NCV8403A,B Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2016
November, 2019 Rev. 13
1Publication Order Number:
NCV8403/D
NCV8403A, NCV8403B
Self-Protected Low Side
Driver with Temperature
and Current Limit
42 V, 14 A, Single NChannel, SOT223
NCV8403A/B is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
Features
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Over Voltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial
Drain
Source
Temperature
Limit
Gate
Input
Current
Limit
Current
Sense
Overvoltage
Protection
ESD Protection
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VDSS
(Clamped) RDS(on) TYP ID MAX
(Limited)
42 V 53 mW @ 10 V 15 A
SOT223
CASE 318E
STYLE 3
MARKING
DIAGRAM
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = 8403A or 8403B
G or G= PbFree Package
1
(Note: Microdot may be in either location)
1
AYW
VxxxxxG
G
23
4
GATE
DRAIN
SOURCE
DRAIN
23
4
12
3
4
DPAK
CASE 369C
YWW
NCV
xxxxxG
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
1
2
3
GATE
DRAIN
SOURCE
m o m .m e s n o. w w w
NCV8403A, NCV8403B
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
DraintoSource Voltage Internally Clamped VDSS 42 Vdc
GatetoSource Voltage VGS "14 Vdc
Drain Current Continuous IDInternally Limited
Total Power Dissipation SOT223 Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Total Power Dissipation DPAK Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD1.13
1.56
1.32
2.5
W
Thermal Resistance SOT223 Version
JunctiontoSoldering Point
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
Thermal Resistance DPAK Version
JunctiontoSoldering Point
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RqJS
RqJA
RqJA
RqJS
RqJA
RqJA
12
110
80
2.5
95
50
°C/W
Single Pulse Inductive Load Switching Energy
(VDD = 25 Vdc, VGS = 5.0 V, IL = 2.8 A, L = 120 mH, RG = 25 W)
EAS 470 mJ
Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 4.5 W, td = 400 ms) VLD 55 V
Operating Junction Temperature TJ40 to 150 °C
Storage Temperature Tstg 55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface mounted onto minimum pad size (0.412 square) FR4 PCB, 1 oz cu.
2. Mounted onto 1 square pad size (1.127 square) FR4 PCB, 1 oz cu.
DRAIN
SOURCE
GATE VDS
VGS
ID
IG
+
+
Figure 1. Voltage and Current Convention
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NCV8403A, NCV8403B
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3
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = 40°C to 150°C) (Note 3)
V(BR)DSS 42
40
46
45
51
51
Vdc
Vdc
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 3)
IDSS
0.6
2.5
5.0
mAdc
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
IGSS 50 125 mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th) 1.0
1.7
5.0
2.2
Vdc
mV/°C
Static DraintoSource OnResistance (Note 4)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3)
RDS(on)
53
95
68
123
mW
Static DraintoSource OnResistance (Note 4)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3)
RDS(on)
63
105
76
135
mW
SourceDrain Forward On Voltage
(IS = 7.0 A, VGS = 0 V)
VSD 0.95 1.1 V
SWITCHING CHARACTERISTICS (Note 3)
TurnON Time (10% VIN to 90% ID)VIN = 0 V to 5 V, VDD = 25 V
ID = 1.0 A, Ext RG = 2.5 W
tON 44 msms
TurnOFF Time (90% VIN to 10% ID) tOFF 84
TurnON Time (10% VIN to 90% ID)VIN = 0 V to 10 V, VDD = 25 V,
ID = 1.0 A, Ext RG = 2.5 W
tON 15
TurnOFF Time (90% VIN to 10% ID) tOFF 116
SlewRate ON (20% VDS to 50% VDS)Vin = 0 to 10 V, VDD = 12 V,
RL = 4.7 W
dVDS/dtON 2.43 V/ms
SlewRate OFF (80% VDS to 50% VDS) dVDS/dtOFF 0.83
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit VGS = 5.0 V, VDS = 10 V
VGS = 5.0 V, TJ = 150°C (Note 3)
ILIM 10
5.0
15
10
20
15
Adc
Current Limit VGS = 10 V, VDS = 10 V
VGS = 10 V, TJ = 150°C (Note 3)
ILIM 12
8.0
17
13
22
18
Adc
Temperature Limit (Turnoff) VGS = 5.0 Vdc (Note 3) TLIM(off) 150 175 200 °C
Thermal Hysteresis VGS = 5.0 Vdc DTLIM(on) 15 °C
Temperature Limit (Turnoff) VGS = 10 Vdc (Note 3) TLIM(off) 150 165 185 °C
Thermal Hysteresis VGS = 10 Vdc DTLIM(on) 15 °C
GATE INPUT CHARACTERISTICS (Note 3)
Device ON Gate Input Current VGS = 5 V ID = 1.0 A IGON 50 mA
VGS = 10 V ID = 1.0 A 400
Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL 0.1 mA
VGS = 10 V, VDS = 10 V 0.6
Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V IGTL 0.45 mA
VGS = 10 V, VDS = 10 V 1.5
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 3)
ElectroStatic Discharge Capability Human Body Model (HBM) ESD 4000 V
ElectroStatic Discharge Capability Machine Model (MM) ESD 400 V
3. Not subject to production testing.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
Tm“ : 150%: ‘ am: A) 9! C 1 00°C 1 50°C \\‘
NCV8403A, NCV8403B
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4
TYPICAL PERFORMANCE CURVES
Figure 2. Single Pulse Maximum Switchoff
Current vs. Load Inductance
Figure 3. SinglePulse Maximum Switching
Energy vs. Load Inductance
L (mH) L (mH)
10010
1
10
10010
100
1000
Figure 4. Single Pulse Maximum Inductive
Switchoff Current vs. Time in Clamp
Figure 5. SinglePulse Maximum Inductive
Switching Energy vs. Time in Clamp
TIME IN CLAMP (ms) TIME IN CLAMP (ms)
101
1
10
100
101
100
1000
ILmax (A)
Emax (mJ)
ILmax (A)
Emax (mJ)
TJstart = 25°C
TJstart = 150°C
TJstart = 25°C
TJstart = 150°C
TJstart = 25°C
TJstart = 150°C
TJstart = 25°C
TJstart = 150°C
150°C
VDS (V) VGS (V)
543210
0
5
10
20
25
4.03.53.02.52.01.51.0
0
5
10
15
20
ID (A)
ID (A)
15
VGS = 2.5 V
3 V
4 V
5 V
6 V 7 V 8 V 9 V
10 V
40°C
25°C
100°C
Figure 6. Onstate Output Characteristics Figure 7. Transfer Characteristics
Ta = 25°C
VDS = 10 V
010, Ves : 5 V 150) m0, V55 : 10 v _ 100%; v65 : 5 v 100°C v : 10 V 100°C _‘ _ \\ \\ 25°C \ -40§C\\ \
NCV8403A, NCV8403B
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5
TYPICAL PERFORMANCE CURVES
Figure 8. RDS(on) vs. GateSource Voltage Figure 9. RDS(on) vs. Drain Current
VGS (V) ID (A)
RDS(on) (mW)
RDS(on) (mW)
40°C
25°C
100°C
150°C
40°C, VGS = 5 V
40°C, VGS = 10 V
25°C, VGS = 5 V
25°C, VGS = 10 V
100°C, VGS = 5 V
100°C, VGS = 10 V
150°C, VGS = 5 V
Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. GateSource
Voltage
T (°C) VGS (V)
12010080402002040
0.50
0.75
1.00
1.25
1.50
1.75
2.00
NORMALIZED RDS(on)
ILIM (A)
60
40°C
25°C
100°C
140
VGS = 5 V
VGS = 10 V
25
50
75
100
125
150
345678910
20
30
50
60
70
80
90
100
13 5 7 9
150°C, VGS = 10 V
0
10
15
20
25
56 78 910
150°C
ID = 3 A
246810
40
ID = 5 A
VDS = 10 V
5
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. DraintoSource Leakage Current
TJ (°C) VDS (V)
40353025201510
0.00001
0.001
0.01
0.1
1
10
100
ILIM (A)
IDSS (mA)
40°C
25°C
100°C
150°C
0
10
15
20
25
40 20 0 20 40 60 80 100 120 140
VGS = 5 V
VGS = 10 V
VDS = 10 V VGS = 0 V
0.0001
5
\ \ 40L: // //’ \ ’ ' / \ /// \ 25%: // // / \ // / 30/ / / \ 4 / Ram» Ves "‘ ‘~'_7_T_- VDs duom www.cnsemi.com
NCV8403A, NCV8403B
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6
TYPICAL PERFORMANCE CURVES
Figure 14. Normalized Threshold Voltage vs.
Temperature
Figure 15. SourceDrain Diode Forward
Characteristics
T (°C) IS (A)
14010060402002040
0.6
0.7
0.8
0.9
1.0
1.1
1.2
87654321
0.5
0.6
0.7
0.8
0.9
1.0
NORMALIZED VGS(th) (V)
VSD (V)
80 120 910
40°C
25°C
100°C
150°C
Figure 16. Resistive Load Switching Time vs.
GateSource Voltage
Figure 17. Resistive Load Switching
DrainSource Voltage Slope vs. GateSource
Voltage
VGS (V) VGS (V)
109876543
0
50
100
150
250
109876543
0
0.5
1.0
1.5
3.0
TIME (ms)
DRAINSOURCE VOLTAGE SLOPE (V/ms)
td(off)
td(on)
tf
tr
dVDS/dt(on)
dVDS/dt(off)
ID = 1.2 mA
VDS = VGS
200
VGS = 0 V
VDD = 25 V
ID = 5 A
RG = 0 W
2.0
2.5
VDD = 25 V
ID = 5 A
RG = 0 W
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
Figure 19. DrainSource Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
RG (W)R
G (W)
2000150010005000
0
25
50
75
100
2000150010005000
0.50
0.75
1.00
1.25
2.00
2.50
TIME (ms)
DRAINSOURCE VOLTAGE SLOPE (V/ms)
td(on), VGS = 5 V
td(off), VGS = 5 V
tr, VGS = 5 V
tf, VGS = 5 V
td(on), VGS = 10 V
td(off), VGS = 10 V
tr, VGS = 10 V
tf, VGS = 10 V
1.50
1.75
2.25
dVDS/dt(on), VGS = 5 V
dVDS/dt(off), VGS = 5 V
dVDS/dt(on), VGS = 10 V
dVDS/dt(off), VGS = 10 V
VDD = 25 V
ID = 5 A
VDD = 25 V
ID = 5 A
\\ PCB C
NCV8403A, NCV8403B
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7
TYPICAL PERFORMANCE CURVES
0.01
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
R(t) °C/W
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
0.000001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
R(t) °C/W
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
0.000001
COPPER HEAT SPREADER AREA (mm2)
RqJA (°C/W)
PCB Cu thickness, 1.0 oz
25
50
75
100
125
150
300 400 500 600 700 800
Figure 20. RqJA vs. Copper Area SOT223
0 100 200
PCB Cu thickness, 2.0 oz
COPPER HEAT SPREADER AREA (mm2)
RqJA (°C/W)
PCB Cu thickness, 1.0 oz
25
50
75
100
125
150
300 400 500 600 700 800
Figure 21. RqJA vs. Copper Area DPAK
0 100 200
PCB Cu thickness, 2.0 oz
Figure 22. Transient Thermal Resistance SOT223 Version
Figure 23. Transient Thermal Resistance DPAK Version
RL VIN Figure 24. Resistive Load Switching Test Circuit VIN IDS Figure 25. Resistive Load Switching Waveforms www.cnsemi.com a
NCV8403A, NCV8403B
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8
TEST CIRCUITS AND WAVEFORMS
DUT
G
D
S
RL
VDD
IDS
VIN
Figure 24. Resistive Load Switching Test Circuit
RG
+
Figure 25. Resistive Load Switching Waveforms
tON
VIN
IDS
tOFF
10%
10%
90%
90%
G DUT VDD E —o IDS Figure 26. Inductive Load Switching Tesl Circuit www.cnsemi.com s
NCV8403A, NCV8403B
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9
TEST CIRCUITS AND WAVEFORMS
VDD
IDS
VIN
L
VDS
tp
Figure 26. Inductive Load Switching Test Circuit
DUT
G
D
S
RG +
0 V
5 V
Tav
VIN
IDS
VDS
Tp
VDS(on)
Ipk
0
VDD
V(BR)DSS
Figure 27. Inductive Load Switching Waveforms
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10
ORDERING INFORMATION
Device Package Shipping
NCV8403ASTT1G SOT223
(PbFree)
1000 / Tape & Reel
NCV8403ASTT3G SOT223
(PbFree)
4000 / Tape & Reel
NCV8403ADTRKG DPAK
(PbFree)
2500 / Tape & Reel
NCV8403BDTRKG DPAK
(PbFree)
2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 4 DPAK (SINGLE GAUGE) CASE 3690 u ISSUE F I 2 3 SCALE I:I VIZ! «a» A I ‘H E: uJr 4‘ g z ‘ aka I Lama \ H '? 0N Semiwndudw" DATE 21 JUL 2015 NOTES I DIMENSIONINO AND IOLERANCING PER ASME w 5M I990 2 CONIROLLING DIMENSION INCHES a THERMAL FAD CONTOUR OPTIONAL WITHIN DIE MENSIONS I73. L3 and z 4 DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. PROTRUSIONS 0R BURRS MOLD FLASH. PROTRUSIONS 0R GATE EURRS SHALL NOT ExCEED D DDS INCHES FER SIDE S DIMENSIONS D AND E ARE DELERNINED AT LHE OUTERMOST EXTREMES OF THE PLASTIC DODv 5 DATuMS A AND a ARE DETERMINED AT DALDN PLANE H III I [ I 7 OPTIONAL MOLD FEAIURE L4 I "am \ 2 , wanes MILLIMEYERS J um MIN MAX um max b2 C BOTTOM VIEW A 0036 0096 218 233 SIDEVIEW A1 0an nuns use me a b u nuzs Inns Us: 059 I22 naza mus m2 IN 'rOPVIew-l”""15(°-‘3l® I I I2: man DZIS m 5.5 L a new GL2» me m an new GL2» me am I Z I z e 0235 Data 597 s22 , E nzsn nzss 535 673 f f e unease 229350 L2 Sm“: SEATING ‘ I H Dam Ium 9w Ium { PLANE W H” L mass Innm IMII I73 , LI DmAEE 2eGnEE L2 nnzaasc 051 ago I t M BOTTOM VIEW L: was ease nae I27 L” COLLIEIIAIEIS 3‘ 0;; “3?? 3;; 1‘33 DETAILA RO'IA‘IEDW cw GENERIC MARKING DIAGRAM‘ STVLEI SIVLE 2 SWLE 3 SIVLE 4 SIVLE s PIN] BASE PINI GALE PIN] ANGGE FINI CATHODE PINI GALE (fl 2 COLLECTOR 2 DRAIN 2 CATHODE 2 ANODE 2 ANODE a EMILLEA 3 SOURCE a ANGGE 3 GALE 3 CATHODE E: A COLLECTOR 4 DRAIN A cATHoDE 4 ANODE 4 ANODE XXXXXXG AYWW ALYWW I: xxx SWLE a SIVLE 7 STVLE a sme e SIVLE ID xxxxxe PIN] MTI FINI GALE PINI NIC PINI ANODE FINI CATHODE U E: z 2 MT2 2 COLLECTOR 2 CAIHODE 2 CAIHODE 2 ANODE a GALE 3 EMITTER a ANODE a RESISIORADJUST 3 GALHouE A MT2 4 COLLECTOR 4 CAIHODE o CAIHODE 4 ANODE IC Dlscrele SOLDERING FOOTPRINT“ xxxxxx e Dame Code 620 A : Assemny LocaIIGn k If 4, w L : WaIeL La 0244 one y e V 2.53 E 93' a T ‘02 ww : Work Week I E e e Ph-Free Package w ‘ThIs InIGnnaIIGn Is generIC. PIease LeIeL m ‘ 6“ 5 ‘7 Lo deVICe daIa sheet IGL actual pan $ 0.063 0.243 marking SCALE 3 I (fl) ~FGL addmonal InIGLmaLIon on our Pb-Free 51TaIegy and soldeIIng deIaIISI pIease download me ON Semlconduclol Soldering and Moummg Techanues HeIeLenee Manual, SDLDERRM/D. ON SemIcunduclm and are hademavks eI SemIcanchlur Campenema lndusllles. LLC dba oN SemLeanGueLaL Dr IKS suhsIdIarIes In Lne DnLLeu SLaLes andJnl mhev aeunInes ON SemIcunchlar Iesewes Lne "gm LG make changes wunqu IunneL nenee LG any pruduns neqeLn ON Semenduc‘nv makes nu wananIy. represenlalmn GI guarantee regardmg Ine suIIahIIIly GI Ls manual: IuL any pamauIaL purpase nnv dues ON SEmIcunduclm assume any ILaInILIy vasIng queI Lne applIcs‘IarI G. use GI any pmdudnv clrcufl and SpEcIlIcslIy ALseIaLms any and an ILaILLILIy IncIudIng WLInauI ILnuIaILGn speeLaI eanaeauenILaI G. anGenIaI damages oN SemImnduchr dues nnl eenyey any IIcense under LIs paIenI ngnua naL Lne ngnIs OI eIneLs
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
DATE 21 JUL 2015
SCALE 1:1
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
12
3
4
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. RESISTOR ADJUST
4. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. ANODE
b
D
E
b3
L3
L4
b2
M
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.028 0.045 0.72 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
12 3
4
XXXXXX = Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week
G = PbFree Package
AYWW
XXX
XXXXXG
XXXXXXG
ALYWW
DiscreteIC
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer
to device data sheet for actual part
marking.
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.114 REF 2.90 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
e
BOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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