BZD27 Series Datasheet by Vishay Semiconductor Diodes Division

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BZD27C Series
www.vishay.com Vishay Semiconductors
Rev. 1.9, 27-Apr-2020 1Document Number: 85153
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Zener Diodes with Surge Current Specification
LINKS TO ADDITIONAL RESOURCES
FEATURES
Sillicon planar Zener diodes
Low profile surface-mount package
Zener and surge current specification
Low leakage current
Excellent stability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Meets JESD 201 class 2 whisker test
ESD capability according to AEC-Q101:
human body model: > 8 kV
machine model: > 800 V
Wave and reflow solderable
AEC-Q101 qualified available
Base P/N-E3 - RoHS-compliant, and commercial grade
Base P/N-HE3 - RoHS-compliant, and AEC-Q101 qualified
Compatible to SOD-123W package case outline or
SOD-123F and SOD-123FL
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Notes
(1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick)
(2) TJ = 25 °C prior to surge
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
VZ range nom. 3.6 to 200 V
Test current IZT 5 to 100 mA
VBR 7 to 188 V
VWM 6.2 to 160 V
PPPM 150 W
TJ max. 175 °C
VZ specification Pulse current
Circuit configuration Single
Polarity Uni-directional
12
23018
eSMP® Series
SMF (DO-219AB)
23019
3
3
3
D
D
D
3
D
3D Models
Available
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZD27C Series
BZD27C3V6P-E3-08 to BZD27C200P-E3-08 3000 per 7" reel (8 mm tape) MOQ = 30K
BZD27C3V6P-HE3-08 to BZD27C200P-HE3-08
BZD27C3V6P-E3-18 to BZD27C200P-E3-18 10 000 per 13" reel (8 mm tape) MOQ = 50K
BZD27C3V6P-HE3-18 to BZD27C200P-HE3-18
PACKAGE
PACKAGE NAME WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
WHISKER TEST
ACC. JESD 201 SOLDERING CONDITIONS
SMF (DO-219AB) 15 mg UL 94 V-0 MSL level 1
(according J-STD-020) class 2 Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation TL = 105 °C Ptot 2300 mW
TA = 30 °C (1) Ptot 800 mW
Non repetitive peak surge power dissipation (2) 100 μs square pulse PZSM 300 W
10/1000 μs waveform PRSM 150 W
Junction to lead RthJL 30 K/W
Junction to ambient air Mounted on epoxy-glass PCB with
3 mm x 3 mm Cu pads ( 40 μm thick) RthJA 180 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg -65 to +175 °C
Operating temperature range Top -65 to +175 °C
VISHAY. an. DwodesAmencasalwshay.com DwodesAslaalwshayLam DwodesEurogeQH/wshay com www wshay,com/doc791000
BZD27C Series
www.vishay.com Vishay Semiconductors
Rev. 1.9, 27-Apr-2020 2Document Number: 85153
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
•Maximum V
F = 1.2 V, at IF = 0.2 A
Electrical characteristics when used as voltage regulator diodes
(1) Pulse test: tp 5 ms
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER MARKING
CODE
ZENER VOLTAGE
RANGE (1)
TEST
CURRENT
REVERSE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
VZ at IZT1 IZT1 IR at VRZZ at IZT1 αVZ at IZT1
VmA μA VΩ%/°C
MIN. NOM. MAX. MAX. TYP. MAX. MIN. MAX.
BZD27C3V6P D0 3.4 3.6 3.8 100 100 1 4 8 -0.14 -0.04
BZD27C3V9P D1 3.7 3.9 4.1 100 50 1 4 8 -0.14 -0.04
BZD27C4V3P D2 4 4.3 4.6 100 25 1 4 7 -0.12 -0.02
BZD27C4V7P D3 4.4 4.7 5 100 10 1 3 7 -0.1 0
BZD27C5V1P D4 4.8 5.1 5.4 100 5 1 3 6 -0.08 0.02
BZD27C5V6P D5 5.2 5.6 6 100 10 2 2 4 -0.04 0.04
BZD27C6V2P D6 5.8 6.2 6.6 100 5 2 2 3 -0.01 0.06
BZD27C6V8P D7 6.4 6.8 7.2 100 10 3 1 3 0 0.07
BZD27C7V5P D8 7 7.5 7.9 100 50 3 1 2 0 0.07
BZD27C8V2P D9 7.7 8.2 8.7 100 10 3 1 2 0.03 0.08
BZD27C9V1P E0 8.5 9.1 9.6 50 10 5 2 4 0.03 0.08
BZD27C10P E1 9.4 10 10.6 50 7 7.5 2 4 0.05 0.09
BZD27C11P E2 10.4 11 11.6 50 4 8.2 4 7 0.05 0.1
BZD27C12P E3 11.4 12 12.7 50 3 9.1 4 7 0.05 0.1
BZD27C13P E4 12.4 13 14.1 50 2 10 5 10 0.05 0.1
BZD27C15P E5 13.8 15 15.6 50 1 11 5 10 0.05 0.1
BZD27C16P E6 15.3 16 17.1 25 1 12 6 15 0.06 0.11
BZD27C18P E7 16.8 18 19.1 25 1 13 6 15 0.06 0.11
BZD27C20P E8 18.8 20 21.2 25 1 15 6 15 0.06 0.11
BZD27C22P E9 20.8 22 23.3 25 1 16 6 15 0.06 0.11
BZD27C24P F0 22.8 24 25.6 25 1 18 7 15 0.06 0.11
BZD27C27P F1 25.1 27 28.9 25 1 20 7 15 0.06 0.11
BZD27C30P F2 28 30 32 25 1 22 8 15 0.06 0.11
BZD27C33P F3 31 33 35 25 1 24 8 15 0.06 0.11
BZD27C36P F4 34 36 38 10 1 27 21 40 0.06 0.11
BZD27C39P F5 37 39 41 10 1 30 21 40 0.06 0.11
BZD27C43P F6 40 43 46 10 1 33 24 45 0.07 0.12
BZD27C47P F7 44 47 50 10 1 36 24 45 0.07 0.12
BZD27C51P F8 48 51 54 10 1 39 25 60 0.07 0.12
BZD27C56P F9 52 56 60 10 1 43 25 60 0.07 0.12
BZD27C62P G0 58 62 66 10 1 47 25 80 0.08 0.13
BZD27C68P G1 64 68 72 10 1 51 25 80 0.08 0.13
BZD27C75P G2 70 75 79 10 1 56 30 100 0.08 0.13
BZD27C82P G3 77 82 87 10 1 62 30 100 0.08 0.13
BZD27C91P G4 85 91 96 5 1 68 60 200 0.08 0.13
BZD27C100P G5 94 100 106 5 1 75 60 200 0.09 0.13
BZD27C110P G6 104 110 116 5 1 82 80 250 0.09 0.13
BZD27C120P G7 114 120 127 5 1 91 80 250 0.09 0.13
BZD27C130P G8 124 130 141 5 1 100 110 300 0.09 0.13
BZD27C150P G9 138 150 156 5 1 110 130 300 0.09 0.13
BZD27C160P H0 153 160 171 5 1 120 150 350 0.09 0.13
BZD27C180P H1 168 180 191 5 1 130 180 400 0.09 0.13
BZD27C200P H2 188 200 212 5 1 150 200 500 0.09 0.13
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BZD27C Series
www.vishay.com Vishay Semiconductors
Rev. 1.9, 27-Apr-2020 3Document Number: 85153
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
•Maximum V
F = 1.2 V, at IF = 0.2 A
Electrical characteristics when used as protection diodes
(1) Non-repetitive peak reverse current in accordance with “IEC 60-1, section 8” (10/1000 μs pulse); see fig. 4
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER MARKING
CODE
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE
CURRENT
CLAMPING
VOLTAGE
TEMPERATURE
COEFFICIENT
VZ at IZT1 IZT1 IR at VRVC at IRSM (1) αVZ at IZT1
VmA μA V V A %/C
MIN. NOM. MAX. MAX. MAX. MIN. MAX.
BZD27C7V5P D8 7 7.5 7.9 100 1500 6.2 11.3 13.3 0 0.07
BZD27C8V2P D9 7.7 8.2 8.7 100 1200 6.8 12.3 12.2 0.03 0.08
BZD27C9V1P E0 8.5 9.1 9.6 50 100 7.5 13.3 11.3 0.03 0.08
BZD27C10P E1 9.4 10 10.6 50 20 8.2 14.8 10.1 0.05 0.09
BZD27C11P E2 10.4 11 11.6 50 5 9.1 15.7 9.6 0.05 0.1
BZD27C12P E3 11.4 12 12.7 50 5 10 17 8.8 0.05 0.1
BZD27C13P E4 12.4 13 14.1 50 5 11 18.9 7.9 0.05 0.1
BZD27C15P E5 13.8 15 15.6 50 5 12 20.9 7.2 0.05 0.1
BZD27C16P E6 15.3 16 17.1 25 5 13 22.9 6.6 0.06 0.11
BZD27C18P E7 16.8 18 19.1 25 5 15 25.6 5.9 0.06 0.11
BZD27C20P E8 18.8 20 21.2 25 5 16 28.4 5.3 0.06 0.11
BZD27C22P E9 20.8 22 23.3 25 5 18 31 4.8 0.06 0.11
BZD27C24P F0 22.8 24 25.6 25 5 20 33.8 4.4 0.06 0.11
BZD27C27P F1 25.1 27 28.9 25 5 22 38.1 3.9 0.06 0.11
BZD27C30P F2 28 30 32 25 5 24 42.2 3.6 0.06 0.11
BZD27C33P F3 31 33 35 25 5 27 46.2 3.2 0.06 0.11
BZD27C36P F4 34 36 38 10 5 30 50.1 3 0.06 0.11
BZD27C39P F5 37 39 41 10 5 33 54.1 2.8 0.06 0.11
BZD27C43P F6 40 43 46 10 5 36 60.7 2.5 0.07 0.12
BZD27C47P F7 44 47 50 10 5 39 65.5 2.3 0.07 0.12
BZD27C51P F8 48 51 54 10 5 43 70.8 2.1 0.07 0.12
BZD27C56P F9 52 56 60 10 5 47 78.6 1.9 0.07 0.12
BZD27C62P G0 58 62 66 10 5 51 86.5 1.7 0.08 0.13
BZD27C68P G1 64 68 72 10 5 56 94.4 1.6 0.08 0.13
BZD27C75P G2 70 75 79 10 5 62 103.5 1.5 0.08 0.13
BZD27C82P G3 77 82 87 10 5 68 114 1.3 0.08 0.13
BZD27C91P G4 85 91 96 5 5 75 126 1.2 0.09 0.13
BZD27C100P G5 94 100 106 5 5 82 139 1.1 0.09 0.13
BZD27C110P G6 104 110 116 5 5 91 150 1 0.09 0.13
BZD27C120P G7 114 120 127 5 5 100 167 0.9 0.09 0.13
BZD27C130P G8 124 130 141 5 5 110 185 0.81 0.09 0.13
BZD27C150P G9 138 150 156 5 5 120 205 0.73 0.09 0.13
BZD27C160P H0 153 160 171 5 5 130 224 0.67 0.09 0.13
BZD27C180P H1 168 180 191 5 5 150 252 0.6 0.09 0.13
BZD27C200P H2 188 200 212 5 5 160 278 0.54 0.09 0.13
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BZD27C Series
www.vishay.com Vishay Semiconductors
Rev. 1.9, 27-Apr-2020 4Document Number: 85153
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Typical Diode Capacitance vs. Reverse Voltage
Fig. 3 - Power Dissipation vs. Ambient Temperature
Fig. 4 - Non-Repetitive Peak Reverse Current Pulse Definition
Fig. 5 - Typical Repetitive Peak Surge Power
Fig. 6 - Typical Thermal Impedance vs. Time
0.1
1
10
0.6 0.8 1.0 1.2 1.4 1.6
17411
IF - Forward Current (A)
VF - Forward Voltage (V)
Max. VF
Ty p. VF
10
100
1000
10 000
0 0.5 1.0 1.5 2.0 2.5 3.0
17412
CD - Typ. Junction Capacitance (pF)
VR - Reverse Voltage (V)
C5V1P C6V8P C12P
C27P C51P
C200P
C18P
0
1.0
0.5
1.5
2.5
2.0
3.0
0 25 50 75 100 125 150 175
22774
Ptot - Total Power Dissipation (W)
Tamb - Ambient Temperature (°C)
RthJL = 30K/W
RthJA = 180K/W
17415
t
I
RSM
(%)
100
90
50
10
t
1
t
1
= 10 µs
t
2
= 1000 µs
t
2
0
22987
2
4
6
8
10
12
14
PZSM Peak Surge Power (W)
0.001 0.01 0.1 1 10 100 1000
tp Pulse Width (s)
Typ. PZSM = f (tp)
P (RthJL)
P (RthJA)
Duty cycle D
Chart valid for T
J
= 175 °C; T
A
= 25 °C, and a duty
cycle of D = 0.5
D =
t
p
TT
t
p
P
ZSM
= T
J
max. - T
A
D x (R
th
- Z
th
(t
p
)) + Z
th
(t
p
)
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Zth Thermal Impedance (K/W)
tp Pulse Width (s)
RthJA 3 mm x 3 mm pad
RthJL
Typ. Zth = f (tp)
22988
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BZD27C Series
www.vishay.com Vishay Semiconductors
Rev. 1.9, 27-Apr-2020 5Document Number: 85153
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SMF (DO219-AB)
ORIENTATION IN CARRIER TAPE - SMF (DO219-AB)
Foot print recommendation:
Rev. 3 - Date: 13. March 2007
Document no.: S8-V-3915.01-001 (4)
1.3 (0.051) 1.3 (0.051)
2.9 (0.114)
1.4 (0.055)
2.9 (0.114)
2.7 (0.106)
3.9 (0.154)
3.5 (0.138)
0.85 (0.033)
0.35 (0.014)
1.2 (0.047)
0.8 (0.031)
1.9 (0.075)
1.7 (0.067)
1.08 (0.043)
0.88 (0.035)
0.25 (0.010)
0.1(0.003)
0.1 (0.004)
0 (0.000)
5
5
Created - Date: 15. February 2005
17247
Detail Z
enlarged
SMF
Top view
cathode
Unreeling direction
22670
Document no.: S8-V-3717.02-003 (4)
Created - Date: 09. Feb. 2010

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