MUN5314DW1, NSBC114YPDxx Datasheet by ON Semiconductor

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This series of digital lra "stors is designed to replace a device and its external re or b' network. The Bias Re Transistor (BRT) ctmmim single liansisior with u monolithic bias network consisting of twt) resistors; a cries base resistor and a basereminer resistor. The BRT eliminates these individual components by imegmling them into a single device. The use otu BRT can reduce both system cost and board space. Fealu res - Simplifies Circuit Design - Reduces Board Space - Reduces Component Count - s and NSV Prefix for Automotive and Other Applicaiitms Requiring Unique site and Control Change Requirements: AECrQlUl Qualified and PPAP Capable' - These Devices are PbrFree, Halogen Free/BFR Free and are RUHS Compliant MAXIMUM RATINGS ('rA : 25°C ooth polarities or (PNP| a 02 (NPNj, unless dtherwrse noted) Ratlng Symbol Max Unlt ColleciotrBase Voltage V050 50 Vde ColleciotrEmlfler Voltage V050 50 Vde Collector Current — Continuous lc too mAdc Input Forward Voltage VWM, 40 Vde Input Reverse Voltage VWEV, s Vde Stresses exceedlng those listed in the Maxlmum Ratings table may damage the devrce, It any ot these time are exceeded deviee tunetlonalrty should not he assumed damage may occur and rellahility may he attested, ORDERING INFORMATION Devlce Package Shippingl MUNSSMDWITlGr so‘r—asa 3,qu / Tape 3. Reel SMUNSBMDWlTlG" NSVMUN5314DW1TSG' so‘r—asa 10,000/Tape & Reel Nssetl AYPDXVGTI e, so‘r—ssa 4,000 /Tape 3. Reel NSVECl t 4VPDXV6T1G“ Nssetl AYPDXVGTSG so‘r—ssa 5,000 /Tape 3. Reel Nssetl AYPDPSTSG so‘r—esa 5,000 /Tape 3. Reel ler lntormatrdn on tape and reel speertrcations, lncludtng part dnentation and tape sizes, please reter to our Tape and Reel Packaglrlg Speelheations Brochure, BRDsml/D, o Semlcunduclurcampunenu luausuras LLC zuls 1 June, 2017 — Rev. 6 0N Semiconductor® Pu
© Semiconductor Components Industries, LLC, 2016
June, 2017 Rev. 6
1Publication Order Number:
DTC114YP/D
MUN5314DW1,
NSBC114YPDXV6,
NSBC114YPDP6
Complementary Bias
Resistor Transistors
R1 = 10 kW, R2 = 47 kW
NPN and PNP Transistors with Monolithic
Bias Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Rating Symbol Max Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current Continuous IC100 mAdc
Input Forward Voltage VIN(fwd) 40 Vdc
Input Reverse Voltage VIN(rev) 6 Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device Package Shipping
MUN5314DW1T1G,
SMUN5314DW1T1G*
SOT363 3,000 / Tape & Reel
NSVMUN5314DW1T3G* SOT363 10,000 / Tape & Reel
NSBC114YPDXV6T1G,
NSVBC114YPDXV6T1G*
SOT563 4,000 / Tape & Reel
NSBC114YPDXV6T5G SOT563 8,000 / Tape & Reel
NSBC114YPDP6T5G SOT963 8,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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MARKING DIAGRAMS
PIN CONNECTIONS
14 M G
1
14/Q = Specific Device Code
M = Date Code*
G= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SOT363
CASE 419B
SOT563
CASE 463A
Q1
Q2
(1)(2)(3)
(6)(5)(4)
R1
R2
R2
R1
SOT963
CASE 527AD
M
1
Q
14 MG
G
1
6
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
MUN5314DW1 (SOT363) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD187
256
1.5
2.0
mW
mW/°C
Thermal Resistance, (Note 1)
Junction to Ambient (Note 2)
RqJA 670
490
°C/W
MUN5314DW1 (SOT363) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C (Note 1)
(Note 2)
Derate above 25°C (Note 1)
(Note 2)
PD250
385
2.0
3.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
(Note 2)
RqJA 493
325
°C/W
Thermal Resistance,
Junction to Lead (Note 1)
(Note 2)
RqJL 188
208
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
NSBC114YPDXV6 (SOT563) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C (Note 1)
PD357
2.9
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
RqJA 350
°C/W
NSBC114YPDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C (Note 1)
Derate above 25°C (Note 1)
PD500
4.0
mW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 1)
RqJA 250
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
NSBC114YPDP6 (SOT963) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C (Note 4)
(Note 5)
Derate above 25°C (Note 4)
(Note 5)
PD231
269
1.9
2.2
MW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 4)
(Note 5)
RqJA 540
464
°C/W
NSBC114YPDP6 (SOT963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25°C (Note 4)
(Note 5)
Derate above 25°C (Note 4)
(Note 5)
PD339
408
2.7
3.3
MW
mW/°C
Thermal Resistance,
Junction to Ambient (Note 4)
(Note 5)
RqJA 369
306
°C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 ×1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR4 @ 500 mm2, 1 oz. copper traces, still air.
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3
ELECTRICAL CHARACTERISTICS (TA=25°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB =50V, I
E=0)
ICBO
100
nAdc
Collector-Emitter Cutoff Current
(VCE =50V, I
B=0)
ICEO
500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC=0)
IEBO
0.2
mAdc
Collector-Base Breakdown Voltage
(IC=10mA, IE=0)
V(BR)CBO 50 − −
Vdc
Collector-Emitter Breakdown Voltage (Note 6)
(IC= 2.0 mA, IB=0)
V(BR)CEO 50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 6)
(IC= 5.0 mA, VCE =10V)
hFE 80 140
Collector-Emitter Saturation Voltage (Note 6)
(IC= 10 mA, IB= 0.3 mA)
VCE(sat)
0.25
V
Input Voltage (Off)
(VCE = 5.0 V, IC= 100 mA) (NPN)
(VCE = 5.0 V, IC= 100 mA) (PNP)
Vi(off)
0.7
0.7
0.3
0.3
Vdc
Input Voltage (On)
(VCE = 0.2 V, IC= 1.0 mA) (NPN)
(VCE = 0.2 V, IC= 1.0 mA) (PNP)
Vi(on) 1.4
1.4
0.8
0.9
Vdc
Output Voltage (On)
(VCC = 5.0 V, VB= 2.5 V, RL= 1.0 kW)
VOL
0.2
Vdc
Output Voltage (Off)
(VCC = 5.0 V, VB= 0.5 V, RL= 1.0 kW)
VOH 4.9 − −
Vdc
Input Resistor R1 7.0 10 13 kW
Resistor Ratio R1/R20.17 0.21 0.25
6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle 2%.
Figure 1. Derating Curve
AMBIENT TEMPERATURE (°C)
12510075502502550
0
50
100
150
200
250
300
PD, POWER DISSIPATION (mW)
150
(1) (2)
(1) SOT363; 1.0 ×1.0 Inch Pad
(2) SOT563; Minimum Pad
(3) SOT963; 100 mm2, 1 oz. Copper Trace
350
400
(3)
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
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4
TYPICAL CHARACTERISTICS NPN TRANSISTOR
MUN5314DW1, NSBC114YPDXV6
1000
100
10
1
Figure 2. VCE(sat) vs. IC
1002030
IC, COLLECTOR CURRENT (mA)
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
01020 50
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.001 01234
Vin, INPUT VOLTAGE (V)
56 78 910
Figure 6. Input Voltage vs. Output Current
VR, REVERSE VOLTAGE (V)
VCE(sat), COLLECTOREMITTER VOLTAGE (V)
IC/IB = 10
55°C
150°C
25°C
hFE, DC CURRENT GAIN
f = 10 kHz
IE = 0 A
TA = 25°C
Cob, OUTPUT CAPACITANCE (pF)
VO = 5 V
150°C
55°C
25°C
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
25°C
1
0.1
0.01
4030 0.1 1 10010
VCE = 10 V
25°C150°C
55°C
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
010 20304050
100
10
1
0.1
150°C
55°C
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
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5
TYPICAL CHARACTERISTICS PNP TRANSISTOR
MUN5314DW1, NSBC114YPDXV6
1000
100
10
1
Figure 7. VCE(sat) vs. IC
1002030
IC, COLLECTOR CURRENT (mA)
40 50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
01020 50
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 10. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.001 01234
Vin, INPUT VOLTAGE (V)
56 7
Figure 11. Input Voltage vs. Output Current
VR, REVERSE VOLTAGE (V)
VCE(sat), COLLECTOREMITTER VOLTAGE (V)
IC/IB = 10
55°C
150°C
25°C
hFE, DC CURRENT GAIN
f = 10 kHz
IE = 0 A
TA = 25°C
Cob, OUTPUT CAPACITANCE (pF)
VO = 5 V
150°C
55°C
25°C
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
25°C
1
0.1
0.01
4030 0.1 1 10010
VCE = 10 V
25°C150°C
55°C
10
010 20304050
100
10
1
0.1
150°C
55°C
9
8
7
6
5
4
3
2
1
0
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
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TYPICAL CHARACTERISTICS NPN TRANSISTOR
NSBC114YPDP6
1000
100
10
1
Figure 12. VCE(sat) vs. IC
1002030
IC, COLLECTOR CURRENT (mA)
40 50
Figure 13. DC Current Gain
Figure 14. Output Capacitance
01020 50
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 15. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.001 01234
Vin, INPUT VOLTAGE (V)
56 7
Figure 16. Input Voltage vs. Output Current
VR, REVERSE VOLTAGE (V)
VCE(sat), COLLECTOREMITTER VOLTAGE (V)
IC/IB = 10
55°C
150°C
25°C
hFE, DC CURRENT GAIN
f = 10 kHz
IE = 0 A
TA = 25°C
Cob, OUTPUT CAPACITANCE (pF)
VO = 5 V
150°C
55°C
25°C
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
25°C
1
0.1
0.01
4030 0.1 1 10010
VCE = 10 V
25°C150°C
55°C
2.4
010 20304050
100
10
1
0.1
150°C
55°C
2
1.6
1.2
0.8
0.4
0
MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
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TYPICAL CHARACTERISTICS PNP TRANSISTOR
NSBC114YPDP6
1000
100
10
1
Figure 17. VCE(sat) vs. IC
1002030
IC, COLLECTOR CURRENT (mA)
40 50
Figure 18. DC Current Gain
Figure 19. Output Capacitance
01020 50
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 20. Output Current vs. Input Voltage
100
10
1
0.1
0.01
0.001 01 2 3 4
Vin, INPUT VOLTAGE (V)
567
Figure 21. Input Voltage vs. Output Current
VR, REVERSE VOLTAGE (V)
VCE(sat), COLLECTOREMITTER VOLTAGE (V)
IC/IB = 10
55°C
150°C
25°C
hFE, DC CURRENT GAIN
f = 10 kHz
IE = 0 A
TA = 25°C
Cob, OUTPUT CAPACITANCE (pF)
VO = 5 V
150°C
55°C
25°C
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (V)
25°C
1
0.1
0.01
4030 0.1 1 10010
VCE = 10 V
25°C150°C
55°C
7
010 20304050
100
10
1
0.1
150°C
55°C
6
5
4
3
2
1
011101112
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MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
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8
PACKAGE DIMENSIONS
SC88/SC706/SOT363
CASE 419B02
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-
SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-
TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
Cddd M
123
A1
A
c
654
E
b
6X DIM MIN NOM MAX
MILLIMETERS
A−−− −−− 1.10
A1 0.00 −−− 0.10
ddd
b0.15 0.20 0.25
C0.08 0.15 0.22
D1.80 2.00 2.20
−−− −−− 0.043
0.000 −−− 0.004
0.006 0.008 0.010
0.003 0.006 0.009
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.10 0.004
E1 1.15 1.25 1.35
e0.65 BSC
L0.26 0.36 0.46
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.078 0.082 0.086
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.65
0.66
6X
DIMENSIONS: MILLIMETERS
0.30
PITCH
2.50
6X
RECOMMENDED
TOP VIEW
SIDE VIEW END VIEW
bbb H
B
SEATING
PLANE
DETAIL A E
A2 0.70 0.90 1.00 0.027 0.035 0.039
L2 0.15 BSC 0.006 BSC
aaa 0.15 0.006
bbb 0.30 0.012
ccc 0.10 0.004
A-B D
aaa C
2X 3 TIPS
D
E1
D
e
A
2X
aaa H D
2X
D
L
PLANE
DETAIL A
H
GAGE
L2
C
ccc C
A2
6X
777+ 7 + "+77 mchez L www.cnsemi.com
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PACKAGE DIMENSIONS
HE
DIM MIN NOM MAX
MILLIMETERS
A0.50 0.55 0.60
b0.17 0.22 0.27
C
D1.50 1.60 1.70
E1.10 1.20 1.30
e0.5 BSC
L0.10 0.20 0.30
1.50 1.60 1.70
0.020 0.021 0.023
0.007 0.009 0.011
0.059 0.062 0.066
0.043 0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN NOM MAX
INCHES
SOT563, 6 LEAD
CASE 463A
ISSUE G
eM
0.08 (0.003) X
b6 5 PL
A
C
X
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
E
Y
12 3
45
L
6
1.35
0.0531
0.5
0.0197
ǒmm
inchesǓ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
0.08 0.12 0.18 0.003 0.005 0.007
6‘54 TT’ 0 23 LIL'ULI |:] rd~
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10
PACKAGE DIMENSIONS
SOT963
CASE 527AD
ISSUE E
DIM MIN NOM MAX
MILLIMETERS
A0.34 0.37 0.40
b0.10 0.15 0.20
C0.07 0.12 0.17
D0.95 1.00 1.05
E0.75 0.80 0.85
e0.35 BSC
0.95 1.00 1.05
HE
E
D
C
A
HE
123
456
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
X
Y
TOP VIEW
SIDE VIEW
e
b
X0.08
6X
Y
BOTTOM VIEW
6X
0.35
PITCH
1.20
0.20
DIMENSIONS: MILLIMETERS
RECOMMENDED
PACKAGE
OUTLINE
MOUNTING FOOTPRINT*
L0.19 REF
L2 0.05 0.10 0.15
L
6X
L2
6X
6X
0.35
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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