AP3012 Series Datasheet by Diodes Incorporated

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1.5MHz STEP-UP DC-DC CONVERTER AP3012
1
May 2010 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Data Sheet
General Description
The AP3012 is a high power, constant frequency, cur-
rent mode PWM, inductor based, step-up (boost) con-
verter. The converter operates at high frequency
(1.5MHz) so that a small, low profile inductor can be
used.
The AP3012 has built-in overvoltage protection (OVP)
to allow the device goes into shutdown mode when the
output voltage exceeds the OVP threshold of 29V.
The AP3012 is available in standard SOT-23-5 pack-
age.
Features
·High Efficiency up to 81%
·Adjustable Output Voltage up to 29V
·Shutdown Current 1µA Typical
·1.5MHz Switching Frequency
·36V 500mA Rugged Integrated Bipolar Switch
·Built-in Soft-start to Reduce Inrush Current Dur-
ing Start-up
·On-chip Overvoltage Protection
·Uses Low ESR Ceramic Output Capacitor
·Uses Small Inductor
Applications
·LCD/OLED Display Bias Supply
·White LED Driver for LCD Display Backlights
·Cellular Phones
Figure 1. Package Type of AP3012
SOT-23-5
WITH Khrc>htߢ
1.5MHz STEP-UP DC-DC CONVERTER AP3012
2
May 2010 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Data Sheet
Figure 2. Pin Configuration of AP3012 (Top View)
Pin Description
Pin Number Pin Name Function
1SW
Switch Pin. Connect inductor/diode here. The output voltage can go up to 29V but should not
exceed this limit. If the voltage on this pin is higher than the overvoltage protection (OVP)
threshold, the device can go into shutdown mode. It can be restarted by a low to high pulse on
the SHDN pin, or by a power on reset on the VIN supply
2 GND Ground Pin. Connect directly to local ground plane
3 FB Feedback Pin. Internally compares to 1.25V. Connect R1 and R2 resistor divider here. Calcu-
late the Output Voltage according to the formula: VOUT=1.25V * (1+R1/R2)
4 SHDN
Shutdown Pin. Connect to 1.5V or higher to enable device (ON), 0.4V or lower to disable
device (OFF)
5V
IN Input Supply Pin. Must be locally bypassed
Pin Configuration
K Package
(SOT-23-5)
SW
FB
VIN
SHDN
GND
1
2
34
5
'11P
1.5MHz STEP-UP DC-DC CONVERTER AP3012
3
May 2010 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Data Sheet
Functional Block Diagram
Figure 3. Functional Block Diagram of AP3012
FB
SHDN
VIN
GND
SW
Q1
Σ
A2
A1
R
S
Q
1.5MHz
OSCILLATOR
RAMP
GENERATOR
VREF
SHUTDOWN
3
5
42
1
DRIVER
1.25V
OVP
SOFT
START
RC
CC
0.2
COMPARATOR
FE
1.5MHz STEP-UP DC-DC CONVERTER AP3012
4
May 2010 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Data Sheet
Ordering Information
Circuit Type
Package
K: SOT-23-5
E1: Lead Free
AP3012 -
TR: Tape and Reel
Package Temperature
Range
Part Number Marking ID Packing Type
Lead Free Green Lead Free Green
SOT-23-5 -40 to 85oCAP3012KTR-E1 AP3012KTR-G1 E6B G6B Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green package.
G1: Green
1.5MHz STEP-UP DC-DC CONVERTER AP3012
5
May 2010 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Data Sheet
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-
imum Ratings" for extended periods may affect device reliability.
Parameter Symbol Min Max Unit
Input Voltage VIN 2.6 16 V
Operating Temperature TOP -40 85 oC
Recommended Operating Conditions
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Input Voltage VIN 20 V
SW Voltage 38 V
FB Voltage 5V
SHDN Voltage 16 V
Thermal Resistance (Junction to Atmosphere, no Heat sink) RθJA 265 oC/W
Operating Junction Temperature 150 oC
Storage Temperature Range TSTG -65 to 150 oC
Lead Temperature (Soldering, 10sec) TLEAD 260 oC
ESD (Machine Model) 250 V
ESD (Human Body Model) 2000 V
1.5MHz STEP-UP DC-DC CONVERTER AP3012
6
May 2010 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Data Sheet
(VIN=3V, VSHDN=3V, TA=25oC, unless otherwise specified.)
Parameter Symbol Conditions Min Typ Max Unit
Minimum Operating Volt-
age
2.6 V
Maximum Operating Volt-
age
16 V
Feedback Voltage VFB VIN=5V, VOUT=24V, IOUT=30mA 1.17 1.25 1.33 V
FB Pin Bias Current VFB=1.25V 10 45 100 nA
Supply Current ICC VSHDN =VFB=VIN, No switching 2.5 3.5 mA
Supply Current IQVSHDN =0V, VFB=0V 0.1 1.0 µA
Switching Frequency f 1.1 1.5 1.9 MHz
Maximum Duty Cycle DMAX 85 90 %
Switching Current Limit Duty Cycle=80% 500 mA
Switch VCESAT VCESAT ISW=250mA 300 mV
Switch Leakage Current VSW=5V 0.01 5 µA
SHDN Voltage High (ON) VTH 1.5
V
SHDN Vo l t a g e L o w ( O F F ) V TL 0.4
SHDN Pin Bias Current 55 µA
OVP Voltage Threshold VOVP 29 V
Soft-Start Time 550 µS
Thermal Resistance
(Junction to Case)
θJC 69.57 oC/W
Electrical Characteristics
. __ . .-. . -. . ,-. ‘. 777 ,-.
7
May 2010 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Data Sheet
1.5MHz STEP-UP DC-DC CONVERTER AP3012
Typical Performance Characteristics
Figure 4. Quiescent Current vs. Input Voltage
Figure 5. SHDN Pin Bias Current
Figure 6. Switching Frequency Figure 7. Feedback Bias Current
0 4 8 12 16
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Quiescent Current (mA)
VIN (V)
-50oC
25oC
100oC
-50 -25 0 25 50 75 100
0.0
0.4
0.8
1.2
1.6
2.0
Switching Frequency (MHz)
Junction Temperature (oC)
-50 -25 0 25 50 75 100
0
10
20
30
40
50
60
70
Feedback Bias Current (nA)
Junction Temperature (oC)
-50 -25 0 25 50 75 100
40
80
120
160
200
240
280
320
SHDN Pin Bias Current (µA)
Junction Temperature (oC)
SHDN=10V
SHDN=3.6V
SHDN=3V
SHDN=2.7V
vs. Junction Temperature
vs. Junction Temperature vs. Junction Temperature
1.5MHz STEP-UP DC-DC CONVERTER AP3012
8
May 2010 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Data Sheet
Figure 9. Switching Current Limit vs. Duty Cycle
Typical Performance Characteristics (Continued)
Figure 10. Feedback Voltage vs. Junction Temperature Figure 11. Efficiency vs. Output Current
Figure 8. Efficiency vs. Junction Temperature
0 5 10 15 20 25 30 35 40 45
60
65
70
75
80
85
Efficiency (%)
Output Current (mA)
VIN=3.0V
VIN=3.6V
VIN=4.2V
VIN=5.0V
VOUT=24V
L=10µH
-50 -25 0 25 50 75 100
1.24
1.25
1.26
1.27
1.28
1.29
VIN=5V
VOUT=24V
IOUT=30mA
Feedback Voltage (V)
Junction Temperature (oC)
020406080100
0
200
400
600
800
1000
1200
Switching Current Limit (mA)
Duty Cycle (%)
-50 -25 0 25 50 75 100
50
55
60
65
70
75
80
85
VIN=5V
VOUT=24V
IOUT=30mA
Efficiency (%)
Junction Temperature (oC)
9
May 2010 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Data Sheet
1.5MHz STEP-UP DC-DC CONVERTER AP3012
Typical Application
Figure 12. LCD/OLED Display Bias Driver Typical Circuit
Note: VOUT=1.25*(1+R1/R2)=1.25*19.2=24V
VIN SW
SHDN AP3012 FB
GND
VIN L1
10µΗ
5V
OFF ON
C1
1µF
C2
1µF
D1
1N5819
R2
5.1K
R1
92.82K
RLOAD
VOUT
24V
C: X5R or X7R Dielectric
L: SUMIDA CDTH3D14/HPNP-100NC or Equivalent
Data Sheet LSMHZ STEP-UP DC-DC C Unit: mm(inch) SOT-23-5 < 2.820(0="" 111)="" a="" a="" a="" a="" g="" 8="" f="" 7="" 7="" 9="" 9="" o="" 8="" 8="" to="" r="" n="" ‘="" §="" _="" __="" _l="" 0.950(0.037)="" »="" ‘="" ’="" ‘="" ~4="" *="" a="" y="" may="" 2010="" rev.="" 1.="" 6="" bcd="" semiconductor="" manufucmring="" limhcd="" 10="">
1.5MHz STEP-UP DC-DC CONVERTER AP3012
10
May 2010 Rev. 1. 6 BCD Semiconductor Manufacturing Limited
Data Sheet
SOT-23-5 Unit: mm(inch)
Mechanical Dimensions
2.820(0.111)
2.650(0.104)
1.500(0.059)
0.000(0.000)
0.300(0.012)
0.950(0.037)
0.900(0.035)
0.100(0.004)
0.200(0.008)
0.300(0.012)
8°
0°
3.020(0.119)
1.700(0.067)
2.950(0.116)
0.400(0.016)
0.150(0.006)
1.300(0.051)
0.200(0.008)
0.600(0.024)
1.800(0.071)
2.000(0.079)
0.700(0.028)
REF
TYP
1.450(0.057)
MAX
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BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
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BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
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No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
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