ZXMN3B14F Datasheet by Diodes Incorporated

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1
SEMICONDUCTORS
SUMMARY
V(BR)DSS=30V : RDS(on)=0.08 ; ID=3.5A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
DC-DC converters
Power management functions
Disconnect switches
Motor control
DEVICE MARKING
3B4
ZXMN3B14F
ISSUE 2 - JANUARY 2006
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3B14FTA 7 8mm 3,000 units
ZXMN3B14FTC 13” 8mm 10,000 units
ORDERING INFORMATION PINOUT
PACKAGE
25 TEX
ZXMN3B14F
SEMICONDUCTORS
ISSUE 2 - JANUARY 2006
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RJA 125 °C/W
Junction to Ambient (b) RJA 83 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current @ VGS=4.5V;T
A=25°C (b)
@V
GS=4.5V;T
A=70°C (b)
@V
GS=4.5V;T
A=25°C (a)
ID3.5
2.9
2.9
A
A
A
Pulsed Drain Current (c) IDM 16 A
Continuous Source Current (Body Diode) (b) IS2.4 A
Pulsed Source Current (Body Diode) (c) ISM 16 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD1
8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD1.5
12
W
mW/°C
Operating and Storage Temperature Range Tj,T
stg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
ID Drain Current (A) .o 01 I ID vns Draianource Voltage (V) Output characteristics |D Drain Current {A} um 10 0,1 m 1 ID VDs Draianource Voitage (V) Output Characteristics |D Drain Current (A) 1: HOT 1 2 VGs Gare-Source Voltage (Vr Typical Transfer character Narmahsed BMW and v“ LS esv .1A 'o in < vgs="v”S" i3="15mm" a-="" n="" a="" i="" 50="" a="" 50="" 100="" t]="" junction="" temperature="" (”ci="" normalised="" curves="" v="" temperature="" r50="" rnsw="" drainesource="" onaresistance="" nm="" in="" 01="" 0,01="" 10="" w="" id="" drain="" current="" (a)="" orr-resistance="" v="" drain="" current="" reverse="" drain="" current="" (a)="" t:="" i5d°c="" p="" 0.0="" 0.2="" o»="" o="" s="" vsd="" source-drain="" voitage="" (v)="" source»drain="" diode="" forward="" voltage="" as="" 1'0="" 1'2="" zetex="">
ZXMN3B14F
SEMICONDUCTORS
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TYPICAL CHARACTERISTICS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 30 V ID= 250A, VGS=0V
Zero Gate Voltage Drain Current IDSS 1AV
DS=30V,V
GS=0V
Gate-Body Leakage IGSS 100 nA VGS=12V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 0.7 V ID= 250A, VDS=VGS
Static Drain-Source On-State
Resistance (1)
RDS(on) 0.080
0.140
VGS=4.5V,I
D=3.1A
VGS=2.5V,I
D=2.2A
Forward Transconductance (1) (3) gfs 8.5 S VDS=15V,I
D=3.1A
DYNAMIC (3)
Input Capacitance Ciss 568 pF VDS=15V,V
GS=0V
f=1MHz
Output Capacitance Coss 101 pF
Reverse Transfer Capacitance Crss 66 pF
SWITCHING(2) (3)
Turn-On-Delay Time td(on) 3.6 ns VDD=15V,V
GS=4.5V
ID=1A
RG6.0
Rise Time tr4.9 ns
Turn-Off Delay Time td(off) 17.3 ns
Fall Time tf9.8 ns
Total Gate Charge Qg6.7 nC VDS=15V,V
GS=4.5V
ID=3.1A
Gate-Source Charge Qgs 1.4 nC
Gate Drain Charge Qgd 1.8 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.82 0.95 V Tj=25°C, IS=3.1A,
VGS=0V
Reverse Recovery Time (3) trr 10.8 ns Tj=25°C, IF=1.6A,
di/dt=100A/s
Reverse Recovery Charge (3) Qrr 4.54 nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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N-CHANNEL TYPICAL CHARACTERISTICS
ZXMN3B14F
SEMICONDUCTORS
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N-CHANNEL TYPICAL CHARACTERISTICS
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Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex Semiconductors plc 2005
DIM
MILLIMETRES INCHES
DIM
MILLIMETRES INCHES
MIN MAX MIN MAX MIN MAX MIN MAX
A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C1.10 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM 10TYP 10TYP
PACKAGE DIMENSIONS
PACKAGE OUTLINE PAD LAYOUT
Controlling dimensions are in millimetres. Approximate conversions are given in inches

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