DMP2047UCB4 Datasheet by Diodes Incorporated

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ms. ® DMP2047UCB4 UrWLBiOTOrA ESD PROTECTED TO 3w UVWLBI 01074 DW VM
DMP2047UCB4
Document number: DS36154 Rev. 6 - 2
1 of 6
www.diodes.com
May 2015
© Diodes Incorporated
DMP2047UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ. @ VGS = -4.5V, TA = +25°C)
VDSS
RDS(on)
Qg
Qgd
-20V
40mΩ
2.3nC
0.4nC
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Battery Management
Load Switch
Battery Protection
Features
LD-MOS Technology with the Lowest Figure of Merit:
RDS(on) = 40m to Minimize On-State Losses
Qg = 2.3nC for Ultra-Fast Switching
Vgs(th) = -0.8V typ. for a Low Turn-On Potential
CSP with Footprint 1.0mm × 1.0mm
Height = 0.62mm for Low Profile
ESD = 3kV HBM Protection of Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-WLB1010-4
Terminal Connections: See Diagram Below
Weight: 0.0018 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMP2047UCB4-7
U-WLB1010-4
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2012
2013
2014
2015
2016
2017
2018
Code
Z
A
B
C
D
E
F
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
U-WLB1010-4
Top View
Equivalent Circuit
ESD PROTECTED TO 3kV
DW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
U-WLB1010-4
ms DMP2047UCB4
DMP2047UCB4
Document number: DS36154 Rev. 6 - 2
2 of 6
www.diodes.com
May 2015
© Diodes Incorporated
DMP2047UCB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
-6
V
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-4.1
-3.2
A
Continuous Drain Current (Note 5) VGS = -2.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-3.6
-2.8
A
Pulsed Drain Current (Note 6)
IDM
16
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 7)
PD
1.0
W
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 7)
RθJA
127
°C/W
Thermal Resistance, Junction to Case @ TC = +25°C (Note 7)
RθJC
25.8
°C/W
Power Dissipation (Note 5)
PD
1.66
W
Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5)
RθJA
77
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-20
V
VGS = 0V, ID = -250μA
Gate-Source Breakdown Voltage
BVGSS
-6.0
V
VDS = 0V, IG = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-1
μA
VDS = -16V, VGS = 0V
Gate-Source Leakage
IGSS
-100
nA
VGS = -6V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
-0.4
-0.8
-1.2
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
40
47
mΩ
VGS = -4.5V, ID =-1A
53
60
VGS = -2.5V, ID = -1A
Forward Transfer Admittance
|Yfs|
3.7
S
VDS = -10V, ID = -1A
Diode Forward Voltage
VSD
-0.7
-1.0
V
VGS = 0V, IS = -1A
Reverse Recovery Charge
Qrr
3.07
nC
VDD= 10V, IF = 1A,
di/dt =100A/μs
Reverse Recovery Time
trr
13.14
ns
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
218
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
116
Reverse Transfer Capacitance
Crss
11
Total Gate Charge
Qg
2.3
nC
VGS = -4.5V, VDS = -10V,
ID = -1A
Gate-Source Charge
Qgs
0.2
Gate-Drain Charge
Qgd
0.4
Gate Charge at Vth
Qg(th)
0.2
Turn-On Delay Time
tD(on)
7.9
ns
VDS = -10V, VGS = -2.5V,
RG = 20Ω, ID = -1A
Turn-On Rise Time
tr
10.7
Turn-Off Delay Time
tD(off)
48
Turn-Off Fall Time
tf
38
Notes: 5. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
6. Repetitive rating, pulse width limited by junction temperature.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
ms DMP2047UCB4 \ /// / \
DMP2047UCB4
Document number: DS36154 Rev. 6 - 2
3 of 6
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DMP2047UCB4
0 1 2 3 4 5
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
-I , DRAIN CURRENT (A)
D
V = -1.2V
GS
V = -1.5V
GS
V = -1.8V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -3.0V
GS
V = -6.0V
GS
V = -1.0V
GS
0
2
4
6
8
10
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
-I , DRAIN CURRENT (A)
D
0 0.5 1 1.5 2 2.5 3
T = 150 C
A
T = 125 C
A
T = 85 C
A
T = 25 C
A
T = -55 C
A
V = -5.0V
DS
0.01
0.02
0.03
004
0.06
007
0.08
0.09
0 2 4 6 8 10
0.1
0.05
0
-I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = -2.5V
GS
V = -4.5V
GS
0 2 4 6 8 10
0.08
-I , DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
T = -55 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
T = 150 C
A
V = -4.5V
GS
0.075
0.07
0.065
0.06
0.055
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.5
0.7
1.1
1.3
1.5
0.9
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Figure 5 On-Resistance Variation with Temperature
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 5V
I = A
GS
D
-2.
-1
V = -4.5V
I = A
GS
D
-5
0.01
0.03
0.04
0.07
0.09
0.1
0.08
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(on)
0.06
0.05
0.02
V = -4.5V
I = A
GS
D
-5
V = 5V
I = A
GS
D
-2.
-1
ms DMP2047UCB4 ............ // / \\ a fig *
DMP2047UCB4
Document number: DS36154 Rev. 6 - 2
4 of 6
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May 2015
© Diodes Incorporated
DMP2047UCB4
0.2
0.4
0.6
0.8
1.0
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
-I = 1mA
D
-I = 250µA
D
0
2
4
6
8
0 0.3 0.6 0.9 1.2 1.5
10
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I , SOURCE CURRENT (A)
S
T = 25 C
A
T = -55 C
A
T = 85 C
A
T = 125 C
A
T = 150 C
A
1000
100
10
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
C , JUNCTION CAPACITANCE (pF)
T
0 2 4 6 8 10 12 14 16 18 20
Coss
Crss
f = 1MHz
Ciss
10000
1
10
1 2 3 4 5 6
1
0.1
-V , GATE-SOURCE VOLTAGE (V)
Figure 10 Typical Gate-Source Leakage Current vs. Voltage
GS
-I , LEAKAGE CURRENT (nA)
GSS
100
0.01
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
AT = -55°C
A
0
0.5
1
1.5
2
4
4.5
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
-V , GATE-SOURCE VOLTAGE (V)
GS
0 0.5 1 1.5 2 2.5
3
3.5
2.5
V = -10V
I = -1A
DS
D
100
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
-I , DRAIN CURRENT (A)
D
T = 150°C
T = 25°C
Single Pulse
DUT on 1*MRP board
V = -6V
J(max)
A
GS
R
Limited
DS(on)
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
10
0.1
0.01
1
DMP2047UCB4
DMP2047UCB4
Document number: DS36154 Rev. 6 - 2
5 of 6
www.diodes.com
May 2015
© Diodes Incorporated
DMP2047UCB4
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
0.001
r(t), TRANSIENT THERMAL RESISTANCE
0.01
0.1
1
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
R (t) = r(t) * R
R = 125°C/W
Duty Cycle, D = t1/ t2

JA JA
JA
U-WLB1010-4
Dim
Min
Max
Typ
D
0.95
1.05
1.00
E
0.95
1.05
1.00
A
0.62
A2
0.38
b
0.25
0.35
0.30
e
0.50
SD
0.25
SE
0.25
All Dimensions in mm
Dimensions
Value (in mm)
C
0.50
D
0.25
C
C
ØD
E
D
A2 A
SD
e
SE e
4X-Ø b
DMP2047UCB4
DMP2047UCB4
Document number: DS36154 Rev. 6 - 2
6 of 6
www.diodes.com
May 2015
© Diodes Incorporated
DMP2047UCB4
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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