T1235T-8T Datasheet by STMicroelectronics

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A2
A1
G
TO-220AB
A1
G
A2
A2
Features
Medium current Triac
High static and dynamic commutation
Three quadrants
ECOPACK2 compliant
Applications
General purpose AC line load switching
Motor control circuits
Small home appliances
• Lighting
Inrush current limiting circuits
Overvoltage crowbar protection
Description
Available in through-hole package, the T1235T-8T Triac can be used for the on/off or
phase angle control function in general purpose AC switching where high
commutation capability is required.
This device can be used without a snubber circuit when the limits defined in this
datasheet are respected.
Product status link
T1235T-8T
Product summary
Order code T1235T-8T
Package TO-220AB
IT(RMS) 12 A
VDRM/VRRM 800 V
VDSM/VRSM 900 V
IGT 35 mA
12 A 800 V Snubberless Triac in TO-220AB package
T1235T-8T
Datasheet
DS9635 - Rev 4 - September 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1Characteristics
Table 1. Absolute maximum ratings (limiting values)
Symbol Parameter Value Unit
IT(RMS) On-state RMS current (full sine wave) Tc = 131 °C 12 A
ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) F = 50 Hz t = 20 ms 90
A
F = 60 Hz t = 16.7 ms 95
I2tI2t value for fusing, (Tj initial = 25 °C) tp = 10 ms 54 A2s
VDRM/VRRM Repetitive surge peak off-state voltage
Tj = 150 °C 600
V
Tj = 125 °C 800
VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms 900 V
dl/dt Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns F = 100 Hz 100 A/µs
IGM Peak gate current tp = 20 µs Tj = 150 °C 4 A
PG(AV) Average gate power dissipation Tj = 150 °C 1 W
Tstg Storage junction temperature range -40 to +150 °C
TjOperating junction temperature range -40 to +150 °C
TLMaximum lead temperature soldering during 10 s 260 °C
Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol Test conditions Value Unit
IGT (1) VD = 12 V, RL = 30 Ω I - II - III
Min. 1.75
mA
Max. 35
VGT VD = 12 V, RL = 30 Ω I - II - III Max. 1.3 V
VGD VD = VDRM, RL = 3.3 kΩ , Tj = 150 °C I - II - III Min. 0.2 V
IHIT = 500 mA Max. 40 mA
ILIG = 1.2 x IGT
I - III
Max.
60
mA
II 65
dV/dt(2)
VD = 536 V, gate open Tj = 125 °C
Min.
2000
V/µs
VD = 402 V, gate open Tj = 150 °C 1000
(dI/dt)c(2) Without snubber (dV/dt)c > 20 V/μs
Tj = 125 °C
Min.
12
A/ms
Tj = 150 °C 6
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of A2 referenced to A1
T1235T-8T
Characteristics
DS9635 - Rev 4 page 2/11
Table 3. Static characteristics
Symbol Test conditions Value Unit
VT (1) ITM = 17 A, tp = 380 µs Tj = 25 °C Max. 1.55
V
VTO(1) Threshold voltage Tj = 150 °C Max. 0.85
Rd(1) Dynamic resistance Tj = 150 °C Max. 37 mΩ
IDRM, IRRM
VD = VR = 800 V
Tj = 25 °C
Max.
7.5 µA
Tj = 125 °C 1.0
mA
VD = VR = 600 V Tj = 150 °C Max. 2.7
1. For both polarities of A2 referenced to A1
Table 4. Thermal parameters
Symbol Parameter Value Unit
Rth(j-c) Junction to case (AC) 1.3 °C/W
Rth(j-a) Junction to ambient 60 °C/W
T1235T-8T
Characteristics
DS9635 - Rev 4 page 3/11
1.1 Characteristics curves
Figure 1. Maximum power dissipation versus on-state
RMS current (full cycle)
P(W)
0
2
4
6
8
10
12
14
16
0 2 4 6 12
180°
I (A)
T(RMS)
810
Figure 2. On-state RMS current versus case temperature
(full cycle)
I (A)
T(RMS)
0
2
4
6
8
10
12
14
0 25 5 0 7 5 100 125 150
T (°C)
C
Figure 3. On-state RMS current versus ambient
temperature (free air convection)
I (A)
T(RMS)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 2 5 50 75 100 125 150
T (°C)
a
Figure 4. Relative variation of thermal impedance versus
pulse duration
K = [Zth / Rth]
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04
Zth(j-c) Zth(j-a)
tp(s)
Figure 5. On-state characteristics (maximum values)
I (A)
TM
1
10
100
0.0 0 .5 1.0 1 .5 2.0 2 .5 3.0 3 .5 4.0
Tj=25 °C
Tj=150 °C V (V)
TM
T max:
j
V = 0.85 V
t0
R = 37 mΩ
d
Figure 6. Surge peak on-state current versus number of
cycles
I (A)
TSM
0
10
20
30
40
50
60
70
80
90
100
1 1 0 100 1000
Non repetitive
Tjinitial=25 °C
Non repetitive
Tjinitial=25 °C
Repetitive
TC=131 °C Number of cycles
One cycle
t = 20 ms
T1235T-8T
Characteristics (curves)
DS9635 - Rev 4 page 4/11
Figure 7. Non repetitive surge peak on-state current
I (A)
TSM
10
100
1000
0.01 0.10 1.00 10.00
sinusoidal pulse with width t <10 ms
pt ( ms)
p
ITSM
T initial = 25 °C
j
dl/dt limitation: 100 A / µs
Figure 8. Relative variation of gate trigger current and
gate voltage versus junction temperature (typical values)
I , V [ T ] / I , V [T = 25 °C]
GT GT j G T G T j
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 7 5 100 125 150
T (°C)
C
VGT
I Q1 - Q2
GT
I Q3
GT
Figure 9. Relative variation of static dV/dt immunity
versus junction temperature (typical values)
0
1
2
3
4
5
25 50 75 100 125 150
dV/dt [T j] / dV/dt [T j= 150 °C]
Tj(°C)
VD=VR= 402 V
Figure 10. Relative variation of holding current and
latching current versus junction temperature (typical
values)
I , I [ T ] / I , I [ T = 25 °C]
H L j H L j
0.0
0.5
1.0
1.5
2.0
-50 -25 0 2 5 50 7 5 100 125 150
IH
IL
T (°C)
j
Figure 11. Relative variation of critical rate of decrease of
main current (di/dt)c versus reapplied (dV/dt)c (typical
values)
(dI/dt)c [ ( dV/dt)c ] / S peci fied (dI/dt)c
0
1
2
3
4
0.1 1.0 10.0 100.0
(dV/dt)c (V/µs)
Figure 12. Relative variation of critical rate of decrease of
main current (di/dt)c versus junction temperature (typical
values)
(dl/dt)c [T ] / (dl/dt)c [T = 150 °C]
j j
0
1
2
3
4
5
6
7
8
9
25 50 75 100 125 150
T (°C)
j
T1235T-8T
Characteristics (curves)
DS9635 - Rev 4 page 5/11
Figure 13. Relative variation of leakage current versus junction temperature for VD = VDRM / VR = VRRM
blocking voltage (typical values)
I , I [ T; V , V ] / I , I
DRM RRM j DRM RRM DRM RRM
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125 150
[Tj=125 °C; 800 V]
[Tj=150 °C; 600 V]
T (°C)
j
V = V = 600 V
DRM RRM
V = V = 400 V
DRM RRM
V = V = 800 V
DRM RRM
T1235T-8T
Characteristics (curves)
DS9635 - Rev 4 page 6/11
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2Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
2.1 TO-220AB package information
Epoxy resin is halogen free and meets UL94 flammability standard, level V0
Lead-free plating package leads
Recommended torque: 0.4 to 0.6 N·m
Figure 14. TO-220AB package outline
T1235T-8T
Package information
DS9635 - Rev 4 page 7/11
Table 5. TO-220AB package mechanical data
Ref.
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.5984 0.6260
a1 3.75 0.1476
a2 13.00 14.00 0.5118 0.5512
B 10.00 10.40 0.3937 0.4094
b1 0.61 0.88 0.0240 0.0346
b2 1.23 1.32 0.0484 0.0520
C 4.40 4.60 0.1732 0.1811
c1 0.49 0.70 0.0193 0.0276
c2 2.40 2.72 0.0945 0.1071
e 2.40 2.70 0.0945 0.1063
F 6.20 6.60 0.2441 0.2598
I 3.73 3.88 0.1469 0.1528
L 2.65 2.95 0.1043 0.1161
I2 1.14 1.70 0.0449 0.0669
I3 1.14 1.70 0.0449 0.0669
I4 15.80 16.40 16.80 0.6220 0.6457 0.6614
M 2.6 0.1024
1. Inch dimensions are for reference only.
T1235T-8T
TO-220AB package information
DS9635 - Rev 4 page 8/11
Current Gate sensitivity Specific application T : Increased (dl/dt) and dV/dt producing reduced | DRM RRM 8 = 800 V Package T : TO-220AB
3Ordering information
Figure 15. Ordering information scheme
Triac
Current
12 = 12 A
Gate sensitivity
35 = 35 mA
Specific application
T = Increased (dl/dt)c and dV/dt producing reduced ITSM
Voltage (VDRM, VRRM)
8 = 800 V
Package
T = TO-220AB
T 12 35 T - 8 T
Table 6. Ordering information
Order code Marking Package Weight Base qty. Delivery mode
T1235T-8T T1235T-8T TO-220AB 2.0 g 50 Tube
T1235T-8T
Ordering information
DS9635 - Rev 4 page 9/11
Revision history
Table 7. Document revision history
Date Revision Changes
05-Aug-2013 1 Initial release.
01-Jul-2014 2 Updated Table 2.
28-Jul-2014 3 Updated Table 5.
13-Sep-2019 4 Updated Figure 14 and Table 5.
T1235T-8T
DS9635 - Rev 4 page 10/11
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© 2019 STMicroelectronics – All rights reserved
T1235T-8T
DS9635 - Rev 4 page 11/11

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