NSS12201LT1G Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2005
October, 2016 Rev. 6
1Publication Order Number:
NSS12201L/D
NSS12201LT1G
12 V, 4.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductors e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DCDC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector-Emitter Voltage VCEO 12 Vdc
Collector-Base Voltage VCBO 12 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current Continuous IC2.0 A
Collector Current Peak ICM 4.0 A
Electrostatic Discharge ESD HBM Class 3B
MM Class C
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1) 460
3.7
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA (Note 1) 270 °C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2) 540
4.3
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA (Note 2) 230 °C/W
Junction and Storage
Temperature Range
TJ, Tstg 55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR4 @ 100 mm2, 1 oz. copper traces.
2. FR4 @ 500 mm2, 1 oz. copper traces.
Device Package Shipping
ORDERING INFORMATION
NSS12201LT1G SOT23
(PbFree)
3000/Tape & Reel
MARKING DIAGRAM
SOT23 (TO236)
CASE 318
STYLE 6
3
2
1
www.onsemi.com
12 VOLTS, 4.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 35 mW
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
VF M G
G
VF = Specific Device Code
M = Date Code*
G= PbFree Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
COLLECTOR
3
1
BASE
2
EMITTER
(Note: Microdot may be in either location)
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NSS12201LT1G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
12 − −
Vdc
CollectorBase Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
12 − −
Vdc
EmitterBase Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
6.0 − −
Vdc
Collector Cutoff Current
(VCB = 12 Vdc, IE = 0)
ICBO
0.1
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc)
IEBO
0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
hFE
200
200
200
200
330
CollectorEmitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.01 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.2 A)
VCE(sat)
0.003
0.035
0.053
0.068
0.008
0.050
0.080
0.090
V
Base Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 10 mA)
VBE(sat)
0.760 0.900
V
Base Emitter Turnon Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
0.750 0.900
V
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
fT
150 − −
MHz
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo 450 pF
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo 75 pF
SWITCHING CHARACTERISTICS
Delay (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) td 100 ns
Rise (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) tr 100 ns
Storage (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) ts 350 ns
Fall (VCC = 10 V, IC = 750 mA, IB1 = 15 mA) tf 110 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
94 04 -55°C (2.0 V)
NSS12201LT1G
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3
TYPICAL CHARACTERISTICS
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
1010.10.010.001
0
0.05
0.1
0.15
0.2
1010.10.010.001
0
0.05
0.1
0.15
0.2
0.25
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
1010.10.010.001
125
175
225
325
375
425
525
575
1010.10.010.001
0.3
0.4
0.5
0.6
0.7
0.8
1.0
1.1
Figure 5. Base Emitter TurnOn Voltage vs.
Collector Current
Figure 6. Saturation Region
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
1010.10.010.001
0.1
0.2
0.3
0.4
0.5
0.6
0.9
1.0
1001010.10.01
0
0.2
0.4
0.6
0.8
1.0
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE EMITTER TURNON
VOLTAGE (V)
VCE, COLLECTOREMITTER VOLTAGE (V)
IC/IB = 10 150°C
25°C
55°C
IC/IB = 100
150°C
25°C
55°C
150°C (5.0 V)
150°C (2.0 V)
25°C (5.0 V)
25°C (2.0 V)
55°C (5.0 V)
55°C (2.0 V)
0.9
150°C
25°C
55°C
150°C
25°C
55°C
0.7
0.8
IC = 500 mA
300 mA
100 mA
10 mA
IC/IB = 10
275
475
VCE = 2.0 V
Thermal LImH
NSS12201LT1G
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4
TYPICAL CHARACTERISTICS
100 ms
1 s
1 ms
Thermal Limit
Figure 7. Input Capacitance Figure 8. Output Capacitance
VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)
6543210
175
200
225
275
300
325
375
425
109754210
40
50
60
70
80
90
Figure 9. Safe Operating Area
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.10.01
0.01
0.1
1
10
Cibo, INPUT CAPACITANCE (pF)
Cobo, OUTPUT CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
250
350
Cibo(pF) Cobo(pF)
10 ms
400
368
Single Pulse Test
at Tamb = 25°C
NSS12201LT1G
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5
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T____
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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