Si8802DB Datasheet by Vishay Siliconix

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Si8802DB
www.vishay.com Vishay Siliconix
S15-0346-Rev. C, 23-Feb-15 1Document Number: 67999
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 8 V (D-S) MOSFET
Marking Code: xx = AB
xxx = Date/Lot traceability code
Ordering Information:
Si8802DB-T2-E1 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
Small 0.8 mm x 0.8 mm outline area
Low 0.4 mm max. profile
Low On-resistance
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Load switch with low voltage drop
Load switch for 1.2 V, 1.5 V, 1.8 V
power lines
Smart phones, tablet PCs, portable
media players
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)I
D (A) aQg (TYP.)
8
0.054 at VGS = 4.5 V 3.5
4.3 nC
0.060 at VGS = 2.5 V 3.3
0.068 at VGS = 1.8 V 3.1
0.086 at VGS = 1.5 V 2.3
0.135 at VGS = 1.2 V 1
MICRO FOOT® 0.8 x 0.8
Backside View
1
0.8 mm
0.8 mm
xxx
xx
Bump Side View
1
G
4
D
S
3
S
2
1
G
4
S
3
2
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 8V
Gate-Source Voltage VGS ± 5
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
ID
3.5 a
A
TA = 70 °C 2.8 a
TA = 25 °C 3 b
TA = 70 °C 2.4 b
Pulsed Drain Current (t = 300 μs) IDM 15
Continuous Source-Drain Diode Current TA = 25 °C IS
0.7 a
TA = 25 °C 0.4 b
Maximum Power Dissipation
TA = 25 °C
PD
0.9 a
W
TA = 70 °C 0.6 a
TA = 25 °C 0.5 b
TA = 70 °C 0.3 b
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Soldering Recommendations (Peak Temperature) c260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient a, d
t 5 s RthJA
105 135 °C/W
Maximum Junction-to-Ambient b, e 200 260
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Si8802DB
www.vishay.com Vishay Siliconix
S15-0346-Rev. C, 23-Feb-15 2Document Number: 67999
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 8 - - V
VDS Temperature Coefficient ΔVDS/TJID = 250 μA -7-
mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ--2.1-
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 0.35 - 0.7 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 8 V, VGS = 0 V - - 1
μA
VDS = 8 V, VGS = 0 V, TJ = 55 °C - - 10
On-State Drain Current a ID(on) V
DS 5 V, VGS = 4.5 V 10 - - A
Drain-Source On-State Resistance a RDS(on)
VGS = 4.5 V, ID = 1 A - 0.044 0.054
Ω
VGS = 2.5 V, ID = 1 A - 0.049 0.060
VGS = 1.8 V, ID = 0.5 A - 0.055 0.068
VGS = 1.5 V, ID = 0.2 A - 0.060 0.086
VGS = 1.2 V, ID = 0.1 A - 0.080 0.135
Forward Transconductance a gfs VDS = 4 V, ID = 1 A - 13 - S
Dynamic b
Total Gate Charge Qg
VDS = 4 V, VGS = 4.5 V, ID = 1 A
-4.36.5
nCGate-Source Charge Qgs -0.44-
Gate-Drain Charge Qgd -0.72-
Gate Resistance Rgf = 1 MHz - 3.5 - Ω
Turn-On Delay Time td(on)
VDD = 4 V, RL = 4 Ω
ID 1 A, VGEN = 4.5 V, Rg = 1 Ω
-510
ns
Rise Time tr -1530
Turn-Off Delay Time td(off) -2240
Fall Time tf-715
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISTA = 25 °C - - 0.7 A
Pulse Diode Forward Current ISM --15
Body Diode Voltage VSD IS = 1 A, VGS = 0 V - 0.7 1.2 V
Body Diode Reverse Recovery Time trr
IF = 1 A, di/dt = 100 A/μs, TJ = 25 °C
-2040ns
Body Diode Reverse Recovery Charge Qrr -510nC
Reverse Recovery Fall Time ta-14-ns
Reverse Recovery Rise Time tb-60-
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Si8802DB
www.vishay.com Vishay Siliconix
S15-0346-Rev. C, 23-Feb-15 3Document Number: 67999
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
3
6
9
12
15
0 0.5 1 1.5 2 2.5 3
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
VGS = 1.5 V
VGS = 5 V thru 2 V
V
GS
= 1 V
GS
GS
0
1
2
3
4
5
0 1 2 3 4 5
VGS -Gate-to-Source Voltage (V)
Qg-Total Gate Charge (nC)
VDS= 6.4 V
VDS= 2 V
VDS= 4 V
ID= 1 A
0
2
4
6
8
10
0.0 0.3 0.6 0.9 1.2 1.5
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
TC= 25 °C
TC= 125 °C
TC= - 55 °C
0
100
200
300
400
500
600
0 2 4 6 8
C - Capacitance (pF)
VDS-Drain-to-Source Voltage (V)
C
iss
Coss
C
rss
0.6
0.8
1.0
1.2
1.4
- 50 - 25 0 25 50 75 100 125 150
RDS(on) -On-Resistance (Normalized)
TJ- Junction Temperature (°C)
VGS = 1.5 V, ID = 0.2 A
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1 A
VGS = 1.2 V, ID = 0.1 A
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Si8802DB
www.vishay.com Vishay Siliconix
S15-0346-Rev. C, 23-Feb-15 4Document Number: 67999
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS-Source Current (A)
VSD-Source-to-Drain Voltage (V)
TJ= 150 °C
TJ= 25 °C
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
VGS(th) (V)
TJ-Temperature (°C)
ID= 250 μA
0
0.03
0.06
0.09
0.12
0.15
012345
RDS(on) -On-Resistance (Ω)
VGS -Gate-to-Source Voltage (V)
TJ= 125 °C
T
J
= 25 °C
ID= 1 A
0
2
4
6
8
10
12
14
Power (W)
Time (s)
10 10000.10.010.001 1001
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
10 s, 1 s, 100 ms
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
100 μs
DC
VISHAY. pmosmcnsuggonviwshaymm www.v\shay.com/doc?91000
Si8802DB
www.vishay.com Vishay Siliconix
S15-0346-Rev. C, 23-Feb-15 5Document Number: 67999
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating* Power Derating
Note
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation PD is based on TJ (max.) = 150 °C,n using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
0.5
1
1.5
2
2.5
3
3.5
0 25 50 75 100 125 150
ID- Drain Current (A)
TA- Ambient Temperature (°C)
0.0
0.2
0.4
0.6
0.8
25 50 75 100 125 150
TA- Ambient Temperature (°C)
Power Dissipation (W)
VISHAY. www.mshay Cum/ggg’57999 pmosmcnsuggomiwshamam www.v\shay,com/doc?91000
Si8802DB
www.vishay.com Vishay Siliconix
S15-0346-Rev. C, 23-Feb-15 6Document Number: 67999
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Maximum Copper)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Minimum Copper)
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67999.
0.001 0.01 1 10 10000.10.0001 100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA = 185 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
0.001 0.01 1 10 10000.10.0001 100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA = 330 °C/W
3. TJM -T
A=P
DMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
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Package Information
www.vishay.com Vishay Siliconix
Revision: 16-Feb-15 1Document Number: 69442
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MICRO FOOT®: 4-Bump (0.8 mm x 0.8 mm, 0.4 mm Pitch)
Notes
(1) Laser mark on the backside surface of die
(2) Bumps are 95.5 % Sn,3.8 % Ag,0.7 % Cu
(3) “i” is the location of pin 1
(4) “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined.
(5) Non-solder mask defined copper landing pad.
Note
a. Use millimeters as the primary measurement.
DIM. MILLIMETERS aINCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.328 0.365 0.402 0.0129 0.0144 0.0158
A1 0.136 0.160 0.184 0.0053 0.0062 0.0072
A2 0.192 0.205 0.218 0.0076 0.0081 0.0086
b 0.200 0.220 0.240 0.0078 0.0086 0.0094
b1 0.175 0.0068
e 0.400 0.0157
S 0.160 0.180 0.200 0.0062 0.0070 0.0078
D 0.720 0.760 0.800 0.0283 0.0299 0.0314
K 0.040 0.070 0.100 0.0015 0.0027 0.0039
XXX
AK
Mark on Backside of die
D
D
S
e
S
S e S
4x Ø b
S
S
G
D
Note 4
A
A1 A2
Bump Note 2
b
k
e
e
4-Ø 0.205 to 0.225 Note 5
Solder Mask ~Ø 0.215
b1
ECN: T15-0053-Rev. A, 16-Feb-15
DWG: 6033
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Revision: 08-Feb-17 1Document Number: 91000
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