BYV28-xx Datasheet by Vishay Semiconductor Diodes Division

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BYV28-50, BYV28-100, BYV28-150, BYV28-200
www.vishay.com Vishay Semiconductors
Rev. 1.9. 21-Feb-18 1Document Number: 86044
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultra-Fast Avalanche Sinterglass Diode
DESIGN SUPPORT TOOLS
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
Controlled avalanche characteristic
Low forward voltage
Ultra fast recovery time
Glass passivated junction
Hermetically sealed package
AEC-Q101 qualified
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Very fast rectification e.g. for switch mode power supply
949588
click logo to get started
Available
Models
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYV28-200 BYV28-200-TR 2500 per 10" tape and reel 12 500
BYV28-200 BYV28-200-TAP 2500 per ammopack 12 500
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYV28-50 VR = 50 V; IF(AV) = 3.5 A SOD-64
BYV28-100 VR = 100 V; IF(AV) = 3.5 A SOD-64
BYV28-150 VR = 150 V; IF(AV) = 3.5 A SOD-64
BYV28-200 VR = 200 V; IF(AV) = 3.5 A SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage See electrical characteristics
BYV28-50 VR = VRRM 50 V
BYV28-100 VR = VRRM 100 V
BYV28-150 VR = VRRM 150 V
BYV28-200 VR = VRRM 200 V
Peak reverse voltage, non repetitive See electrical characteristics
BYV28-50 VRSM 55 V
BYV28-100 VRSM 110 V
BYV28-150 VRSM 165 V
BYV28-200 VRSM 220 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 90 A
Repetitive peak forward current IFRM 25 A
Average forward current IF(AV) 3.5 A
Pulse energy in avalanche mode, non
repetitive (inductive load switch off) I(BR)R = 1 A, Tj = 175 °C ER20 mJ
Junction and storage temperature range Tj = Tstg -55 to +175 °C
VISHAY. DwodesAmencas@\/wshay.com DwodesAswa@\/wshay.com DwodesEuvogemusnauom www.v\shay.com/doc?91000
BYV28-50, BYV28-100, BYV28-150, BYV28-200
www.vishay.com Vishay Semiconductors
Rev. 1.9. 21-Feb-18 2Document Number: 86044
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 25 K/W
On PC board with spacing 25 mm RthJA 70 K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 5 A VF--1.1V
IF = 5 A, Tj = 175 °C VF- - 0.89 V
Reverse current
VR = VRRM IR--1μA
VRSM I
R- - 100 μA
VR = VRRM, Tj = 165 °C IR- - 150 μA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 30 ns
0
10
20
30
40
151050 202530
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949548
ll
TL = constant
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
100
0.0 0.4 0.8 1.2 1.6 2.0
V
F
- Forward Voltage (V)
16453
T
j
= 175 °C
T
j
= 25 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 20 40 60 80 100 120 140 160 180
T
amb
- Ambient Temperature (°C)
16454
I
FAV
- Average Forward Current (A)
V
R
= V
RRM
half sine wave
R
thJA
25 K/W
l = 10 mm
R
thJA
70 K/W
PCB: d = 25 mm
1
10
100
1000
25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
16455
VR = VRRM
IR - Reverse Current (A)
VISHAY. W5 DwodesAmencas@\/wshay.com DwodesAswa@wshay.com DwodesEuvogemushauom www.v\shay.com/doc?91000
BYV28-50, BYV28-100, BYV28-150, BYV28-200
www.vishay.com Vishay Semiconductors
Rev. 1.9. 21-Feb-18 3Document Number: 86044
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
0
10
20
30
40
50
60
25 50 75 100 125 150 175
16456
VR = VRRM
PR - Reverse Power Dissipation (mW)
PR - Limit
at 100 % VR
Tj - Junction Temperature (°C)
PR - Limit
at 80 % VR
0
50
100
150
200
250
0.1 1 10 100
VR - Reverse Voltage (V)
16457
CD - Diode Capacitance (pF)
f = 1 MHz
Cathode Identification 4.3 (0.168) max.
1.35 (0.053) max.
4 (0.156) max.
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
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Revision: 08-Feb-17 1Document Number: 91000
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