EM6K34 Datasheet by Rohm Semiconductor

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ROHm Data Sheet sélmrnNuHrni» Dimensions Ems Inner circuit Packaging specifications Thermal resislance
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©2010 ROHM Co., Ltd. All rights reserved.
0.9V Drive Nch + Nch MOSFET
EM6K34
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(EMT6).
3)Ultra low voltage drive(0.9V drive).
Application
Switching
Inner circuit
Packaging specifications
Package Taping
Code T2R
Basic ordering unit (pieces) 8000
EM6K34
Absolute maximum ratings (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Limits Unit
Drain-source voltage VDSS 50 V
Gate-source voltage VGSS 8V
Continuous ID200 mA
Pulsed IDP 800 mA
Continuous Is125 mA
Pulsed Isp 800 mA
150 mW / TOTAL
120 mW / ELEMENT
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Thermal resistance
Symbol Limits Unit
833 C/ W /TOTAL
1042 C/ W /ELEMENT
* Each terminal mounted on a recommended land.
Type
Source current
(Body Diode)
Drain current
Parameter
Parameter
Channel to Ambient Rth (ch-a)
PD
Power dissipation
*
Abbreviated symbol : K34
*2
*1
*1
EMT6
(1) (2) (3)
(4)(5)(6)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
2
2
1
1
(1)
(6)
(3)
(4)
(2)
(5)
1/5 2010.11 - Rev.A
SOT-563
Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
EM6K34  
Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS --10 AV
GS=8V, VDS=0V
Drain-source breakdown voltage V (BR)DSS 50 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS --1AV
DS=50V, VGS=0V
Gate threshold voltage VGS (th) 0.3 - 0.8 V VDS=10V, ID=1mA
- 1.6 2.2 ID=200mA, VGS=4.5V
- 1.7 2.4 ID=200mA, VGS=2.5V
- 2.0 2.8 ID=200mA, VGS=1.5V
- 2.2 3.3 ID=100mA, VGS=1.2V
- 3.0 9.0 ID=10mA, VGS=0.9V
Forward transfer admittance l Yfs l 0.2 - - S ID=200mA, VDS=10V
Input capacitance Ciss - 26 - pF VDS=10V
Output capacitance Coss -6-pFV
GS=0V
Reverse transfer capacitance Crss - 3 - pF f=1MHz
Turn-on delay time td(on) -5-nsI
D=100mA, VDD 25V
Rise time tr-8-nsV
GS=4.5V
Turn-off delay time td(off) - 17 - ns RL=250
Fall time tf- 43 - ns RG=10
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Symbol Min. Typ. Max. Unit
Forward Voltage VSD - - 1.2 V Is=200mA, VGS=0V
*Pulsed
Conditions
Conditions
Parameter
Parameter
Static drain-source on-state
resistance RDS (on)
*
*
*
*
*
*
*
*
*
*
*
2/5 2010.11- Rev.A
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Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
EMK6K34
Electrical characteristics curves
100
1000
10000
0.001 0.01 0.1 1
VGS= 1.2V
Pulsed
100
1000
10000
0.001 0.01 0.1 1
VGS= 0.9V
Pulsed
0
0.05
0.1
0.15
0.2
0 0.2 0.4 0.6 0.8 1
Ta=25C
Pulsed
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.9V
VGS= 0.8V
VGS= 0.7V
0.001
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1
VDS= 10V
Pulsed
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
100
1000
10000
0.001 0.01 0.1 1
VGS= 0.9V
VGS= 1.2V
VGS= 1.5V
VGS= 2.5V
VGS= 4.5V
Ta= 25C
Pulsed
0
0.05
0.1
0.15
0.2
0246810
VGS= 0.7V
Ta=25C
Pulsed
VGS= 0.9V
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.8V
100
1000
10000
0.001 0.01 0.1 1
VGS= 2.5V
Pulsed
100
1000
10000
0.001 0.01 0.1 1
VGS= 4.5V
Pulsed
100
1000
10000
0.001 0.01 0.1 1
VGS= 1.5V
Pulsed
Fig.1 Typical Output Characteristics( ) Fig.2 Typical Output Characteristics( ) Fig.3 Typical Transfer Characteristics
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current()
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current()
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current()
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current()
DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS[V]
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current()
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current()
DRAIN-CURRENT : ID[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[m]
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
3/5 2010.11 - Rev.A
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Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
EM6K34  
0.01
0.1
1
0 0.5 1 1.5
VGS=0V
Pulsed
Ta= 125C
Ta= 75C
Ta= 25C
Ta= 25C
0.1
1
10
0.01 0.1 1
VDS= 10V
Pulsed
Ta=25C
Ta=25C
Ta=75C
Ta=125C
1
10
100
1000
0.01 0.1 1
t
f
td(on)
td(off)
Ta=25C
VDD=25V
VGS=4.5V
RG=10
tr
0
1
2
3
4
0 0.5 1 1.5
0
1000
2000
3000
4000
5000
012345678
Ta=25C
Pulsed
ID= 0.20A
ID= 0.01A
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.13 Switching Characteristics
DRAIN-CURRENT : ID[A]
1
10
100
1000
0.01 0.1 1 10 100
Ciss
Coss
Crss
Ta=25C
f=1MHz
VGS=0V
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : VDS[V]
CAPACITANCE : C [pF]
TOTAL GATE CHARGE : Qg [nC]
GATE-SOURCE VOLTAGE : VGS [V]
SWITCHING TIME : t [ns]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[m]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
SOURCE CURRENT : Is [A]
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.10 Forward Transfer Admittance
vs. Drain Current
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
DRAIN-CURRENT : ID[A]
Ta=25C
VDD=25V
ID= 0.2A
RG=10
Pulsed
4/5 2010.11- Rev.A
@WL H IL Liffil‘
Data Sheet
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©2010 ROHM Co., Ltd. All rights reserved.
EM6K34  
Measurement circuits
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
F
ig.1-1 Switching time measurement circu
it
VGS
RG
VD
S
D.U.T.
ID
RL
VDD
Fig.1-2 Switching waveforms
90%
90% 90
%
10% 10%
50%
10%
50%
V
GS
Pulse width
V
DS
ton toff
tr
td(on) tf
td(off)
5/5 2010.11- Rev.A
ROHm SEMICONDUCTOR
R1010
A
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© 2010 ROHM Co., Ltd. All rights reserved.
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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