PSMN1R5-30BLE Datasheet by Nexperia USA Inc.

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Fig. 2 Fig. 12 Fig. 12 Fig. 14 Fig. 15 Fig. 14 Fig. 15 nexpefla
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
12 October 2012 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
Enhanced forward biased safe operating area for superior linear mode operation
Very low Rdson for low conduction losses
1.3 Applications
Electronic fuse
Hot swap
Load switch
Soft start
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V
IDdrain current Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - - 120 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 401 W
Static characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
- 1.3 1.5 mΩRDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12
- 1.7 1.85 mΩ
Dynamic characteristics
QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 15 V;
Fig. 14; Fig. 15
- 33.2 - nC
QG(tot) total gate charge VGS = 10 V; ID = 25 A; VDS = 15 V;
Fig. 14; Fig. 15
- 228 - nC
PSMN1R5-3OBLE mb man s nuntm-avznw unmumm
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
PSMN1R5-30BLE All information provided in this document is subject to legal disclaimers.
Product data sheet 12 October 2012 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalanche
energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; unclamped; RGS = 50 Ω;
Fig. 3
- - 1990 mJ
[1] Capped at 120A due to package
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 D drain[1]
3 S source
mb D mounting base; connected to
drain
mb
1 3
2
D2PAK (SOT404)
S
D
G
mbb076
[1] It is not possible to make connection to pin 2.
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN1R5-30BLE D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
4. Marking
Table 4. Marking codes
Type number Marking code
PSMN1R5-30BLE PSMN1R5-30BLE
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V
VDGR drain-gate voltage Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ - 30 V
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© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
PSMN1R5-30BLE All information provided in this document is subject to legal disclaimers.
Product data sheet 12 October 2012 3 / 13
Symbol Parameter Conditions Min Max Unit
VGS gate-source voltage -20 20 V
VGS = 10 V; Tmb = 100 °C; Fig. 1 [1] - 120 AIDdrain current
VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - 120 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 1521 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 401 W
Tstg storage temperature -55 175 °C
Tjjunction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode
ISsource current Tmb = 25 °C [1] - 120 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1521 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; unclamped; RGS = 50 Ω;
Fig. 3
- 1990 mJ
[1] Capped at 120A due to package
003aaj351
0
100
200
300
400
0 50 100 150 200
Tmb(°C)
ID
(A)
(1)
(1) Capped at 120A due to package
Fig. 1. Continuous drain current as a function of
mounting base temperature
Tmb (°C)
0 20015050 100
03aa16
40
80
120
Pder
(%)
0
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
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© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
PSMN1R5-30BLE All information provided in this document is subject to legal disclaimers.
Product data sheet 12 October 2012 4 / 13
003aaj359
10
102
103
10-3 10-2 10-1 1 10
tAL
(ms)
IAL
(A)
(1)
(2)
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
003aaj352
1
10
102
103
104
10-1 1 10 102
VDS(V)
ID
(A) Limit RDSon = VDS/ ID
DC
100 µs
10 ms
tp=10 µs
100 ms
1 ms
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction to
mounting base
Fig. 5 - 0.3 0.37 K/W
Rth(j-a) thermal resistance
from junction to
ambient
minimum footprint; FR4 board - 50 - K/W
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© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
PSMN1R5-30BLE All information provided in this document is subject to legal disclaimers.
Product data sheet 12 October 2012 5 / 13
003aaj353
single shot
0.2
0.1
0.05
10-3
10-2
10-1
1
10-6 10-5 10-4 10-3 10-2 10-1 1
tp(s)
Zth(j-mb)
(K/W)
δ= 0.5
0.02
tp
T
P
t
tp
T
δ =
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - VV(BR)DSS drain-source
breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
0.5 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 11; Fig. 10
1.3 1.7 2.15 V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
- - 2.45 V
VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.5 10 µAIDSS drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 100 °C - - 200 µA
VGS = 16 V; VDS = 0 V; Tj = 25 °C - 10 100 nAIGSS gate leakage current
VGS = -16 V; VDS = 0 V; Tj = 25 °C - 10 100 nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
- 1.3 1.5 mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 12; Fig. 13
- - 2.1
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12
- 1.7 1.85 mΩ
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 13
- - 2.9
PSMN1R5-3OBLE Fig. 14 Fig. 15 Fig. 14 Fig. 15 Hg. 14 Flg 15 Fig. 14 Fig. 15 Fig. 16 Fig. 17 .anmn "mum.”
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
PSMN1R5-30BLE All information provided in this document is subject to legal disclaimers.
Product data sheet 12 October 2012 6 / 13
Symbol Parameter Conditions Min Typ Max Unit
RGinternal gate
resistance (AC)
f = 1 MHz 0.5 1.1 2.2 Ω
Dynamic characteristics
ID = 25 A; VDS = 15 V; VGS = 10 V;
Fig. 14; Fig. 15
- 228 - nC
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15
- 108 - nC
QG(tot) total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V - 210 - nC
QGS gate-source charge - 31.8 - nC
QGS(th) pre-threshold gate-
source charge
- 21.5 - nC
QGS(th-pl) post-threshold gate-
source charge
- 10.3 - nC
QGD gate-drain charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15
- 33.2 - nC
VGS(pl) gate-source plateau
voltage
ID = 25 A; VDS = 15 V; Fig. 14; Fig. 15 - 2.5 - V
Ciss input capacitance - 14934 - pF
Coss output capacitance - 2741 - pF
Crss reverse transfer
capacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
- 1168 - pF
td(on) turn-on delay time - 100.6 - ns
trrise time - 156.1 - ns
td(off) turn-off delay time - 191.8 - ns
tffall time
VDS = 15 V; RL = 0.6 Ω; VGS = 4.5 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
- 99.2 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.78 1.2 V
trr reverse recovery time - 62.5 - ns
Qrrecovered charge
IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V;
VDS = 15 V - 96.8 - nC
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© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
PSMN1R5-30BLE All information provided in this document is subject to legal disclaimers.
Product data sheet 12 October 2012 7 / 13
003aaj354
0
15
30
45
60
75
0 0.5 1 1.5
VDS(V)
ID
(A)
VGS(V) = 2.2
2.6
2.8
3.5
4.5
10
2.4
3
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
003aaj355
0
1
2
3
4
5
0 4 8 12 16
VGS(V)
RDSon
(mΩ)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aaj356
0
50
100
150
200
250
0 25 50 75 100
ID(A)
gfs
(S)
Fig. 8. Forward transconductance as a function of
drain current; typical values
003aaj357
0
50
100
150
200
250
0 1 2 3 4
VGS(V)
ID
(A)
Tj= 25 °C
Tj= 175 °C
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
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© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
PSMN1R5-30BLE All information provided in this document is subject to legal disclaimers.
Product data sheet 12 October 2012 8 / 13
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
003aaj514
10-6
10-5
10-4
10-3
10-2
10-1
0 1 2 3
VGS(V)
ID
(A)
max
typ
min
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
003aaj358
0
4
8
12
16
20
20 40 60 80 100
ID(A)
RDSon
(mΩ)
4.5
VGS (V) = 2.6
10
3.5
3
4.5
VGS(V) = 2.6
10
3.5
3
2.8
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
003aag820
0
0.5
1
1.5
2
-60 0 60 120 180
Tj(°C)
a
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
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© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
PSMN1R5-30BLE All information provided in this document is subject to legal disclaimers.
Product data sheet 12 October 2012 9 / 13
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
Fig. 14. Gate charge waveform definitions
003aai322
0
2.5
5
7.5
10
0 60 120 180 240
QG(nC)
VGS
(V)
VDS= 15V
24 V
6 V
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
003aai323
103
104
105
10-1 1 10 102
VDS(V)
C
(pF)
Ciss
Crss
Coss
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aaj361
0
20
40
60
80
100
120
0 0.3 0.6 0.9 1.2
VSD(V)
IS
(A)
Tj= 25 °C
Tj= 150°C
Fig. 17. Source current as a function of source-drain
voltage; typical values
PSMN1R5-3OBLE SOT404 a©m :NprlnaBV my Mum: 15mg
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
PSMN1R5-30BLE All information provided in this document is subject to legal disclaimers.
Product data sheet 12 October 2012 10 / 13
8. Package outline
UNIT A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
A1D1
D
max. Ee LpHDQc
2.54 2.60
2.20
15.80
14.80
2.90
2.10
11 1.60
1.20
10.30
9.70
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
b
DIMENSIONS (mm are the original dimensions)
SOT404
0 2.5 5 mm
scale
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404
e e
E
b
D1
HD
D
Q
Lp
c
A1
A
1 3
2
mounting
base
05-02-11
06-03-16
Fig. 18. Package outline D2PAK (SOT404)
cl he m sign. ala sneer is explained in s o: device‘s) described 5 document was publis he meet pmduct 5m hugJ/wwwnexgna PSMN1R5-3OBLE ms Mcummerclal sale 7 Nexpsr meet to me general terms and can My llwww nexg a cam/Emf all a Mum-u Ev 2m mm mmfl
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
PSMN1R5-30BLE All information provided in this document is subject to legal disclaimers.
Product data sheet 12 October 2012 11 / 13
9. Legal information
9.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
9.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customers own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customers sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customers applications and products planned, as well as for the planned
application and use of customers third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customers applications or products, or the application or use by
customers third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customers third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customers general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
PSMN1R5-3OBLE nurw-mavznw "mum"...
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
PSMN1R5-30BLE All information provided in this document is subject to legal disclaimers.
Product data sheet 12 October 2012 12 / 13
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
9.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
PSMN1R5-3OBLE nurw-mavznw "mum"...
© Nexperia B.V. 2017. All rights reserved
Nexperia PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
PSMN1R5-30BLE All information provided in this document is subject to legal disclaimers.
Product data sheet 12 October 2012 13 / 13
10. Contents
1 Product profile ....................................................... 1
1.1 General description .............................................. 1
1.2 Features and benefits ...........................................1
1.3 Applications .......................................................... 1
1.4 Quick reference data ............................................ 1
2 Pinning information ............................................... 2
3 Ordering information ............................................. 2
4 Marking ................................................................... 2
5 Limiting values .......................................................2
6 Thermal characteristics .........................................4
7 Characteristics .......................................................5
8 Package outline ................................................... 10
9 Legal information .................................................11
9.1 Data sheet status ............................................... 11
9.2 Definitions ...........................................................11
9.3 Disclaimers .........................................................11
9.4 Trademarks ........................................................ 12
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
12 October 2012

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