ZXMP6A13FQTA Datasheet by Diodes Incorporated

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ZXMP6A13FQ
Document Number DS36684 Rev. 2 - 2
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ZXMP6A13FQ
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS Max RDS(on) Max ID
T
A
= +25°C
-60V 400m @ VGS = -10V -1.1A
600m @ VGS = -4.5V -0.9A
Description
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Applications
DC - DC converters
Power management functions
Relay and solenoid driving
Motor control
Features
Fast switching speed
Low input capacitance
Low gate charge
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Available
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Notes 4 & 5)
Product Compliance Case Quantity per reel
ZXMP6A13FQTA Automotive SOT23 3,000 Units
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Top View Equivalent Circuit
7P6 = Product Type Marking Code
D
S
G
Top View
Pin Out
D
S
G
7P6
SOT23
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current VGS = 10V
(Note 7)
TA = +70°C (Note 7)
(Note 6)
ID
-1.1
-0.8
-0.9
A
Pulsed Drain Current (Note 8) IDM -4.0 A
Continuous Source Current (Body Diode) (Note 7) IS -1.2 A
Pulsed Source Current (Body Diode) (Note 8) ISM -4.0 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
Linear Derating Factor PD 625
5
mW
mW/°C
Power Dissipation (Note 7)
Linear Derating Factor PD 806
6.5
mW
mW/°C
Thermal Resistance, Junction to Ambient (Note 6) RθJA 200 °C/W
Thermal Resistance, Junction to Ambient (Note 7) RθJA 155 °C/W
Thermal Resistance, Junction to Leads (Note 9) RθJL 194 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
7. For a device surface mounted on FR4 PCB measured at t 5 secs.
8. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05 pulse width = 10μs - pulse current limited by maximum junction temperature.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
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Thermal Characteristics
110100
10m
100m
1
10
Single Pulse
Tamb=25°C
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-ID Drain Current (A)
-VDS Drain-Source Voltage (V)
0 20 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200 Tamb=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS -60 V ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current IDSS -0.5 μA VDS = -60V, VGS = 0V
Gate-Source Leakage IGSS ±100 nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS
(
th
)
-1.0 -3.0 V
ID = -250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 10) RDS (ON) 0.4 VGS = -10V, ID = -0.9A
0.6 VGS = -4.5V, ID = -0.8A
Forward Transconductance (Notes 10 and 12) gfs 1.8 S VDS = -15V, ID = -0.9A
Diode Forward Voltage (Note 10) VSD -0.85 -0.95 V
TJ = +25°C, IS = -0.8A, VGS = 0V
Reverse Recovery Time (Note 12) tr
r
21.1 ns TJ = +25°C, IF = -0.9A,
di/dt = 100A/μs
Reverse Recovery Charge (Note 12) Qr
r
19.3 nC
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance Ciss 219
pF VDS = -30V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss 25.7
Reverse Transfer Capacitance Crss 20.5
Turn-On Delay Time (Note 11) tD
(
on
)
1.6
ns VDD = -30V, ID = -1A,
RG 6.0 VGS = -10V
Turn-On Rise Time (Note 11) t
r
2.2
Turn-Off Delay Time (Note 11) tD
(
off
)
11.2
Turn-Off Fall Time (Note 11) tf 5.7
Total Gate Charge (Note 11) Qg 2.9 nC VDS = -30V, VGS = -4.5V,
ID = -0.9A
Total Gate Charge (Note 11) Q
g
5.9
nC VDS = -30V, VGS = -10V,
ID = -0.9A
Gate-Source Charge (Note 11) Q
s 0.74
Gate-Drain Charge (Note 11) Q
g
d 1.5
Notes: 10. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing
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Typical Characteristics
0.1 1 10
0.1
1
10
0.1 1 10
0.01
0.1
1
10
12345
0.1
1
-50 0 50 100 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1 1 10
1
0.4 0.6 0.8 1.0 1.2 1.4
0.01
0.1
1
10
10V
4.5V
3.5V
-VGS
2.5V
2V
3V
Output Characteristics
T = 2C
-VGS
-ID Drain Current (A)
-VDS Drain-Source Voltage (V)
5V 4.5V
3.5V
3V
2V
1.5V
10V
2.5V
Output Characteristics
T = 150°C
-ID Drain Current (A)
-VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
-VDS = 10V
T = 2C
T = 150°C
-ID Drain Current (A)
-VGS Gate-Source Voltage (V)
Normalised Curves v Temperature
RDS(on)
VGS = -10V
ID = -0.9A
VGS(th)
VGS = VDS
ID = -250uA
Normalised RDS(on) and VGS(th)
Tj Junction Temperature (°C)
1.5V
7V
5V
10V
3V
2V
4V
3.5V
2.5V
On-Resistance v Drain Current
T = 2C
-VGS
RDS(on) Drain-Source On-Resistance 
-ID Drain Current (A)
T = 150°C
T = 2C
Source-Drain Diode Forward Voltage
-VSD Source-Drain Voltage (V)
-ISD Reverse Drain Current (A)
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ZXMP6A13FQ
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Typical Characteristics - continued
0.1 1 10
0
100
200
300
CRSS
COSS
CISS
VGS = 0V
f = 1MHz
C Capacitance (pF)
-VDS - Drain - Source Voltage (V)
0123456
0
2
4
6
8
10
VDS = -30V
ID = -0.9A
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Q - Charge (nC)
-VGS Gate-Source Voltage (V)
Test Circuits
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
a
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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