PMCXB900UE Datasheet by Nexperia USA Inc.

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PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
30 June 2015 Product data sheet
1. General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a
leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Very low threshold voltage for portable applications: VGS(th) = 0.7 V
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
3. Applications
Relay driver
High-speed line driver
Level shifter
Power management in battery-driven portables
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
TR1 (N-channel), Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 600 mA; Tj = 25 °C - 470 620
TR2 (P-channel), Static characteristics
RDSon drain-source on-state
resistance
VGS = -4.5 V; ID = -500 mA; Tj = 25 °C - 1.02 1.4 Ω
TR1 (N-channel)
VDS drain-source voltage Tj = 25 °C - - 20 V
IDdrain current VGS = 4.5 V; Tamb = 25 °C [1] - - 600 mA
TR2 (P-channel)
VDS drain-source voltage Tj = 25 °C - - -20 V
IDdrain current VGS = -4.5 V; Tamb = 25 °C [1] - - -500 mA
PMCXBQOOUE :I’_E 3 I: 3 I: Transparem top View 017mm 5 mm"; av 20w mm; mmfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 2 / 20
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S1 source TR1
2 G1 gate TR1
3 D2 drain TR2
4 S2 source TR2
5 G2 gate TR2
6 D1 drain TR1
7 D1 drain TR1
8 D2 drain TR2
Transparent top view
1 6
7
8
2
3
5
4
DFN1010B-6 (SOT1216)
017aaa262
D1
S1
G1
D2
S2
G2
5. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMCXB900UE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals
SOT1216
6. Marking
Table 4. Marking codes
Type number Marking code
PMCXB900UE 10 00 00
MARKING CODE
(EXAMPLE)
PIN 1
INDICATION MARK
YEAR DATE
CODE
READING
DIRECTION
READING EXAMPLE:
11
01
10 aaa-007665
MARK-FREE AREA
Fig. 1. DFN1010B-6 (SOT1216) binary marking code description
PMCXB900UE .anmn "mum.”
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 3 / 20
7. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
TR1 (N-channel)
VDS drain-source voltage - 20 V
VGS gate-source voltage
Tj = 25 °C
-8 8 V
VGS = 4.5 V; Tamb = 25 °C [1] - 600 mAIDdrain current
VGS = 4.5 V; Tamb = 100 °C [1] - 400 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 2.5 A
[2] - 265 mWTamb = 25 °C
[1] - 380 mW
Ptot total power dissipation
Tsp = 25 °C - 4025 mW
TR1 (N-channel), Source-drain diode
ISsource current Tamb = 25 °C [1] - 400 mA
TR2 (P-channel)
VDS drain-source voltage - -20 V
VGS gate-source voltage
Tj = 25 °C
-8 8 V
VGS = -4.5 V; Tamb = 25 °C [1] - -500 mAIDdrain current
VGS = -4.5 V; Tamb = 100 °C [1] - -300 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -2 A
[2] - 265 mWTamb = 25 °C
[1] - 380 mW
Ptot total power dissipation
Tsp = 25 °C - 4025 mW
TR2 (P-channel), Source-drain diode
ISsource current Tamb = 25 °C [1] - -350 mA
Per device
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PMCXB900UE 017355122 017553124 5557093997 us .mpmav 200 NM h'ivesqrwfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 4 / 20
Tj(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
Pder
(%)
0
Fig. 2. MOSFET transistor: Normalized total
power dissipation as a function of junction
temperature
Tj(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
Ider
(%)
0
Fig. 3. MOSFET transistor: Normalized continuous
drain current as a function of junction
temperature
aaa-008997
VDS (V)
10-1 102
101
1
10-1
10
ID
(A)
10-2
tp = 10 µs
tp = 100 µs
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
tp = 1 ms
tp = 10 ms
tp = 100 ms
Limit RDSon = VDS/ID
IDM = single pulse
Fig. 4. TR1 (N-channel): safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
PMCXB900UE DC‘ T5,, : 25 ‘70 (2 Tan“, : 25 °c, am mounung pad 1 cm? 5537005901 us :leplnaEV my Mum: 15mg
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 5 / 20
aaa-006901
VDS (V)
-10-1 -102
-10-1
-1
-10-1
-10
ID
(A)
-10-2
100 µs
1 ms
10 ms
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 1 cm2
Limit RDSon = VDS/IDtp =
10 µs
100 ms
IDM = single pulse
Fig. 5. TR2 (P-channel): safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
8. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
TR1 (N-channel)
[1] - 410 475 K/WRth(j-a) thermal resistance
from junction to
ambient
in free air
[2] - 285 330 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
- 27 31 K/W
TR2 (P-channel)
[1] - 410 475 K/WRth(j-a) thermal resistance
from junction to
ambient
in free air
[2] - 285 330 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
- 27 31 K/W
[1] Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
PMCXB900UE 5557095992 5557095993 .mpmav 200 NM h'ivesqmfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 6 / 20
aaa-006902
tp (s)
10-3 102103
10110-2 10-1
102
103
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1
0.05
0.02
00.01
FR4 PCB, standard footprint
Fig. 6. TR1 and TR2: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
aaa-006903
tp (s)
10-3 102103
10110-2 10-1
102
103
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1
0.05
0.02
00.01
FR4 PCB, mounting pad for drain 1 cm2
Fig. 7. TR1 and TR2: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PMCXB900UE .anmn "mum.”
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 7 / 20
9. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
TR1 (N-channel), Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V
VGSth gate-source threshold
voltage
ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 0.95 V
IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA
IGSS gate leakage current
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA
VGS = 4.5 V; ID = 600 mA; Tj = 25 °C - 470 620
VGS = 4.5 V; ID = 600 mA; Tj = 150 °C - 760 1000
VGS = 2.5 V; ID = 500 mA; Tj = 25 °C - 620 850
VGS = 1.8 V; ID = 100 mA; Tj = 25 °C - 845 1300
VGS = 1.5 V; ID = 10 mA; Tj = 25 °C - 1125 3000
RDSon drain-source on-state
resistance
VGS = 1.2 V; ID = 1 mA; Tj = 25 °C - 2210 -
gfs transfer conductance VDS = 5 V; ID = 600 mA; Tj = 25 °C - 1 - S
TR1 (N-channel), Dynamic characteristics
QG(tot) total gate charge - 0.4 0.7 nC
QGS gate-source charge - 0.1 - nC
QGD gate-drain charge
VDS = 10 V; ID = 600 mA; VGS = 4.5 V;
Tj = 25 °C
- 0.1 - nC
Ciss input capacitance - 21.3 - pF
Coss output capacitance - 5.4 - pF
Crss reverse transfer
capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
- 4.2 - pF
td(on) turn-on delay time - 5.6 - ns
trrise time - 9.2 - ns
td(off) turn-off delay time - 19 - ns
tffall time
VDS = 10 V; ID = 600 mA; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
- 51 - ns
TR1 (N-channel), Source-drain diode characteristics
VSD source-drain voltage IS = 360 mA; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V
PMCXB900UE .anmn "mum.”
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 8 / 20
Symbol Parameter Conditions Min Typ Max Unit
TR2 (P-channel), Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V
VGSth gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V
IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA
IGSS gate leakage current
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA
VGS = -4.5 V; ID = -500 mA; Tj = 25 °C - 1.02 1.4 Ω
VGS = -4.5 V; ID = -500 mA; Tj = 150 °C - 1.54 2.1 Ω
VGS = -2.5 V; ID = -200 mA; Tj = 25 °C - 1.27 2.2 Ω
VGS = -1.8 V; ID = -40 mA; Tj = 25 °C - 1.7 3.3 Ω
VGS = -1.5 V; ID = -10 mA; Tj = 25 °C - 2.3 5 Ω
RDSon drain-source on-state
resistance
VGS = -1.2 V; ID = -1 mA; Tj = 25 °C - 3.5 - Ω
gfs transfer conductance VDS = -10 V; ID = -500 mA; Tj = 25 °C - 480 - mS
TR2 (P-channel), Dynamic characteristics
QG(tot) total gate charge - 1.19 2.1 nC
QGS gate-source charge - 0.17 - nC
QGD gate-drain charge
VDS = -10 V; ID = -450 mA;
VGS = -4.5 V; Tj = 25 °C
- 0.1 - nC
Ciss input capacitance - 43 - pF
Coss output capacitance - 14 - pF
Crss reverse transfer
capacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
- 8 - pF
td(on) turn-on delay time - 2.3 - ns
trrise time - 5 - ns
td(off) turn-off delay time - 13.5 - ns
tffall time
VDS = -10 V; ID = -450 mA;
VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C
- 6 - ns
TR2 (P-channel), Source-drain diode characteristics
VSD source-drain voltage IS = -115 mA; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V
PMCXB900UE 5337905993 3557093999 us 5557009000 gamma: \\_ D as .leplnaEV zen NM h'ivesqrwfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 9 / 20
VDS (V)
0 431 2
aaa-008998
1.0
1.5
0.5
2.0
2.5
ID
(A)
0
4.5 V
2.5 V
1.8 V
VGS = 1.2 V
1.5 V
Tj = 25 °C
Fig. 8. TR1: output characteristics; drain current as a
function of drain-source voltage; typical values
aaa-008999
VGS (V)
0 1.51.00.5
10-4
10-5
10-3
ID
(A)
10-6
min typ max
Tj = 25 °C; VDS = 5 V
Fig. 9. TR1: sub-threshold drain current as a function
of gate-source voltage
ID (A)
0 2.52.01.0 1.50.5
aaa-009000
1
2
3
RDSon
(Ω)
0
VGS = 4.5 V
1.2 V
1.5 V
1.8 V
2 V
2.5 V
3 V
Tj = 25 °C
Fig. 10. TR1: drain-source on-state resistance as a
function of drain current; typical values
VGS (V)
0 542 31
aaa-009001
1
2
3
RDSon
(Ω)
0
Tj= 150 °C
Tj= 25 °C
ID = 0.6 A
Fig. 11. TR1: drain-source on-state resistance as a
function of gate-source voltage; typical values
PMCXB900UE 5557009002 as 5557009004 / / / / // // 5557099003 7 R0701) “ 7 Rosmxzm 5557099005 as .mpmav 200 NM h'ivesqrwfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 10 / 20
VGS (V)
0 542 31
aaa-009002
1.0
1.5
0.5
2.0
2.5
ID
(A)
0
Tj= 150 °C Tj= 25 °C
VDS > ID × RDSon
Fig. 12. TR1: transfer characteristics; drain current as a
function of gate-source voltage; typical values
Tj (°C)
-60 1801200 60
aaa-009003
1.0
0.5
1.5
2.0
a
0
Fig. 13. TR1: normalized drain-source on-state
resistance as a function of junction
temperature; typical values
Tj (°C)
-60 1801200 60
aaa-009004
0.5
1.0
1.5
VGS(th)
(V)
0
min
typ
max
ID = 0.25 mA; VDS = VGS
Fig. 14. TR1: gate-source threshold voltage as a
function of junction temperature
aaa-009005
VDS (V)
10-1 102
101
10
102
C
(pF)
1
Ciss
Coss
Crss
f = 1 MHz; VGS = 0 V
Fig. 15. TR1: input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
PMCXB900UE 5357009006 s‘ QG 917555137 5337909907 3557096994 so as .leplnaEV zen N‘V‘gh'iveslmfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 11 / 20
QG (nC)
0 0.50.40.2 0.30.1
aaa-009006
2
3
1
4
5
VGS
(V)
0
ID = 0.6 A; VDS = 10 V; Tamb = 25 °C
Fig. 16. TR1: gate-source voltage as a function of gate
charge; typical values
017aaa137
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 17. Gate charge waveform definitions
VSD (V)
0 2.01.60.8 1.20.4
aaa-009007
1.0
1.5
0.5
2.0
2.5
IS
(A)
0
Tj= 150 °C Tj= 25 °C
VGS = 0 V
Fig. 18. TR1: source current as a function of source-
drain voltage; typical values
VDS (V)
0 -4-3-1 -2
aaa-006904
-1.0
-0.5
-1.5
-2.0
ID
(A)
0.0
VGS = -4.5 V
-3.5 V
-3 V
-2.5 V
-1.8 V
-1.2 V
Tj = 25 °C
Fig. 19. TR2: output characteristics; drain current as a
function of drain-source voltage; typical values
PMCXB900UE
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 12 / 20
aaa-006905
VGS (V)
0.0 -1.5-1.0-0.5
-10-5
-10-4
-10-3
-10-2
ID
(A)
-10-6
min typ max
Tj = 25 °C; VDS = -5 V
Fig. 20. TR2: sub-threshold drain current as a function
of gate-source voltage
ID (V)
0.0 -2.0-1.5-0.5 -1.0
aaa-006906
1.0
0.5
1.5
2.0
RDSon
(Ω)
0.0
VGS = -4.5 V
-3.5 V
-3 V
-2.5 V-1.8 V -2.2 V
Tj = 25 °C
Fig. 21. TR2: drain-source on-state resistance as a
function of drain current; typical values
VGS (V)
0 -5-4-2 -3-1
aaa-006907
2
3
1
4
5
RDSon
(Ω)
0
Tj= 150 °C
Tj= 25 °C
ID = -0.5 A
Fig. 22. TR2: drain-source on-state resistance as a
function of gate-source voltage; typical values
VGS (V)
0 -4-3-1 -2
aaa-006908
-0.50
-0.25
-0.75
-1.00
ID
(A)
0.00
Tj= 150 °CTj= 25 °C
VDS > ID × RDSon
Fig. 23. TR2: transfer characteristics; drain current as a
function of gate-source voltage; typical values
PMCXB900UE 5557006909 35574796910 \ \\ \1\ \ \ \ \ \ \ \ TA Ty Run»; a : 7 Romum 5357006911 53370475912 us a .mpmav 200 NM h'ivesqrwfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 13 / 20
Tj (°C)
-60 1801200 60
aaa-006909
1.00
0.75
1.25
1.50
a
0.50
Fig. 24. TR2: normalized drain-source on-state
resistance as a function of junction
temperature; typical values
Tj (°C)
-60 1801200 60
aaa-006910
-0.5
-1.0
-1.5
VGS(th)
(V)
0.0
min
typ
max
ID = -0.25 mA; VDS = VGS
Fig. 25. TR2: gate-source threshold voltage as a
function of junction temperature
aaa-006911
VDS (V)
-10-1 -102
-10-1
10
102
C
(pF)
1
Ciss
Coss
Crss
f = 1 MHz; VGS = 0 V
Fig. 26. TR2: input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
aaa-006912
QG (nC)
0 0.60.40.2
-2
-3
-1
-4
-5
VGS
(V)
0
ID = -0.45 A; VDS = -10 V; Tamb = 25 °C
Fig. 27. TR2: gate-source voltage as a function of gate
charge; typical values
PMCXB900UE 51 017335137 ass-006913 su
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 14 / 20
017aaa137
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 28. MOSFET transistor: Gate charge waveform
definitions
VSD (V)
0.0 -2.0-1.5-0.5 -1.0
aaa-006913
-1.0
-0.5
-1.5
-2.0
IS
(A)
0.0
Tj= 150 °C Tj= 25 °C
VGS = 0 V
Fig. 29. TR2: source current as a function of source-
drain voltage; typical values
10. Test information
Fig. 30. Duty cycle definition
PMCXB900UE ‘rriH -- I WM: mmfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 15 / 20
11. Package outline
5
32
13-03-05Dimensions in mm
0.34
0.40
0.04
max
0.95
1.05
0.22
0.30
0.125
0.205
1.05
1.15
0.275 0.275
0.32
0.40
0.35 0.35
1
6 4
0.15
0.23
Fig. 31. Package outline DFN1010B-6 (SOT1216)
PMCXB900UE SOT1Z1S Footprint iniormation for renow soldering ofDFN1u1oE-6 package
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 16 / 20
12. Soldering
SOT1216Footprint information for reflow soldering of DFN1010B-6 package
sot1216_fr
solder land
solder resist
solder land plus solder paste
occupied area
Dimensions in mm
Issue date 13-03-06
14-07-28
0.3 (6x)
1.10.6
0.25
0.35
0.35
0.51.21.3
0.25
1
1.35
0.35
0.15 0.150.2 (6x)
0.35
0.9
Fig. 32. Reflow soldering footprint for DFN1010B-6 (SOT1216)
PMCXB900UE nmuavmw unmumm
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 17 / 20
13. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMCXB900UE v.2 20150630 Product data sheet - PMCXB900UE v.1
Modification: Change of binary marking code position.
PMCXB900UE v.1 20131007 Product data sheet - -
cl he m sign. ala sneer is explained in s o: device‘s) described 5 document was publis he Islesl pmduct stat mgr/wwwnexgna PMCXBQOOUE ms Mcummerclal sale 7 Nexpsr meet to me general terms and can My llwww nexg a cam/Emf all a Mum-u Ev 2m mm mmfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 18 / 20
14. Legal information
14.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
14.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
14.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
PMCXB900UE nurw-mavznw "mum"...
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 19 / 20
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
14.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
PMCXB900UE n m... av mm mm mm
© Nexperia B.V. 2017. All rights reserved
Nexperia PMCXB900UE
20 V, complementary N/P-channel Trench MOSFET
PMCXB900UE All information provided in this document is subject to legal disclaimers.
Product data sheet 30 June 2015 20 / 20
15. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Ordering information .............................................2
6 Marking ................................................................... 2
7 Limiting values .......................................................3
8 Thermal characteristics .........................................5
9 Characteristics .......................................................7
10 Test information ................................................... 14
11 Package outline ................................................... 15
12 Soldering .............................................................. 16
13 Revision history ................................................... 17
14 Legal information .................................................18
14.1 Data sheet status ............................................... 18
14.2 Definitions ...........................................................18
14.3 Disclaimers .........................................................18
14.4 Trademarks ........................................................ 19
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
30 June 2015

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