IRF9Z10 Datasheet by Vishay Siliconix

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— VISHAYJ V THE PRODUCT DESCRIBED HERE‘N AND TH‘S DATASHEEF ARE SUBJECT TO SPEC‘F‘C DISCLA‘MERS‘ SET FORTH AT www wshay,com/doc791000
Document Number: 90118 www.vishay.com
S11-0511-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF9Z10, SiHF9Z10
Vishay Siliconix
FEATURES
Dynamic dV/dt Rating
Repetitive Avalanche Rated
• P-Channel
175 °C Operating Temperature
•Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 6.23 mH, Rg = 25 , IAS = - 6.7 A (see fig. 12).
c. ISD - 6.7 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V) - 60
RDS(on) ()V
GS = - 10 V 0.50
Qg (Max.) (nC) 12
Qgs (nC) 3.8
Qgd (nC) 5.1
Configuration Single
S
G
D
P-Channel MOSFET
TO-220AB
GD
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free IRF9Z10PbF
SiHF9Z10-E3
SnPb IRF9Z10
SiHF9Z10
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS - 60 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current VGS at - 10 V TC = 25 °C ID
- 6.7
ATC = 100 °C - 4.7
Pulsed Drain CurrentaIDM - 27
Linear Derating Factor 0.29 W/°C
Single Pulse Avalanche EnergybEAS 140 mJ
Repetitive Avalanche CurrentaIAR - 6.7 A
Repetitive Avalanche EnergyaEAR 4.3 mJ
Maximum Power Dissipation TC = 25 °C PD43 W
Peak Diode Recovery dV/dtcdV/dt - 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Mounting Torque 6-32 or M3 screw 10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
THE PRODUCT DESCRIBED HEREIN AND THTS DATASHEE‘TARE SUBJECT TO SPECTFTC DTSCLAIMEHS, SET FORTH AT www.mshay com/d05791000
www.vishay.com Document Number: 90118
2S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z10, SiHF9Z10
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -62
°C/WCase-to-Sink, Flat, Greased Surface RthCS 0.50 -
Maximum Junction-to-Case (Drain) RthJC -3.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 60 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.060 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 60 V, VGS = 0 V - - - 100 μA
VDS = - 48 V, VGS = 0 V, TJ = 150 °C - - - 500
Drain-Source On-State Resistance RDS(on) V
GS = - 10 V ID = - 4.0 Ab- - 0.50
Forward Transconductance gfs VDS = - 25 V, ID = - 4.0 Ab1.4 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
- 270 -
pFOutput Capacitance Coss - 170 -
Reverse Transfer Capacitance Crss -31-
Total Gate Charge Qg
VGS = - 10 V ID = - 6.7 A, VDS = - 48 V,
see fig. 6 and 13b
--12
nC Gate-Source Charge Qgs --3.8
Gate-Drain Charge Qgd --5.1
Turn-On Delay Time td(on)
VDD = - 30 V, ID = - 6.7 A,
Rg = 24 , RD = 4.0, see fig. 10b
-11-
ns
Rise Time tr -63-
Turn-Off Delay Time td(off) -10-
Fall Time tf -31-
Internal Drain Inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance LS-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current ISMOSFET symbol
showing the
integral reverse
p - n junction diode
--- 6.7
A
Pulsed Diode Forward CurrentaISM --- 27
Body Diode Voltage VSD TJ = 25 °C, IS = - 6.7 A, VGS = 0 Vb--- 5.5
V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/μsb-80160
ns
Body Diode Reverse Recovery Charge Qrr - 0.096 0.19 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G
VISHAYN THE PRODUCT DESCRIBED HERETN AND THTS DATASHEET ARE SUBJECT TO SPECTFTC DISCLATMERS‘ SET FORTH AT www wshay.com/doc791000
Document Number: 90118 www.vishay.com
S11-0511-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z10, SiHF9Z10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 175 ° C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
90118_01
20 µs Pulse Width
TC = 25 °C
- 4.5 V
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
100101
101
100
10-1
Bottom
To p
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
10-1
101
100
10-1
100101
- VDS, Drain-to-Source Voltage (V)
- ID, Drain Current (A)
Bottom
To p
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
20 µs Pulse Width
TC = 175 °C
90118_02
- 4.5 V
10-1
20 µs Pulse Width
VDS = - 25 V
101
100
10-1
- ID, Drain Current (A)
- VGS, Gate-to-Source Voltage (V)
5678910
4
25 °C
175 °C
90118_03
I
D
= - 6.7 A
V
GS
= - 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
TJ, Junction Temperature (°C)
RDS(on), Drain-to-Source On Resistance
(Normalized)
90118_04
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
THE PRODUCT DESCRIBED HEREIN AND TH TS DATASHEET ARE SUBJECT TO SPECTFTC DTSCLAIMERS, SET FORTH AT www.mshay com/doc791000
www.vishay.com Document Number: 90118
4S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z10, SiHF9Z10
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
600
480
360
0
120
240
100101
Capacitance (pF)
- VDS, Drain-to-Source Voltage (V)
Ciss
Crss
Coss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
90118_05
Q
G
, Total Gate Charge (nC)
- V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0315
129
6
V
DS
= - 30 V
For test circuit
see figure 13
V
DS
= - 48 V
90118_06
I
D
= - 6.7 A
101
100
- V
SD
, Source-to-Drain Voltage (V)
- I
SD
, Reverse Drain Current (A)
1.0 5.0
4.03.02.0
25 °C
175 °C
V
GS
= 0 V
90118_07
10-1
6.0
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by RDS(on)
- VDS, Drain-to-Source Voltage (V)
- ID, Drain Current (A)
TC = 25 °C
TJ = 175 °C
Single Pulse
102
2
5
1
2
5
10
2
1510 102
25
90118_08
VISHAYN THE PRODUCT DESCRIBED HERETN AND THTS DATASHEET ARE SUBJECT TO SPECTFTC DISCLATMERS‘ SET FORTH AT www wshay.com/doc791000
Document Number: 90118 www.vishay.com
S11-0511-Rev. B, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z10, SiHF9Z10
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Pulse width 1 µs
Duty factor 0.1 %
R
D
V
GS
R
G
D.U.T.
- 10 V
+
-
V
DS
V
DD
VGS
10 %
90 %
VDS
td(on) trtd(off) tf
10
1
0.1
10-2
10-5 10-4 10-3 10-2 0.1 1 10
PDM
t1
t2
t1, Rectangular Pulse Duration (s)
Thermal Response (ZthJC)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
Single Pulse
(Thermal Response)
D = 0.50
0.20
0.05
0.02
0.01
90118_11
0.10
THE PRODUCT DESCRIBED HEREIN AND TH \S DATASHEET ARE SUBJECT TO SPECTFTC DTSCLAIMERS, SET FORTH AT www.mshay com/d05791000
www.vishay.com Document Number: 90118
6S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z10, SiHF9Z10
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
R
G
I
AS
0.01 Ω
t
p
D.U.T.
L
VDS
+
-V
DD
- 10 V
Vary t
p
to obtain
required I
AS
IAS
VDS
VDD
VDS
tp
500
0
100
200
300
400
Starting TJ, Junction Temperature (°C)
EAS, Single Pulse Energy (mJ)
Bottom
To p
ID
- 2.7 A
- 4.7 A
- 6.7 A
VDD = - 25 V
90118_12c
25 150
125
10075
50 175
QGS QGD
QG
VG
Charge
- 10 V
D.U.T.
- 3 mA
VGS
VDS
IGID
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
VISHAYN 6 (A) S; ‘ www wshax com/ggg (7188 THE PRODUCT DESCRIBED HERETN AND THTS DATASHEETARE SUBJECT TO SPECTFTC DISCLATMERS‘ SET FORTH AT www wshay.com/doc791000
Document Number: 90118 www.vishay.com
S11-0511-Rev. B, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z10, SiHF9Z10
Vishay Siliconix
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90188.
P.W. Period
dI/dt
Diode recovery
dV/dt
Body diode forward drop
Body diode forward
current
Driver gate drive
Inductor current
D = P.W.
Period
+
-
-
-
-
+
+
+
Peak Diode Recovery dV/dt Test Circuit
dV/dt controlled by Rg
D.U.T. - device under test
D.U.T.
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
Rg
Compliment N-Channel of D.U.T. for driver
VDD
ISD controlled by duty factor “D”
Note
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
VGS = - 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
VDD
Re-applied
voltage
Ripple 5 % ISD
Reverse
recovery
current
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Revision: 08-Feb-17 1Document Number: 91000
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