VSLY3850 Datasheet by Vishay Semiconductor Opto Division

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VISHAY. ® / / // RoHS cowum mums" FREE GREEN 5.2m- smugmm www.visha .com/doc799912 em\fleflechsuggorl@wshay.com www.v\shay.com/doc?91000
VSLY3850
www.vishay.com Vishay Semiconductors
Rev. 1.4, 14-Jan-16 1Document Number: 82395
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSLY3850 is an
infrared, 850 nm emitting diode based on GaAlAs surface
emitter chip technology with extreme high radiant intensity,
high optical power and high speed, molded in a clear,
untinted T1 plastic package.
FEATURES
Package type: leaded
Package form: T-1, clear epoxy
Dimensions: Ø 3 mm
Peak wavelength: λp = 850 nm
High speed
High radiant power
High radiant intensity
Angle of half intensity: ϕ = ± 18°
Suitable for high pulse current operation
Good spectral matching with CMOS cameras
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Infrared radiation source for operation with CMOS
cameras
High speed IR data transmission
3D TV application
Light curtains
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8636
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSLY3850 70 ± 18 850 10
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSLY3850 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
VSLY3850-ASZ Ammopack MOQ: 10 000 pcs, 2000 pcs/box T-1
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA
Surge forward current tp = 100 μs IFSM 1A
Power dissipation PV190 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +85 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature t 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction / ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W
VISHAY. em\ttertechsupgon@wshay,com www.v\shay,com/doc?91000
VSLY3850
www.vishay.com Vishay Semiconductors
Rev. 1.4, 14-Jan-16 2Document Number: 82395
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0 10 20 30 40 50 60 70 80 90 100
22322
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA = 300 K/W
0
20
40
60
80
100
120
0 102030405060708090100
22323
RthJA = 300 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF- 1.65 1.9 V
IF = 1 A, tp = 100 μs VF-2.9- V
Temperature coefficient of VF
IF = 1 mA TKVF - -1.45 - mV/K
IF = 10 mA TKVF - -1.25 - mV/K
Reverse current IRNot designed for reverse operation μA
Junction capacitance VR = 0 V, f = 1 MHz,
E = 0 mW/cm2CJ- 125 - pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie35 70 105 mW/sr
IF = 1 A, tp = 100 μs Ie- 600 - mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe-55-mW
Temperature coefficient of radiant
power IF = 1 mA TKϕe- -0.35 - %/K
Angle of half intensity ϕ 18- deg
Peak wavelength IF = 30 mA λp840 850 870 nm
Spectral bandwidth IF = 30 mA Δλ -30-nm
Temperature coefficient of lpIF = 30 mA TKλp-0.25- nm
Rise time IF = 100 mA, 20 % to 80 % tr-10-ns
Fall time IF = 100 mA, 20 % to 80 % tf-10-ns
VISHAY. em\ttertechsupgon@wshay,com www.v\shay,com/doc?91000
VSLY3850
www.vishay.com Vishay Semiconductors
Rev. 1.4, 14-Jan-16 3Document Number: 82395
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Pulse Forward Current vs. Pulse Duration
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
V
F
- Forward Voltage (V)
22097
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5 3 3.5
tp = 100 µs
100
1000
0.01 0.1 1 10 100
tp - Pulse Duration (ms)
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
IF - Forward Current (mA)
IF - Forward Current (A)
21951
Ie - Radiant Intensity (mW/sr)
0.1
1
10
100
1000
0.001 0.01 0.1 1
tp = 100 µs
0.1
1
10
100
1000
11 0 100 1000
16971
I
F
- Forward Current (mA)
- Radiant Power (mW)
e
λ - Wavelength (nm)
21776-1
Φe, rel - Relative Radiant Power
0
0.25
0.5
0.75
1
650 750 850 950
I
F
= 30 mA
21355 0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
0
0.2
0.4
Ie rel - Relative Radiant Intensity
ϕ - Angular Displacement
VISHAY. T em\ttertechsuggorl@wshay.com www.v\shay.com/doc?91000
VSLY3850
www.vishay.com Vishay Semiconductors
Rev. 1.4, 14-Jan-16 4Document Number: 82395
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
Drawing-No.: 6.544-5264.01-4
Issue: 4; 28.07.14
technical drawings
according to DIN
specifications
3.2 ± 0.15
AC
< 0.6
3.4 ± 0.15
4.4 ± 0.3
5.8 ± 0.3
34.4 ± 0.5
1.5 ± 0.5
2.54 nom.
(2.5)
0.5
+ 0.2
- 0.1
Ø 2.9 ± 0.1
AREA NOT PLANE
R1.4 (sphere)
0.4
+ 0.15
- 0.05
— VISHAY. V
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Revision: 01-Jan-2021 1Document Number: 91000
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