VS-15xWL06FN-M3 Datasheet by Vishay Semiconductor Diodes Division

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VS-15AWL06FN-M3, VS-15EWL06FN-M3
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Revision: 04-Oct-16 1Document Number: 93568
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Ultralow VF Ultrafast Rectifier, 15 A FRED Pt®
FEATURES
Ultrafast recovery time, extremely low VF and
soft recovery
175 °C maximum operating junction temperature
For PFC DCM operation
Low leakage current
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art, ultralow VF, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
PRODUCT SUMMARY
Package TO-252AA (D-PAK)
IF(AV) 15 A
VR600 V
VF at IF0.85 V
trr (typ.) 60 ns
TJ max. 175 °C
Diode variation Single die
TO-252AA (D-PAK)
VS-15EWL06FN-M3
2, 4
3
Anode
1
N/C
VS-15AWL06FN-M3
4, 2
3
Anode
1
Anode
Base cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage VRRM 600 V
Average rectified forward current IF(AV) TC = 148 °C 15
ANon-repetitive peak surge current IFSM TJ = 25 °C 180
Peak repetitive forward current IFM TC = 148 °C, f = 20 kHz, d = 50 % 30
Operating junction and storage temperatures TJ, TStg -65 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VRIR = 100 μA 600 - -
V
Forward voltage VF
IF = 15 A - 0.99 1.05
IF = 15 A, TJ = 150 °C - 0.85 0.92
Reverse leakage current IR
VR = VR rated - - 10 μA
TJ = 150 °C, VR = VR rated - - 120
Junction capacitance CTVR = 600 V - 11 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8 - nH
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VS-15AWL06FN-M3, VS-15EWL06FN-M3
www.vishay.com Vishay Semiconductors
Revision: 04-Oct-16 2Document Number: 93568
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 60 120
ns
IF = 15 A, dIF/dt = 100 A/μs, VR = 30 V - 190 -
TJ = 25 °C
IF = 15 A
dIF/dt = 200 A/μs
VR = 390 V
- 220 -
TJ = 125 °C - 290 -
Peak recovery current IRRM
TJ = 25 °C - 21 - A
TJ = 125 °C - 25 -
Reverse recovery charge Qrr
TJ = 25 °C - 2.6 - μC
TJ = 125 °C - 4 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range TJ, TStg -65 - 175 °C
Thermal resistance,
junction to case per leg RthJC -1.41.8
°C/W
Thermal resistance,
junction to ambient per leg RthJA --70
Approximate weight 0.3 g
0.01 oz.
Marking device Case style TO-252AA (D-PAK) 15AWL06FN
15EWL06FN
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VS-15AWL06FN-M3, VS-15EWL06FN-M3
www.vishay.com Vishay Semiconductors
Revision: 04-Oct-16 3Document Number: 93568
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
0.2 0.4 0.6 1.0 1.4 1.80.8 1.2 1.6
0.1
1
10
100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
0 100 200 300 500400 600
0.0001
0.001
0.01
0.1
1
10
100
TJ = 125 °C
TJ = 175 °C
TJ = 150 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 100 200 400 500300 600
1
100
10
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
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Revision: 04-Oct-16 4Document Number: 93568
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
2015105 25
0
160
180
120
140
150
170
130
Square wave (D = 0.50)
Rated VR applied
See note (1)
DC
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
2015105 25
0
20
0
10
15
5
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
trr (ns)
dIF/dt (A/μs)
100 1000
0
450
150
250
350
400
100
50
200
300
IF = 15 A, TJ = 25 °C
IF = 15 A, TJ = 125 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
100 1000
1500
5000
2500
3000
4000
3500
4500
2000
IF = 15 A, TJ = 25 °C
IF = 15 A, TJ = 125 °C
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VS-15AWL06FN-M3, VS-15EWL06FN-M3
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Revision: 04-Oct-16 5Document Number: 93568
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Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
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VS-15AWL06FN-M3, VS-15EWL06FN-M3
www.vishay.com Vishay Semiconductors
Revision: 04-Oct-16 6Document Number: 93568
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-15AWL06FN-M3 75 3000 Antistatic plastic tube
VS-15EWL06FN-M3
VS-15AWL06FNTR-M3 2000 2000 13" diameter reel
VS-15EWL06FNTR-M3
VS-15AWL06FNTRL-M3 3000 3000 13" diameter reel
VS-15EWL06FNTRL-M3
VS-15AWL06FNTRR-M3 3000 3000 13" diameter reel
VS-15EWL06FNTRR-M3
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95627
Part marking information www.vishay.com/doc?95176
Packaging information www.vishay.com/doc?95033
SPICE model www.vishay.com/doc?95372
3
- Current rating (15 = 15 A)
5
- Package identifier:
W = D-PAK
6
- L = hyperfast rectifier
7
- Voltage rating (06 = 600 V)
8
- FN = TO-252AA
9
-
TR = tape and reel
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
4
- Circuit configuration:
A = single diode (2 anodes)
E = single diode
2
- Vishay Semiconductors product
1
- Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
Device code
51 32 4 6 7 8 9
15VS- A W L 06 FN TRL -M3
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Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 24-Jun-16 1Document Number: 95627
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D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC® outline TO-252AA
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094 e 2.29 BSC 0.090 BSC
A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410
b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.76 1.14 0.030 0.045 L1 2.74 BSC 0.108 REF.
b3 4.95 5.46 0.195 0.215 3 L2 0.51 BSC 0.020 BSC
c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 3
c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040
D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 2
D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10°
E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15°
E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35°
Ø 1
E
(5)
b3 (3) 0.010 CAB
L3 (3)
B
AC
H
C
L2
D (5)
L4
b
2 x e
b2
(2) L5
123
4
Ø 2
A
c2 A
A
H
Seating
plane
c
Detail “C”
(7)
Seating
plane
A1
Detail “C”
Rotated 90 °CW
Scale: 20:1
(L1)
C
C
L
Ø
Gauge
plane
Lead tip
M
0.010 CAB
M
32
4
1
E1
D1
MIN.
0.265
(6.74)
MIN.
0.245
(6.23)
MIN.
0.089
(2.28)
MIN.
0.06
(1.524)
0.488 (12.40)
0.409 (10.40)
0.093 (2.38)
0.085 (2.18)
Pad layout
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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