RTR025N03 Datasheet by Rohm Semiconductor

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ROHII'I (1) Gate (2) Source (1) (3) Dram w *1 ESD Protecmn Diode ‘2 Body mode
RTR025N03
  Nch 30V 2.5A Middle Power MOSFET    Datasheet
llOutline
VDSS 30V SOT-346T
 
RDS(on)(Max.) 92 SC-96
ID±2.5A TSMT3
PD1.0W  
      
llInner circuit
llFeatures
1) Low on-resistance
2) Space saving small surface mount package
  (TSMT3)
3) Low voltage drive(2.5V drive)
llPackaging specifications
Type
Packing Embossed
Tape
Reel size (mm) 180
llApplication Tape width (mm) 8
Switching Basic ordering unit (pcs) 3000
Taping code TL
Marking QZ
llAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter Symbol Value Unit
Drain - Source voltage VDSS 30 V
Continuous drain current ID±2.5 A
Pulsed drain current IDP*1 ±10 A
Gate - Source voltage VGSS 12 V
Power dissipation PD*2 1.0 W
PD*3 0.76 W
Junction temperature Tj150
Operating junction and storage temperature range Tstg -55 to +150
                                              
                                              
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© 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150918 - Rev.001      
RTR025N03                            Datasheet
llThermal resistance                                    
Parameter Symbol Values Unit
Min. Typ. Max.
Thermal resistance, junction - ambient
RthJA
*2 - - 125 /W
RthJA
*3 - - 165 /W
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Drain - Source breakdown
voltage V(BR)DSS VGS = 0V, ID = 1mA 30 - - V
Breakdown voltage
temperature coefficient
 
ΔV(BR)DSS
 
ID = 1mA - 29.0 - mV/
 
 ΔTj    referenced to 25
Zero gate voltage
drain current IDSS VDS = 30V, VGS = 0V - - 1 μA
Gate - Source leakage current IGSS VGS = 12V, VDS = 0V - - 10 μA
Gate threshold voltage VGS(th) VDS = 10V, ID = 1mA 0.5 - 1.5 V
Gate threshold voltage
temperature coefficient
 ΔVGS(th)  
ID = 1mA - -1.6 - mV/
 
 ΔTj    referenced to 25
Static drain - source
on - state resistance RDS(on)*4
VGS = 4.5V, ID = 2.5A - 66 92
VGS = 4.0V, ID = 2.5A - 70 98
VGS = 2.5V, ID = 2.5A - 95 133
Gate resistance RG f = 1MHz, open drain - 9 - Ω
Forward Transfer
Admittance |Yfs|*4 VDS = 10V, ID = 2.5A 2.0 - - S
*1 Pw10μs, Duty cycle1%
*2 Mounted on a ceramic board (30x30x0.8mm)
*3 Mounted on a FR4 (25x25x0.8mm)
*4 Pulsed
                                                                                           
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RTR025N03                 Datasheet
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Input capacitance Ciss VGS = 0V - 220 -
pFOutput capacitance Coss VDS = 10V - 60 -
Reverse transfer capacitance Crss f = 1MHz - 35 -
Turn - on delay time td(on)*4 VDD 15V,VGS = 4.5V - 9 -
ns
Rise time tr*4 ID = 1.25A - 15 -
Turn - off delay time td(off)*4 RL 12Ω - 25 -
Fall time tf*4 RG = 10Ω - 10 -
llGate charge characteristics (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Total gate charge Qg*4
VDD 15V,
ID = 2.5A,
VGS = 4.5V
- 3.3 4.6
nCGate - Source charge Qgs*4 - 0.7 -
Gate - Drain charge Qgd*4 - 1.0 -
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
Continuous forward current IS
Ta = 25
- - 0.8 A
Pulse forward current ISP*1 - - 10 A
Forward voltage VSD*4 VGS = 0V, IS = 0.8A - - 1.2 V
                                               
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© 2015 ROHM Co., Ltd. All rights reserved. 3/11 20150918 - Rev.001
120 100 Operation in this area a3 is limited by RDs(on) T‘ 100 ( VGS = 4 5v ) a: E T 10 cf“ 50 T: I T “L E E 60 E 1 .g ‘5 g (2 DC Opslafion a 40 E " o e 0 1 “=25 “c g 20 Single Pulse & Mounted on a savanna board (30mm x 30mm x 0 8mm) 0 0.01 0 50 100 150 200 0‘1 1 10 100 Junction Temperature : T, [“0] Drain - Source Volkage : VDs [V] 9 10 10000 a). T, = 25“c g Single Pu‘se '“ E E v n‘”; 1 EL 1000 n: L E Duty cycle a: E top D=1 5 n) D. :5 01 E 100 ‘E ‘E ‘2 = w E g bollom Signle I— _ x L; 0‘01 Rmu.a)=125“c/w $ 1° g] - Rmu-a)(t)=r(t)x qu-a) “- 'l—T, Mounted on ceramic board E (30mm x 30mm x 08mm) 2° 0 001 1 00001 0.01 1 100 0.0001 001 1 100 Pulse Width : Pw [5] Pulse Width : Pw [s]
RTR025N03                 Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
    Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
    dissipation
                                                
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Drain Currenl : ID [A] Normarize Drain - Source Breakdown Voltage 3 VKHRJDss [V] m o 2.5 l 1 525°C Pulsed 2 1 .5 v95: 1.5V 1 /._—— / 0.5 v65: 1 2v 0 l l 60 40 0 0.1 02 0.3 0.4 0.5 0.6 07 0.8 09 Drain - Source Voltage : V55 [V] 1 vGs = ov ID = 1 mA pulsed ##- 750 0 50 1 00 Junction Temperature : T‘ [”C] 150 Drain Currenl : ID [A] Drain Currenl : ID [A] 2 5 ‘ I: / T,:25°c 2 AVGS: 2 5 Pulsed . vGS zov _ v55: ‘ 5V V“, 1.5V 1.5 1 o 5 v55: 1.2V 0 l 012345678910 Drain - Source Voltage : VDS [V] 10 01 0.01 0 001 0020405031 12141618 2 Gate - Source Voltage : Ves [V]
RTR025N03                 Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
     Junction Temperature
Fig.8 Typical Transfer Characteristics
                                                
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Gate Threshold Voltage : V633") [V] ID/ID max. [%] Drain Current Dissipation : 750 120 100 80 60 40 20 0 VDS=1DV iD=1mA ’pulsed \ \ \\ o so 100 150 Junction Temperature : T, [“C] »25 o 25 50 75 100 125 150 Junction Temperature : T1 [”0] Static Drain - Source Orr-Slate Resistance Forward Transter Admittance : |V¢s| [S] 100 01 180 160 140 120 i RDS(on) [m0] 8 <7) o="" 20="" 10="" 001="" 01="" 1="" vds="10v" pulsed="" 10="" 100="" drain="" current:="" id="" [a]="" tz="25" c"="" puised="" ’="" |d="2.5A" 125a="" 0="" 1="" 2="" 3="" 4="" 5="" s="" 7="" 6="" 9="" 10="" gate="" -="" source="" voltage="" :="" v65="" m="">
RTR025N03                 Datasheet
llElectrical characteristic curves
Fig.9 Gate Threshold Voltage vs.
     Junction Temperature
Fig.10 Forward Transfer Admittance vs.
     Drain Current
Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State
   Resistance vs. Gate Source Voltage
                                                
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© 2015 ROHM Co., Ltd. All rights reserved. 6/11 20150918 - Rev.001
Static Drain - Source Orr-Slate Resistance 1 Rnstm) [m0] 110 105 100 95 90 BS 80 75 70 65 60 55 50 45 40 35 750 725 D 25 50 75 100125 Junction Temperature : 1] [°C] ‘50 Static Drain - Source Orr-Slate Resistance 3 RDs(an) [m0] 1000 100 10 0.01 0 1 1 Drain Current: In [A] 10
RTR025N03                 Datasheet
llElectrical characteristic curves
Fig.13 Static Drain - Source On - State
   Resistance vs. Junction Temperature
Fig.14 Static Drain - Source On - State
     Resistance vs. Drain Current (I)
                                                
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© 2015 ROHM Co., Ltd. All rights reserved. 7/11 20150918 - Rev.001
Static Drain - Source Orr-Slate Resistance Static Drain - Source Orr-Slate Resistance : Row", [m0] : Row", [m0] 1000 T5 125%: T; 75°C T = 25°C a= , 25°C 100 10 1 0.01 0.1 1 10 Drain Current: In [A] 1000 Ti: 125°C Tl= 75“c T3: 25“c 1,: - 25°C 100 10 1 o 01 0‘1 1 10 Drain Current: In [A] Static Drain - Source Orr-Slate Resistance 1 000 : Row", [m0] 10 0,01 0 1 1 Drain Current: ID [A] 10
RTR025N03                 Datasheet
llElectrical characteristic curves
Fig.15 Static Drain - Source On - State
     Resistance vs. Drain Current (II)
Fig.16 Static Drain - Source On - State
     Resistance vs. Drain Current (IlI)
Fig.17 Static Drain - Source On - State
     Resistance vs. Drain Current (IV)
                                                
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© 2015 ROHM Co., Ltd. All rights reserved. 8/11 20150918 - Rev.001
Capacitance : C [pF] Gate - Source Voltage : V55 [V] 1000 1000 7 .E. 100 .. 100 n) .E ,_ U) c E 10 g H) 3 tn 1 1 um 01 1 10 101] 001 0'1 1 1o Drain - Source Voltage : VDSM Drain Current: ID [A] 5 1 1 1o Ti=25”c VDD=15V 4 7 19:25A g Pulsed 7 :- 1 3 5 S o 2 5 g 01 to 1 o 001 u 05 1 1.5 2 2'5 3 3.5 4 o 0.1 0.2 013 0.4 0.5 as 0.7 0.5 0,9 1 Total Gate Charge : Qg [nC] Source - Drain Voltage : VSD [V]
RTR025N03                 Datasheet
llElectrical characteristic curves
Fig.18 Typical Capacitance vs.
      Drain - Source Voltage
Fig.19 Switching Characteristics
Fig.20 Dynamic Input Characteristics Fig.21 Source Current vs.
      Source Drain Voltage
                                                
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© 2015 ROHM Co., Ltd. All rights reserved. 9/11 20150918 - Rev.001
Pmse wldth Ves Vus D. U .T, V Re DD 90% 90% M“; 1, [mm '1 an fl V55 Va: 01 V55 lemma 4» D,U.T. Qua 0“ Vun Charge
RTR025N03                             Datasheet
llMeasurement circuits
Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT Fig. 1-2 SWITCHING WAVEFORMS
Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT Fig. 2-2 GATE CHARGE WAVEFORM
                                                                                           
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© 2015 ROHM Co., Ltd. All rights reserved. 10/11 20150918 - Rev.001
SOT-346T 30-96 ( TSMTS ) *7, T 2 _ w v b2 Pattern of terminal position areas [Not a panern of soldermg pads] DIM MILIMETERS INCHES MIN MAX MIN MAX A - 1 00 - 0.039 A1 000 0 10 0,000 0004 A2 0.75 095 0.030 0.037 A3 0.25 0.010 b 0.35 050 0.014 0.020 0 0,10 020 0,004 0.010 D 200 300 0,110 0.110 E 1.50 180 0,059 0,071 e 0.95 0037 HE 260 a 00 0,102 0,118 LI 030 060 0012 0024 Lu 0,40 0 70 0,016 0,020 0 0,05 025 0,002 0,010 x - 0 20 - 0 008 DIM MILIMETERS INCHES MIN MAX MIN MAX b2 0 7o , 0028 21 2.10 0.083 n , | 090 , | o 035 Dimension in mm/inches
RTR025N03                           Datasheet
llDimensions
                                               
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© 2015 ROHM Co., Ltd. All rights reserved. 11/11 20150918 - Rev.001
Datasheet
Datasheet
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© 2015 ROHM Co., Ltd. All rights reserved.
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CLASS CLASS CLASSb CLASS
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For details, please refer to ROHM Mounting specification
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