BTA420Y-800CT Datasheet by WeEn Semiconductors

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#2 mm mm‘um Table 1. Quick reference data full sine wave E Fig. 2 Fig. 3 V9_? Ti(mil)_= 25 Fig. 4 Fig. 5
BTA420Y-800CT
3Q Hi-Com Triac
12 September 2018 Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally
insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high
dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated
junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where
"high junction operating temperature capability" is required.
2. Features and benefits
3Q technology for improved noise immunity
2500 V RMS isolation voltage capability
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
Less sensitive gate for high noise immunity
Internally insulated package
Internally isolated mounting base
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Applications subject to high temperature
Heating controls
High power motor control
High power switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-
state voltage
- - 800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 100 °C; Fig. 1;
Fig. 2; Fig. 3
- - 20 A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5
- - 200 AITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
- - 220 A
Tjjunction temperature - - 150 °C
BTA420Y-800CT Table 2. Plnnlng lnformatlon 4mm Table 3. Orderlng lnformatlon
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3Q Hi-Com Triac
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Product data sheet 12 September 2018 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
- - 35 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
- - 35 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
- - 35 mA
IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 40 mA
VTon-state voltage IT = 24 A; Tj = 25 °C; Fig. 10 - 1.2 1.5 V
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
1250 - - V/µs
VD = 400 V; Tj = 150 °C; IT(RMS) = 20 A;
dVcom/dt = 10 V/µs; gate open circuit
16 - - A/msdIcom/dt rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 20 A;
dVcom/dt = 1 V/µs; gate open circuit
38 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
1 2
mb
3
TO-220AB (SOT78D)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA420Y-800CT TO-220AB plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
SOT78D
BTA420Y-800CT Table 4. LI 9 values In accordance With the Absolute Maximum Rating System (IEC 60134). full sine wave Fig. 1 Fig, 2 Fig, 3 full sine wave Fig, 4 Fig, 5 asa-fl13fl79
WeEn Semiconductors BTA420Y-800CT
3Q Hi-Com Triac
BTA420Y-800CT All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 12 September 2018 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state
voltage
- 800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 100 °C; Fig. 1;
Fig. 2; Fig. 3
- 20 A
full sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 4; Fig. 5
- 200 AITSM non-repetitive peak on-
state current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 220 A
I2t I2t for fusing tp = 10 ms; sine-wave pulse - 200 A²s
dIT/dt rate of rise of on-state
current
IG = 70 mA - 100 A/µs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C
Tjjunction temperature - 150 °C
aaa-013157
0
5
10
15
20
25
-50 0 50 100 150
IT(RMS)
(A)
100 °C
Tmb (°C)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
aaa-013078
0
20
40
60
80
10-2 10-1 1 10
surge duration (s)
IT(RMS)
(A)
f = 50 Hz; Tmb = 100 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
WeEn Semiconductors BTA420Y-800CT
3Q Hi-Com Triac
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Product data sheet 12 September 2018 4 / 13
0 5
10 15 20 25
0
6
12
18
24
30
IT(RMS) (A)
conduction
angle
form
factor
α
30
60
90
120
180
2.816
1.976
1.570
1.329
1.110
α
120
90
60
30
α = 180°
°
°
°
°
Ptot
(W)
aaa-013079
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
003aak705
0
40
80
120
160
200
240
1 10 102103
number of cycles (n)
ITSM
(A)
I
TSM
t
I
T
T
j(init)
= 25 °C max
1/f
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA420Y-800CT 555 mm % in
WeEn Semiconductors BTA420Y-800CT
3Q Hi-Com Triac
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Product data sheet 12 September 2018 5 / 13
aaa-013080
10-5 10-1
10-2
10-4 10-3
103
102
104
10
(A)
tp(s)
I
TSM
t
I
T
T
j(init)
= 25 °C max
t
p
ITSM
(1)
tp ≤ 20 ms
(1) dIT/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values
BTA420Y-800CT Table 5. Thermal characteristics 5537012996 Table 6. Isolation characteristics
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3Q Hi-Com Triac
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Product data sheet 12 September 2018 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction to
mounting base
full cycle; Fig. 6 - - 1.9 K/W
Rth(j-a) thermal resistance
from junction to
ambient free air
in free air - 60 - K/W
10-4
tp (s)
1 1010-1
10-3 10-2
1
10-1
10
Zth(j-mb)
(K/W)
10-2
aaa-012996
tp
P
t
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
Visol(RMS) RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
Tmb = 25 °C
- - 2500 V
Cisol isolation capacitance from main terminal 2 to external
heatsink; f = 1 MHz; Tmb = 25 °C
- 10 - pF
BTA420Y-800CT Table 7. Characteristics IT=0. Fig. 7 IT=0. Fig. 7 IT=0. Fig. 7 IG=0 Fig.8 IG=0 Fig.8 IG=0 Fig.8
WeEn Semiconductors BTA420Y-800CT
3Q Hi-Com Triac
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Product data sheet 12 September 2018 7 / 13
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
- - 35 mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
- - 35 mA
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
- - 35 mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
- - 50 mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
- - 80 mA
ILlatching current
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
- - 50 mA
IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 40 mA
VTon-state voltage IT = 24 A; Tj = 25 °C; Fig. 10 - 1.2 1.5 V
VD = 12 V; Tj = 25 °C; Fig. 11 - 0.7 1 VVGT gate trigger voltage
VD = 400 V; Tj = 150 °C; Fig. 11 0.2 0.4 - V
IDoff-state current VD = 800 V; Tj = 150 °C - 0.2 1 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
1250 - - V/µs
VD = 400 V; Tj = 150 °C; IT(RMS) = 20 A;
dVcom/dt = 10 V/µs; gate open circuit
16 - - A/msdIcom/dt rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 20 A;
dVcom/dt = 1 V/µs; gate open circuit
38 - - A/ms
BTA420Y-800CT 35374712993 \ 2) 3) \ \ \\ \\ \\ 5537013083 ”5747134731 \ \ // \\\ /
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3Q Hi-Com Triac
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Product data sheet 12 September 2018 8 / 13
Tj (°C)
-50 1501000 50
1
2
3
0
(1)
(2)
(3)
IGT
IGT(25°C)
aaa-013082
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
Tj (°C)
-50 1501000 50
1
2
3
0
IL
IL(25°C)
aaa-012998
Fig. 8. Normalized latching current as a function of
junction temperature
Tj (°C)
-50 1501000 50
1
2
3
0
IH
IH(25°C)
aaa-013083
Fig. 9. Normalized holding current as a function of
junction temperature
VT (V)
0 321
20
10
30
40
IT
(A)
0
(1)
aaa-013081
(2)
(3)
Vo = 0.998 V; Rs = 0.020 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
BTA420Y-800CT
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3Q Hi-Com Triac
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Product data sheet 12 September 2018 9 / 13
0.8
1.2
1.6
0.4
Tj (°C)
-50 1501000 50
VGT
VGT(25°C)
aaa-013001
Fig. 11. Normalized gate trigger voltage as a function of junction temperature
BTA420Y-800CT Plastic single-ended package; isolated hea1sink mounted; 1 mounting hole: 3-Isad To-Zzo SOT7ED l_‘_‘_‘_‘_l_‘_‘_‘_‘_l scale D1 L1 ml rel a© 07—04—94
WeEn Semiconductors BTA420Y-800CT
3Q Hi-Com Triac
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Product data sheet 12 September 2018 10 / 13
11. Package outline
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT78D TO-220
SOT78D
07-04-04
07-07-10
UNIT A
mm 4.7
4.3
1.40
1.25
0.9
0.6
0.6
0.4
16.0
15.2 6.5 10.3
9.7 3.0 0.2
A1
DIMENSIONS (mm are the original dimensions)
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220
0 5 10 mm
scale
b c D D1
ref E e
2.54
L
14.0
12.8
L1
ref p
3.7
3.5
Q
2.6
2.2
q
3.0
2.7
wb2
1.72
1.32
b1
1.4
1.1
c
Q
A1
A
mounting
base
e e
wM
p
b
b2
b1
D1
L
D
L1
q
E
123
Fig. 12. Package outline TO-220AB (SOT78D)
hem sIgn. ata sheaf Is axplalnsd In same 5 omevIeeIs) assumed In ml; 5 comma": was published all he Imam pmud status lmnr hmgflMwwmaen-eemmom BTA420Y-800CT
WeEn Semiconductors BTA420Y-800CT
3Q Hi-Com Triac
BTA420Y-800CT All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 12 September 2018 11 / 13
12. Legal information
Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
WeEn Semiconductors and its customer, unless WeEn Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, WeEn Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability for
the consequences of use of such information. WeEn Semiconductors takes
no responsibility for the content in this document if provided by an information
source outside of WeEn Semiconductors.
In no event shall WeEn Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific WeEn Semiconductors product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
WeEn Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without WeEn Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
WeEn Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies WeEn Semiconductors for
any liability, damages or failed product claims resulting from customer
design and use of the product for automotive applications beyond WeEn
Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
BTA420Y-800CT
WeEn Semiconductors BTA420Y-800CT
3Q Hi-Com Triac
BTA420Y-800CT All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 12 September 2018 12 / 13
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
BTA420Y-800CT
WeEn Semiconductors BTA420Y-800CT
3Q Hi-Com Triac
BTA420Y-800CT All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet 12 September 2018 13 / 13
13. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Limiting values............................................................. 3
8. Thermal characteristics............................................... 6
9. Isolation characteristics...............................................6
10. Characteristics............................................................ 7
11. Package outline........................................................ 10
12. Legal information..................................................... 11
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
For more information, please visit: http://www.ween-semi.com
For sales office addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 12 September 2018

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