ZXTP2029FTA Datasheet by Diodes Incorporated

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Issue 3 - May 2007 1 www.zetex.com
© Zetex Semiconductors plc 2007
ZXTP2029F
100V, SOT23, PNP medium power transistor
Summary
V(BR)CEV > -130V, V(BR)CEO > -100V
IC(cont) = -3A
RCE(sat) = 45m typical
VCE(sat) < -80mV @ -1A
PD = 1.2W
Complementary part number ZXTN2020F
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally suited
to applications where space is at a premium.
Features
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
130V forward blocking voltage
Applications
MOSFET and IGBT gate driving
Motor drive
DC-DC converters
High side switches
Ordering information
Device marking
953
Device Reel size
(inches)
Tape width Quantity per reel
ZXTP2029FTA 7 8mm 3,000
C
E
B
C
E
B
Pinout - top view
ZXTP2029F
Issue 3 - May 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
Thermal resistance
Parameter Symbol Limit Unit
Collector-base voltage VCBO -130 V
Collector-emitter voltage V(BR)CEV -130 V
Collector-emitter voltage VCEO -100 V
Emitter-base voltage VEBO -7.0 V
Peak pulse current ICM -5 A
Continuous collector current(a) IC-3 A
Base current IB-1 A
Power dissipation @ TA=25oC(a)
Linear derating factor
PD1.0
8.0
W
mW/oC
Power dissipation @ TA=25oC(b)
Linear derating factor
PD1.2
9.6
W
mW/oC
Power dissipation @ TA=25oC(c)
Linear derating factor
PD1.56
12.5
W
mW/oC
Operating and storage temperature Tj:Tstg -55 to +150 oC
Parameter Symbol Value Unit
Junction to ambient (a)
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
RθJA 125 oC/W
Junction to ambient (b)
(b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
RθJA 104 oC/W
Junction to ambient (c)
(c) As (b) above measured at t<5secs.
RθJA 80 oC/W
12 ll A 10 seenole(b) A ‘ ‘ g E 1 0 see nolem) E g ’ l; '5 0.8 s 1 3 l. DC V, 06 9 15 5 seenale(a) 810m" 100ms _ 04 g 10m5 g Q SlnglePulse ms 0 02 um Tm:25“C lDUus % 00 \\ —. m V 100m 1 _ 10 100 g 0 20 40 60 so 100 120 140 160 —VCE Collector-Emlller Vollage (V) Temperature (“0) Safe Operating Area Derafing Curve 120 T =25-c A m. Single Pulse E 100 seenmem A ‘00 Tmflsac g3 so 3 seenmem) 8 g I: so ° 10 E n. m 'E 40 § § Single Pulse g _ 20 D’DOS X m l m 1 E l E ‘— o 2 100p 1m mm 100m 1 10 100 lk 100p 1m 10m 100m 1 10 100 1k ’— Pulse Wldlh (5) Pulse Width (5) Transient Thermal Impedance Pulse Power Dissipation 100“ 10“ Failure may occur in rhls reglon W avwam 30v Tm:25’ c -|C Collector Current (A) u 20 40 so so 100120140160150 -VCE Collector-EminerVollage (V) Safe Operating Area
ZXTP2029F
Issue 3 - May 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Characteristics
ZXTP2029F
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© Zetex Semiconductors plc 2007
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
V(BR)CBO -130 -160 V IC=-100μA
Collector-emitter breakdown
voltage
V(BR)CEV -130 -160 V IC =1μA, 1V> VBE>-0.3V
Collector-emitter breakdown
voltage
V(BR)CEO -100 -120 V IC=-10mA (a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300S. Duty cycle 2%.
Emitter-base breakdown
voltage
V(BR)EBO -7.0 -8.3 V IE=-100μA
Collector-emitter cut-off
current
ICEV -20 nA VCE=-100V,
VBE = 1V
Collector-base cut-off current ICBO -20 nA VCB=-100V
Emitter-base cut-off current IEBO -10 nA VEB=-6V
Static forward current
transfer ratio
HFE 100
100
40
220
200
75
300
IC=-10mA, VCE=-2V(a)
IC=-1A, VCE=-2V(a)
Ic=-3A, VCE=-2V
Collector-emitter saturation
voltage
VCE(sat) -20
-60
-135
-180
-30
-80
-180
-250
mV
mV
mV
mV
IC=-100mA, IB=-10mA(a)
IC=-1A, IB=-100mA(a)
IC=-3A, IB=-300mA(a)
IC=-4A, IB=-400mA(a)
Base-emitter saturation
voltage
VBE(sat) -0.90 -1.00 V IC=-3A, IB=-300mA(a)
Base-emitter turn-on voltage VBE(on) -0.81 -0.90 V IC=-3A, VCE=-2V(a)
Transition frequency fT150 MHz Ic=-100mA, VCE=-10V,
f=50MHz
Output capacitance Cobo 39 pF VCB=-10V, f=1MHz
Delay timetime t(d) 21 ns VCC=-10V, IC=-1A,
IB1=IB2=-100mA
Rise time t(r) 12 ns
Storage time t(stg) 410 ns
Fall time t(f) 35 ns
' Vcasm 1V) 8 E 141510 10m 1m 10m 100m 1 10 1m 10m 100m 1 10 - |c Collector Current (A) - |c Collector Current (A) VCE[SAT] V '0 VCE(SAT) V '0 1 4 1.2 E a 1.0 (D 1: 0.0 G) (E 0.6 E 0.4 o 2 0.2 0.0 1m ‘lOm 100m 1 10 1m 10m 100m 1 10 - |C Collector Current (A) - |C Collector Current (A) has V Ic VBE(SAT) V lo 3 2 9 m m > 100%: 1m 10m 100m 1 10 » |C Collector Current (A) Vaaou) V In
ZXTP2029F
Issue 3 - May 2007 5 www.zetex.com
© Zetex Semiconductors plc 2007
Typical characteristics
ZXTP2029F
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© Zetex Semiconductors plc 2007
Intentionally left blank
ZXTP2029F
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© Zetex Semiconductors plc 2007
Package outline - SOT23
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Min. Max.
A - 1.12 - 0.044 e1 1.90 NOM 0.075 NOM
A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104
b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055
c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236
D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024
e0.95 NOM0.037 NOM-----
E
e
L
e1
D
A
c
E1
L1
A1
b
3 leads
ZXTP2029F
Issue 3 - May 2007 8 www.zetex.com
© Zetex Semiconductors plc 2007
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© 2007 Published by Zetex Semiconductors plc
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