTE. The EPC9046 development board does not have any current or
thermal protection on board.
Table 2: Bill of Materials
Item Qty Reference Part Description Manufacturer / Part #
1 3 C4, C10, C11,
Capacitor, 1 µF, 10%, 25 V, X5R
Murata, GRM188R61E105KA12D
2 2 C16, C17
Capacitor, 100 pF, 5%, 50 V, NP0
Kemet, C0402C101K5GACTU
3 1 C9
Capacitor, 0.1 µF, 10%, 25 V, X5R
TDK, C1005X5R1E104K
4 1 C19
Capacitor, 1 µF, 10%, 25 V, X5R
C1005X5R1E105K
5 4 C21, C22, C23, C24
Capacitor, 1 µF, 10%, 100 V, X7R
TDK, CGA4J3X7S2A105K125AE
6 2 D1, D2
Schottky Diode, 30 V
Diodes Inc., SDM03U40-7
7 3 J1, J2, J9
Connector
FCI, 68001-236HLF
8 1 J3, J4, J5, J6, J7, J8
Connector
FCI, 68602-224HLF
9 2 Q1, Q2
eGaN® FET
EPC2029
10 1 R1
Resistor, 10.0 K, 5%, 1/10 W
Panasonic, ERJ-3GEY0R00V
11 2 R2, R15
Resistor, 0 Ohm, 1/8 W
Stackpole, RMCF0603ZT0R00
12 1 R4
Resistor, 47 Ohm, 1%, 1/10 W
Stackpole, RMFC0603FT47R0
13 1 R5
Resistor, 75 Ohm, 1%, 1.10 W
Stackpole, RMCF0603FT75R0
14 4 R19, R20, R23, R24
Resistor, 0 Ohm, 1/16 W
Stackpole, RMCF0402ZT0R00
15 2 TP1, TP2
Test Point
Keystone Elect, 5015
16 1 TP3
Connector
1/40th of Tyco, 4-103185-0
17 1 U1
I.C., Logic
Fairchild, NC7SZ00L6X
18 1 U2
I.C., Gate Driver
National, LM5113
19 1 U3
I.C., Regulator
Microchip, MCP1703T-5002E/MC
20 1 U4
I.C., Logic
Fairchild, NC7SZ08L6X
21 0 R14
Optional Resistor
22 0 D3
Optional Diode
23 0 P1, P2
Optional Potentiometer
Figure 4 (a) – Rising Edge Figure 4 (b) – Falling Edge
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2015 | | PAGE 5
QUICK START GUIDE EPC9046
Figure 5: Development Board Schematic
VCC
7 - 12 Vdc
C4
1µF, 25V
C10
1µF, 25V
1
2
J1
CON2
R1
10k
PWM1
GND
A
B
Y
VDD
U1
NC7SZ00L6X
See Table
SW OUT
GND
1
TP3
CON1
1
2
3
4
J8
CON4
1
2
3
4
J7
CON4
1
2
3
4
J3
CON4
1
2
3
4
J4
CON4
1
2
3
4
J6
CON4
1
2
3
4
J5
CON4
C11
1µF, 25V
1
TP2
Keystone 5015
1
TP1
Keystone 5015
R2
Zero
R14
Optional
R15
Zero
R5
75
D2
SDM03U40
R4
47
D1
SDM03U40
PWM2
VCC
OUT 1
NC 2
NC 3
GND 4
NC
5
NC
6
NC
7
IN
8
GND
9
U3 MCP1703
1
2
J2
CON2
1
2
J9
CON2
2
P1
Optional
2
P2
Optional
GND
A
B
Y
VDD
U4
NC7SZ08L6X C9
0.1µF, 25V
R19 Zero
R20 Zero
R23 Zero
R24 Zero
C22
C23
C21
U2
LM5113TM
C19
0.F, 25V
C17
100pF
C16
100pF
D3
Optional
Q1
EPC2029
Q2
EPC2029
C24
1µF, 100V

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