SS8PH9,SS8PH10 Datasheet by Vishay Semiconductor Diodes Division

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SS8PH9, SS8PH10
www.vishay.com Vishay General Semiconductor
Revision: 29-Jan-2019 1Document Number: 88989
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
High Voltage Schottky Rectifier
DESIGN SUPPORT TOOLS
FEATURES
Very low profile - typical height of 1.1 mm
Ideal for automated placement
Guardring for overvoltage protection
High barrier technology, TJ = 175 °C maximum
Low leakage current
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, or
polarity protection application.
MECHANICAL DATA
Case: SMPC (TO-277A)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
IF(AV) 8.0 A
VRRM 90 V, 100 V
IFSM 150 A
EAS 20 mJ
VF at IF = 8.0 A 0.720 V
IR0.18 μA
TJ max. 175 °C
Package SMPC (TO-277A)
Circuit configuration Single
SMPC (TO-277A)
Anode 1
Anode 2Cathode
K
K
2
1
eSMP
® Series
click logo to get started
Available
Models
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SS8PH9 SS8PH10 UNIT
Device marking code 8H9 8H10
Maximum repetitive peak reverse voltage VRRM 90 100 V
Maximum average forward rectified current (fig. 1) IF(AV) 8.0 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 150 A
Non-repetitive avalanche energy
at IAS = 2.0 A, TJ = 25 °C EAS 20 mJ
Operating junction and storage temperature range TJ, TSTG -55 to +175 °C
VISHAY. on:D\odesAmencasmwshaymm DwodesAswafiiwshayxam DwodesEuvopefilvlshayLom www.v\shay,com/doc?91000
SS8PH9, SS8PH10
www.vishay.com Vishay General Semiconductor
Revision: 29-Jan-2019 2Document Number: 88989
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
IF = 4.0 A TA = 25 °C
VF (1)
0.769 -
V
IF = 8.0 A 0.850 0.90
IF = 4.0 A TA = 125 °C 0.634 -
IF = 8.0 A 0.720 0.76
Reverse current Rated VR
TA = 25 °C IR (2) 0.18 2.0 μA
TA = 125 °C 110 300
Typical junction capacitance 4.0 V, 1 MHz CJ140 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER SYMBOL SS8PH9 SS8PH10 UNIT
Typical thermal resistance RJA (1) 65 °C/W
RJL 3
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
SS8PH10-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
SS8PH10-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
SS8PH10HM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel
SS8PH10HM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel
SS8PH10HM3_A/H (1) 0.10 H 1500 7" diameter plastic tape and reel
SS8PH10HM3_A/I (1) 0.10 I 6500 13" diameter plastic tape and reel
VISHAY. on:DwodesAmev\cas@wshay.cam DwodesAswa@v\shay.cam DwodesEuvopefllvlshayxom www.v\shay,com/doc?91000
SS8PH9, SS8PH10
www.vishay.com Vishay General Semiconductor
Revision: 29-Jan-2019 3Document Number: 88989
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
2
1
3
4
5
6
7
8
9
10
100 110 120 130 140 150 160 170 180
Average Forward Current (A)
Lead Temperature (°C)
T
L
measured
at the Cathode Band Terminal
Resistive or Inductive Load
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
D = 0.1
D = 0.2
D = 0.3
D = 0.5 D = 0.8
D = 1.0
Average Forward Current (A)
Average Power Loss (W)
D = t
p
/T t
p
T
0.01
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
T
A
= 175 °C
T
A
= 125 °C
T
A
= 150 °C
T
A
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.001
0.01
0.1
1
10
100
1000
10 000
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
TA = 175 °C
TA = 150 °C
TA = 125 °C
TA = 25 °C
10
100
1000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 0.1 1 10 100
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Ambient
VISHAY. 7?? C \‘—’\ 4 \ LJ on:D\odesAmeHcas@\/Ishay.com DwodesAsIa©vwshay£am DwodesEuvogefilvlshayLom www.v\shay.com/doc?91000
SS8PH9, SS8PH10
www.vishay.com Vishay General Semiconductor
Revision: 29-Jan-2019 4Document Number: 88989
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Conform to JEDEC® TO-277A
SMPC (TO-277A)
0.016 (0.40)
0.006 (0.15)
0.047 (1.20)
0.039 (1.00)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
0.173 (4.40)
0.049 (1.24)
0.037 (0.94)
0.053 (1.35)
0.041 (1.05)
0.030 (0.75) NOM.
0.084 (2.13) NOM.
0.155 (3.94)
NOM.
Mounting Pad Layout
0.268
(6.80)
0.186 (4.72)
MIN.
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
0.189 (4.80)
MIN.
0.187 (4.75)
0.175 (4.45)
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
0.171 (4.35)
0.167 (4.25)
K
2
1
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Revision: 01-Jan-2019 1Document Number: 91000
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