DN2470 Datasheet by Microchip Technology

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‘ MICRQICHIP DN2470
2015 Microchip Technology Inc. DS20005410A-page 1
DN2470
Features
High-input impedance
Low-input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
•Converters
Linear amplifiers
Constant current sources
Battery operated systems
• Telecom
Description
This low threshold, depletion-mode, normally-on, tran-
sistor utilizes an advanced vertical Diffusion Metal
Oxide Semiconductor (DMOS) structure and a well
proven silicon-gate manufacturing process. This com-
bination produces a device with the power-handling
capabilities of bipolar transistors, plus the high-input
impedance and positive-temperature coefficient inher-
ent in Metal-Oxide Semiconductor (MOS) devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced second-
ary breakdown.
Vertical DMOS Field-Effect Transistors (FETs) are ide-
ally suited to a wide range of switching and amplifying
applications where a very low threshold voltage, high
breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
N-Channel, Depletion-Mode, Vertical DMOS FET
DN2470
DS20005410A-page 2 2015 Microchip Technology Inc.
Package Type
TO-252 (D-PAK)
See Table 2-1 for pin information
GATE
SOURCE
DRAIN
Change in RD 0N VGS: 5.0V. ISD v65: 5.0V. ISD
2015 Microchip Technology Inc. DS20005410A-page 3
DN2470
1.0 ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Drain-to-source voltage................................................................................................................................................................ BVDSX
Drain-to-gate voltage....................................................................................................................................................................BVDGX
Gate-to-source voltage................................................................................................................................................................... ±20V
Operating and storage temperature............................................................................................................................. -55°C to +150°C
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC AND AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications TA =TJ = +25°C
Parameter Symbol Min Typ Max Units Conditions
DC Parameters (Note 1, unless otherwise stated)
Drain-to-source breakdown voltage BVDSX 700 V VGS = -5.0V, ID= 100µA
Gate-to-source off voltage VGS(OFF) -1.5 -3.5 V VDS = 25V, ID= 10µA
Change in VGS(OFF) with tempera-
ture VGS(OFF) -4.5 mV/°C VDS = 25V, ID= 10µA ((Note 2)
Gate body leakage current IGSS 100 nA VGS = ±20V, VDS= 0V
Drain-to-source leakage current ID(OFF)
––1.0µAV
DS = BVDSX, VGS = -10V
––1.0mA
VDS = 0.8 BVDSX,
VGS = -10V, TA= 125°C ((Note 2)
Saturated drain-to-source current IDSS –500- mAV
GS = 0V, VDS= 25V
Static drain-to-source on-state
resistance RDS(ON) ––42VGS = 0V, ID= 100mA
Change in RDS(ON) with temperature RDS(ON) ––1.1%/°CV
GS= 0V, ID= 100mA (Note 2)
AC Parameters (Note 2)
Forward transconductance GFS 100 mmho VDS= 10V, ID= 100mA
Input capacitance CISS – 540
pF VGS= -10V, VDS= 25V,
f = 1.0 MHz
Common source output capaci-
tance COSS ––60
Reverse transfer capacitance CRSS ––25
Turn-on delay time td(ON) ––30
ns
VDD= 25V,
ID= 100mA,
RGEN= 25,
Rise time tr––45
Turn-off delay time td(OFF) ––45
Fall time tf––60
Diode Parameters
Diode forward voltage drop VSD ––1.8VV
GS= -5.0V, ISD= 200mA (Note 1)
Reverse recovery time trr –800– nsV
GS= -5.0V, ISD= 200mA (Note 2)
DN2470
DS20005410A-page 4 2015 Microchip Technology Inc.
2.0 PIN DESCRIPTION
The locations of the pins are listed in Package Type.
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise specified, for all specifications TA =TJ = +25°C
Parameter Symbol Min Typ Max Units Conditions
Temperature Ranges
Operating and Storage temperature -55 150 °C
Package Thermal Resistances
Thermal Resistance, TO-252 (D-PAK) ja – 132 – °C/W
TABLE 1-1: THERMAL CHARACTERISTICS
Package
ID1
continuous
(mA)
1. ID continuous is limited by max rated Tj
ID
pulsed
(mA)
Power
Dissipation
@TA = 25°C (W)
IDR1
(mA)
IDRM
(mA)
TO-252 (D-PAK) 170 500 2.52
2. Mounted on FR4 board, 25mm x 25mm x 1.57 mm
170 500
TABLE 2-1: PIN DESCRIPTION
Pin # TO-252 Function
1GATE
3 SOURCE
2,4 DRAIN
_______
2015 Microchip Technology Inc. DS20005410A-page 5
DN2470
3.0 APPLICATION INFORMATION
Figure 3-1 shows the switching waveform and test cir-
cuit for DN2450.
FIGURE 3-1: Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
0V
VDD
R
GEN
0V
-10V
t
f
Product Summary
BVDSX/BVDGX
(V)
RDS(ON)
(max) ()
IDSS
(typ) (mA)
700 42 500
mation (D-PAK) ®Z NNN alor( )
DN2470
DS20005410A-page 6 2015 Microchip Technology Inc.
4.0 PACKAGING INFORMATION
4.1 Package Marking Information
Legend: XX...X Product Code or Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
3
e
3
e
TO-252 (D-PAK) Example
YYWWNNN
XXXXX
XXXX
e3
1517343
2470
DN
e3
3-Lead T0-252 (D-PAK) Package Outline (K4) E l L3 T D1 D i l l 1 2 LJ 3 LJ L; L5 NONI fir U "4 Ha 4 .. P Front View Rear View —\ Gaug- Pime A1 519:” .2 9T 1 n8 LL L. ‘ MN .036 .wa' .025 .010 .195 ms 215 .m .055 .035} an m mum mu MOM , , , r r , 24a , nan nan ma mu , {mm} use REF use w .m4 .m5 ms ms .215 ass 2:5 217' 265 mm .m mo .asa mu m" 15° JEDEC Rmrmnm T0252, vamon M, Issue E, June 2004 ' nus mmsnsm :5 no! specular: m ihs JEDEC mawmg 7‘ ms dimension Mm [mm the JEDEC mawmg Davina: nut to nah.
2015 Microchip Technology Inc. DS20005410A-page 7
DN2470
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
DN2470
DS20005410A-page 8 2015 Microchip Technology Inc.
APPENDIX A: REVISION HISTORY
Revision A (October 2015)
Updated file to new format. Released data sheet
in the Microchip system.
PART NO. v XX 44x 44x
2015 Microchip Technology Inc. DS20005410A-page 9
DN2470
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: DN2470 = N-Channel, Depletion-Mode,
vertical DMOS FET
Package: K4 = TO-252 (D-PAK)
Environmental G = Lead (Pb)-free/ROHS-compliant package
Media Type: (blank) = 2000/Reel
Examples:
a) DN2470K4-G TO-252 package,
2000/reel
PART NO. X
Device
X
Environmental
XX
Package
Options
Media
--
Type
YSTEM
DS20005410A-page 10 2015 Microchip Technology Inc.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
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OTHERWISE, RELATED TO THE INFORMATION,
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conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer,
LANCheck, MediaLB, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC,
SST, SST Logo, SuperFlash and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
The Embedded Control Solutions Company and mTouch are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo,
CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit
Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet,
KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, RightTouch logo, REAL ICE, SQI, Serial Quad I/O,
Total Endurance, TSHARC, USBCheck, VariSense,
ViewSpan, WiperLock, Wireless DNA, and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2015, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
ISBN: 978-1-63277-870-3
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
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Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
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allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
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are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
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QUALITYMANAGEMENTS
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DS20005410A-page 11 2015 Microchip Technology Inc.
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07/14/15

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