TSHF6210 Datasheet by Vishay Semiconductor Opto Division

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VISHAY. ROHS cowum emwttertechsupgorlabwshamom www.mshay com/605791000
TSHF6210
www.vishay.com Vishay Semiconductors
Rev. 1.3, 23-Aug-11 1Document Number: 81734
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 890 nm,
GaAlAs Double Hetero
DESCRIPTION
TSHF6210 is an infrared, 890 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Peak wavelength: λp = 890 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity: ϕ = ± 10°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: fc = 12 MHz
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
Infrared high speed remote control and free air data
transmission systems with high modulation frequencies or
high data transmission rate requirements
Transmission systems according to IrDA requirements and
for carrier frequency based systems (e.g. ASK/FSK -
coded, 450 kHz or 1.3 MHz)
• Smoke-automatic fire detectors
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns)
TSHF6210 180 ± 10 890 30
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSHF6210 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1.5 A
Power dissipation PV160 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W
VISHAY. emwttertechsupgort®wshaycom www.mshay com/605791000
TSHF6210
www.vishay.com Vishay Semiconductors
Rev. 1.3, 23-Aug-11 2Document Number: 81734
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21211
T
amb
- Ambient Temperature (°C)
PV - Power Dissipation (mW)
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21212
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.4 1.6 V
IF = 1 A, tp = 100 μs VF2.3 V
Temperature coefficient of VFIF = 1 mA TKVF - 1.8 mV/K
Reverse current VR = 5 V IR10 μA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj125 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie120 180 360 mW/sr
IF = 1 A, tp = 100 μs Ie1800 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe50 mW
Temperature coefficient of φeIF = 100 mA TKφe- 0.35 %/K
Angle of half intensity ϕ± 10 deg
Peak wavelength IF = 100 mA λp890 nm
Spectral bandwidth IF = 100 mA Δλ 40 nm
Temperature coefficient of λpIF = 100 mA TKλp0.25 nm/K
Rise time IF = 100 mA tr30 ns
Fall time IF = 100 mA tf30 ns
Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc12 MHz
Virtual source diameter d3.7mm
— V VISHAY. emwflertechsu on@wsha ,com www.msha com/605791000
TSHF6210
www.vishay.com Vishay Semiconductors
Rev. 1.3, 23-Aug-11 3Document Number: 81734
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01 0.1 1 10 100
tp - Pulse Duration (ms)
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
IF - Forward Current (mA)
18873
I
F
- Forward Current (mA)
1000
100
10
1
V
F
- Forward Voltage (V)
024
t
p
= 100 µs
t
p
/T = 0.001
13
1
10
100
1000
10 000
1 10 100 1000
21213
IF - Forward Current (mA)
I
e
- Radiant Intensity (mW/sr)
t
P
= 0.1 ms
0.1
1
10
100
1000
11 0 100 1000
16971
I
F
- Forward Current (mA)
- Radiant Power (mW)
e
800 900
λ - Wavelength (nm)
1000
20082
0
0.25
0.5
0.75
1.0
1.25
Φ
e rel
- Relative Radiant Power
0.4 0.2 0
I
e rel
- Relative Radiant Intensity
15989
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
VISHAY. emw“enechsuggorl@wshay.com www.mshay Com/605791000
TSHF6210
www.vishay.com Vishay Semiconductors
Rev. 1.3, 23-Aug-11 4Document Number: 81734
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
35.5 ± 0.55
0.5 + 0.15
- 0.05
5 ± 0.15
Area not plane
technical drawings
according to DIN
specifications
6.544-5259.02-4
Issue: 8; 19.05.09
95 10917
8.7 ± 0.3
2.54 nom.
1 min. < 0.7
0.5 + 0.15
- 0.05
(4.7)
AC
5.8 ± 0.15
7.7 ± 0.15
0.6 + 0.2
- 0.1
R 2.49 (sphere)
— VISHAY. V
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www.vishay.com Vishay
Revision: 01-Jan-2021 1Document Number: 91000
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