P6SMB6.8AT3G, SZP6SMB6.8AT3G Series Datasheet by Littelfuse Inc.

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© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 14 1Publication Order Number:
P6SMB6.8AT3/D
P6SMB6.8AT3G Series,
SZP6SMB6.8AT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductors exclusive, cost-effective, highly reliable
SURMETIC® package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
Specification Features:
Working Peak Reverse Voltage Range − 5.8 to 171 V
Standard Zener Breakdown Voltage Range − 6.8 to 200 V
Peak Power − 600 W @ 1 ms
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
*Please see P6SMB11CAT3 to P6SMB91CAT3 for Bidirectional devices.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.8−171 VOLTS
600 WATT PEAK POWER
Cathode Anode
Device Package Shipping
ORDERING INFORMATION
SMB
CASE 403A
PLASTIC
P6SMBxxxAT3G SMB
(Pb−Free)
2,500 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
A = Assembly Location
Y = Year
WW = Work Week
xx = Device Code (Refer to page 3)
G= Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
www.onsemi.com
AYWW
xx G
G
SZP6SMBxxxAT3G SMB
(Pb−Free)
2,500 /
Tape & Reel
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VCVBR VF
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms PPK 600 W
DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
PD
RqJL
3.0
40
25
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
PD
RqJA
0.55
4.4
226
W
mW/°C
°C/W
Forward Surge Current (Note 4) @ TA = 25°C IFSM 100 A
Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. 10 X 1000 ms, non−repetitive
2. 1 square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF
(Note 4) = 30 A, VF = 1.3 V Max. @ IF (Note 4) = 3 A) (Note 5)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
QVBR Maximum Temperature Coefficient of VBR
IFForward Current
VFForward Voltage @ IF
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive
duty cycle
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS
Device*
Device
Marking
VRWM
(Note 6
)
IR @
VRWM
Breakdown Voltage VC @ IPP (Note 8)
QVBR
Ctyp
(Note 9)
VBR V (Note 7) @ ITVCIPP
VmAMin Nom Max mA V A %/°C pF
P6SMB6.8AT3G
P6SMB7.5AT3G
P6SMB8.2AT3G
P6SMB9.1AT3G
6V8A
7V5A
8V2A
9V1A
5.8
6.4
7.02
7.78
1000
500
200
50
6.45
7.13
7.79
8.65
6.8
7.51
8.2
9.1
7.14
7.88
8.61
9.55
10
10
10
1
10.5
11.3
12.1
13.4
57
53
50
45
0.057
0.061
0.065
0.068
2380
2180
2015
1835
P6SMB10AT3G
P6SMB12AT3G
P6SMB13AT3G
10A
12A
13A
8.55
10.2
11.1
10
5
5
9.5
11.4
12.4
10
12
13.05
10.5
12.6
13.7
1
1
1
14.5
16.7
18.2
41
36
33
0.073
0.078
0.081
1690
1435
1335
P6SMB15AT3G
P6SMB16AT3G
P6SMB18AT3G
P6SMB20AT3G
15A
16A
18A
20A
12.8
13.6
15.3
17.1
5
5
5
5
14.3
15.2
17.1
19
15.05
16
18
20
15.8
16.8
18.9
21
1
1
1
1
21.2
22.5
25.2
27.7
28
27
24
22
0.084
0.086
0.088
0.09
1175
1110
1000
910
P6SMB22AT3G
P6SMB24AT3G
P6SMB27AT3G
P6SMB30AT3G
22A
24A
27A
30A
18.8
20.5
23.1
25.6
5
5
5
5
20.9
22.8
25.7
28.5
22
24
27.05
30
23.1
25.2
28.4
31.5
1
1
1
1
30.6
33.2
37.5
41.4
20
18
16
14.4
0.092
0.094
0.096
0.097
835
775
700
635
P6SMB33AT3G
P6SMB36AT3G
P6SMB39AT3G
P6SMB43AT3G
33A
36A
39A
43A
28.2
30.8
33.3
36.8
5
5
5
5
31.4
34.2
37.1
40.9
33.05
36
39.05
43.05
34.7
37.8
41
45.2
1
1
1
1
45.7
49.9
53.9
59.3
13.2
12
11.2
10.1
0.098
0.099
0.1
0.101
585
540
500
460
P6SMB47AT3G
P6SMB51AT3G
P6SMB56AT3G
P6SMB62AT3G
47A
51A
56A
62A
40.2
43.6
47.8
53
5
5
5
5
44.7
48.5
53.2
58.9
47.05
51.05
56
62
49.4
53.6
58.8
65.1
1
1
1
1
64.8
70.1
77
85
9.3
8.6
7.8
7.1
0.101
0.102
0.103
0.104
425
395
365
335
P6SMB68AT3G
P6SMB75AT3G
P6SMB91AT3G
68A
75A
91A
58.1
64.1
77.8
5
5
5
64.6
71.3
86.5
68
75.05
91
71.4
78.8
95.5
1
1
1
92
103
125
6.5
5.8
4.8
0.104
0.105
0.106
305
280
235
P6SMB100AT3G
P6SMB120AT3G
P6SMB130AT3G
100A
120A
130A
85.5
102
111
5
5
5
95
114
124
100
120
130.5
105
126
137
1
1
1
137
165
179
4.4
3.6
3.3
0.106
0.107
0.107
215
185
170
P6SMB150AT3G
P6SMB160AT3G
P6SMB180AT3G
150A
160A
180A
128
136
154
5
5
5
143
152
171
150.5
160
180
158
168
189
1
1
1
207
219
246
2.9
2.7
2.4
0.108
0.108
0.108
150
140
130
P6SMB200AT3G 200A 171 5 190 200 210 1 274 2.2 0.108 115
6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. VBR measured at pulse test current IT at an ambient temperature of 25°C.
8. Surge current waveform per Figure 2 and derate per Figure 3.
9. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C
* Include SZ-prefix devices where applicable.
HALF VALUE 7*
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
www.onsemi.com
4
P , PEAK POWER (kW)
P
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
tP
, PULSE WIDTH
1
10
100
0.1 ms1 ms10 ms 100 ms1 ms 10 ms
0.1
Figure 1. Pulse Rating Curve
01234
0
50
100
t, TIME (ms)
VALUE (%)
HALF VALUE - IPP
2
PEAK VALUE - IPP
tr 10 ms
Figure 2. Pulse Waveform
TYPICAL PROTECTION CIRCUIT
Vin VL
Zin
LOAD
Figure 3. Pulse Derating Curve
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T
A= 25 C°
100
80
60
40
20
00 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
120
140
160
tP
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF
IPP
.
Figure 4. Typical Junction Capacitance vs.
Bias Voltage
P6SMB6.8AT3G
P6SMB18AT3G
P6SMB51AT3G
P6SMB200AT3G
BIAS VOLTAGE (VOLTS)
1 10 100 100
0
10
100
1000
10,000
C, CAPACITANCE (pF)
1
5
TJ = 25°C
f = 1 MHz
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
www.onsemi.com
5
APPLICATION NOTES
Response Time
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
Duty Cycle Derating
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
VL
V
Vin
Vin (TRANSIENT) VL
td
V
Vin (TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t t
Figure 5. Figure 6.
Figure 7. Typical Derating Factor for Duty Cycle
DERATING FACTOR
1 ms
10 ms
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100 ms
0.1 0.2 0.5 2 5 10 501 20 100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
www.onsemi.com
6
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGQ2)
under the UL standard for safety 497B and File #E210057.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
U I: J@ ¢ 7‘4 M L *
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
www.onsemi.com
7
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
E
bD
c
L1
L
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
2.261
0.089
2.743
0.108
2.159
0.085 ǒmm
inchesǓ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
AMIN NOM MAX MIN
MILLIMETERS
1.95 2.30 2.47 0.077
INCHES
A1 0.05 0.10 0.20 0.002
b1.96 2.03 2.20 0.077
c0.15 0.23 0.31 0.006
D3.30 3.56 3.95 0.130
E4.06 4.32 4.60 0.160
L0.76 1.02 1.60 0.030
0.091 0.097
0.004 0.008
0.080 0.087
0.009 0.012
0.140 0.156
0.170 0.181
0.040 0.063
NOM MAX
5.21 5.44 5.60 0.205 0.214 0.220
HE
0.51 REF 0.020 REF
D
L1
HE
POLARITY INDICATOR
OPTIONAL AS NEEDED
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
P6SMB6.8AT3/D
SURMETIC is a registered trademark of Semiconductor Components Industries, LLC.
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
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For additional information, please contact your loc
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