VEMT2023SLX01 Datasheet by Vishay Semiconductor Opto Division

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VEMT2023SLX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Apr-13 1Document Number: 84166
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
VEMT2023SLX01 is a silicon NPN epitaxial planar
phototransistor in a miniature side looking, surface mount
package (SMD) with dome lens and daylight blocking filter.
Filter bandwidth is matched with 830 nm to 950 nm IR
emitters.
FEATURES
Package type: surface mount
Package form: side view
Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3
AEC-Q101 qualified
High radiant sensitivity
Daylight blocking filter matched with 830 nm
to 950 nm IR emitters
Fast response times
Angle of half sensitivity: = ± 35°
Package matched with IR emitter series
VSMB2943SLX01
Floor life: 4 weeks, MSL 2a, acc. J-STD-020
Lead (Pb)-free reflow soldering
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Detector in automotive applications
Photo interrupters
Miniature switches
• Counters
•Encoders
Position sensors
Note
Test condition see table “Basic Characteristics
Note
MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ica (mA) (deg) 0.5 (nm)
VEMT2023SLX01 2.7 ± 35 790 to 970
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMT2023SLX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view
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VEMT2023SLX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Apr-13 2Document Number: 84166
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage VCEO 20 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Power power dissipation Tamb 75 °C PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Acc. reflow profile fig. 8 Tsd 260 °C
Thermal resistance junction/ambient Acc. J-STD-051 RthJA 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21619
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
PV - Power Dissipation (mW)
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage IC = 0.1 mA VCEO 20 V
Collector dark current VCE = 5 V, E = 0 ICEO 1 100 nA
Collector emitter capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO 25 pF
Collector light current Ee = 1 mW/cm2, = 950 nm,
VCE = 5 V Ica 1.3 2.7 4.1 mA
Angle of half sensitivity ± 35 deg
Wavelength of peak sensitivity p860 nm
Range of spectral bandwidth 0.5 790 to 970 nm
Collector emitter saturation voltage IC = 0.05 mA VCEsat 0.4 V
Temperature coefficient of Ica Ee = 1 mW/cm2, = 950 nm,
VCE = 5 V TkIca 1.1 %/K
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VEMT2023SLX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Apr-13 3Document Number: 84166
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 4 - Rise/Fall Time vs. Collector Current
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
Fig. 7 - Relative Collector Current vs. Ambient Temperature
1
10
100
1000
10 000
0 102030405060708090100
Tamb - Ambient Temperature (°C)
ICE0 - Collector Dark Current (nA)
IF = 0
VCE = 70 V
VCE = 25 V
VCE = 5 V
20594
Ica - Collector Light Current (mA)
E
e
- Irradiance (mW/cm²)
0.1
1
10
100
0.01 0.1 1 10
VCE = 5 V,
λ = 950 nm
0
10
20
30
40
50
60
70
80
90
100
0 250 500 750 1000 1250 1500 1750 2000
IC - Collector Current (µA)
tr/tf - Rise/Fall Time (µs)
tf
tr
20599
RL = 100 Ω
21574
λ - Wavelength (nm)
S(λ)
rel
- Relative Spectral Sensitivity
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
600 650 700 750 800 850 900 950 1000 1050 1100
0
0.4 0.2 00.6
0.9
0.8
0° 30°10° 20°
40°
50°
60°
70°
80°
0.7
1.0
Srel - Relative Radiant Sensitivity
ϕ - Angular Displacement
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80 100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
VCE = 5 V
Ee = 1 mW/cm
2
= 950 nm
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VEMT2023SLX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Apr-13 4Document Number: 84166
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REFLOW SOLDER PROFILE
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS VEMT2023SLX01 in millimeters
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C
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VEMT2023SLX01
www.vishay.com Vishay Semiconductors
Rev. 1.0, 05-Apr-13 5Document Number: 84166
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPE AND REEL DIMENSIONS VEMT2023SLX01 in millimeters
Drawing-No.: 9.800-5123.01-4
Issue: 2; 19.02.13
specifications
according to DIN
technical drawings
Drawing refers to following types:
Reel dimensions and tape
Leader and tailer tape:
Parts mounted
Empty (400 mm min.)
Empty (160 mm min.)
Direction of pulling out
Unreel direction
Ø 62 ± 0.5
Ø 330 ± 1
Reel
2.5±0.5
Label posted here
coming out from reel
Tape position
Ø13
±0.5
12.4 ± 1.5
3000 pcs / reel
Lead I Lead II
Cathode Anode
Collector Emitter
Anode Cathode
Device
VSMB2943SLX01
VSMF2893SLX01
VSMB2948SL
VEMD2023SLX01
VEMT2023SLX01
VEMT2523SLX01
VSMY2853SL
see table
Terminal position in tape
VEMD2523SLX01
X 2:1
12 +0.3
-0.1
II
I
1.75 ± 0.1
5.5 ± 0.05
0.05
4±0.1
Ø1.55 ± 0.05
0.1 2.85± 0.1
— VISHAY. V
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Revision: 08-Feb-17 1Document Number: 91000
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