MURA115/120, NRVUA120V, SURA8120 Datasheet by ON Semiconductor

View All Related Products | Download PDF Datasheet
% ON Semiconductor”
© Semiconductor Components Industries, LLC, 2017
February, 2017 − Rev. 10 1Publication Order Number:
MURA115T3/D
MURA115, MURA120,
NRVUA120V, SURA8120
Surface Mount
Ultrafast Power Rectifiers
Ideally suited for high voltage, high frequency rectification, or as
free wheeling and protection diodes in surface mount applications
where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.71 V Max @ 1.0 A, TJ = 150°C)
NRVUA and SURA8 Prefixes for Automotive and Other
Applications Requiring Unique Site and Control Change
Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 70 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode Lead
ESD Protection:
Human Body Model > 4000 V (Class 3)
Machine Model > 400 V (Class C)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
ULTRAFAST RECTIFIERS
1 AMPERE, 100−200 VOLTS
www.onsemi.com
MURA115T3G SMA
(Pb−Free) 5,000/Tape & Ree
l
SMA
CASE 403D
MARKING DIAGRAM
U4x
AYWW G
U4x = Device Code
x = C for MURA115
= D for MURA120
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
MURA120T3G SMA
(Pb−Free) 5,000/Tape & Ree
l
NRVUA120VT3G SMA
(Pb−Free) 5,000/Tape & Ree
l
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SURA8120T3G SMA
(Pb−Free) 5,000/Tape & Ree
l
MURA115, MURA120, NRVUA120V, SURA8120
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MURA115T3G
MURA120T3G/SURA8120T3G/NRVUA120VT3G
VRRM
VRWM
VR150
200
V
Average Rectified Forward Current
@ TL = 155°C
@ TL = 135°C
IF(AV) 1.0
2.0
A
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A
Operating Junction Temperature Range TJ65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Lead (TL = 25°C) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
PsiJL
(Note 2)
RqJA
24
216
°C/W
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4.
2. In compliance with JEDEC 51, these values (historically represented by RqJL) are now referenced as PsiJL.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 1.0 A, TJ = 25°C)
(iF = 1.0 A, TJ = 150°C)
vF0.875
0.71
V
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, TJ = 25°C)
(Rated DC Voltage, TJ = 150°C)
iR2.0
50
mA
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/ms) trr 35 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
50) 100%: 25%:
MURA115, MURA120, NRVUA120V, SURA8120
www.onsemi.com
3
TYPICAL CHARACTERISTICS
10
0.1
80604020 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Reverse Current Figure 2. Maximum Reverse Current
0.001
1
100
0
I
R
, REVERSE CURRENT (
m
A)
10
0.01 80604020 20
0
VR, REVERSE VOLTAGE (VOLTS)
1
100
0
IR, REVERSE CURRENT (mA)
TJ = 175°C
TJ = 100°C
TJ = 25°C
TJ = 175°C
TJ = 100°C
TJ = 25°C
100 120 120100140 160 180
0.01
140 180160
TJ = 150°C
0.1
TJ = 150°C
VF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 3. Typical Forward Voltage Figure 4. Maximum Forward Voltage
0.70.60.50.4 0.8
0.01
10
0.3
1
0.1
1.00.9
IF, INSTANTANEOUS FORWARD CURRENT (A)
VF, INSTANTANEOUS VOLTAGE (VOLTS)
0.70.60.3 0.8
0.01
10
1
0.1
10.9
IF, INSTANTANEOUS FORWARD CURRENT (A)
TC = 175°C
100°C25°C
TC = 175°C
100°C25°C
1.1 1.10.50.4
−65°C
150°C−65°C
150°C
dc SQUARE WAVE // // dc SQUARE WAVE www.0nsemi.com
MURA115, MURA120, NRVUA120V, SURA8120
www.onsemi.com
4
TYPICAL CHARACTERISTICS
dc
20
322416
0840
VR, REVERSE VOLTAGE (VOLTS)
TL, LEAD TEMPERATURE (°C)
Figure 5. Typical Capacitance Figure 6. Maximum Capacitance
Figure 7. Current Derating, Lead Figure 8. Current Derating, Ambient
(FR−4 Board with Minimum Pad)
10
50
0
11010090
0
5
80
1
130120 180
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
20
0
VR, REVERSE VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (°C)
10
50
80604020 100
0
1.5
0
1
0.25
140120
Figure 9. Power Dissipation
021.510.5 3.5
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
0.5
0
282012436
15
5
25
C, CAPACITANCE (pF)
32241684
0
0282012436
25
5
15
C, CAPACITANCE (pF)
2
3
PF, AVERAGE POWER DISSIPATION (W)
1.5
160 18
0
1.25
NOTE: TYPICAL
CAPACITANCE AT
0 V = 45 pF
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 47 pF
dc
SQUARE WAVE
dc
SQUARE WAVE
SQUARE WAVE
150140 170160
4
2.5
30
35
40
45
30
35
40
45
1
3
0.5
0.75
2.5 3
2
IF(AV), AVERAGE FORWARD CURRENT (A)
MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMA $ 9 CASE 4030 \SSUE H STVLE 1 STYLE 2 SCALE 1:1 HEfip E Tfi | Ibn \ 14L Pounlrv InnchmR OPTIONAL As NEEDED 15E: srvLEs) «p I)" Semiwndudw" DATE 23 SEP 2015 NOIES t D‘MENS‘ON‘NG AND TOLERANCWG PER ANS‘ m 5M. wee 2 coNTRoLuNG D‘MENS‘ON won a D‘MENS‘ON a SHALL EE MEASURED wxmm D‘MENS‘ON L MILLIMETERS mcHEs mm mm NOM MAX mu NOM MAX A 1 97 2 m 2 20 0 07a 0 053 0 057 A‘ 0 05 0 m 0 20 0 002 0 004 0 cos n 127 Ma ‘63 0050 0057 0084 a 015 025 0M 0005 can ems n 229 230 292 0090 um: um E we ”2 457 men mm man HE ea: 52‘ 559 man 0205 0220 L 076 H4 ‘52 0030 0045 0030 GENERIC MARKING DIAGRAM’ k JLL L L“ SOLDERING FOOTPRINT" 2,000 + + 0,379 ‘ 2.000 + 0.079 SCALE“ (MEL) 'For addmonal mlormamn on our Pb-Free s1va1egy and so‘dermg delaflsy p‘ease download the ON Semiconduclov Solaenng and Moummg Techmques Reference Manua‘, SOLDEHRM/D. xxxx AVWW- xxxx AYWW- M xxxx : Specmc Dewce Code A : AssemMy Locahon v : Vear ww : Work Week - : Pb-Free Package STYLE 1 STYLE 2 "rms Inlormafion \s generic, P‘ease refer to device dam sheeH cma‘ pan marking Pia-Free Indxcator, or mxcrodol “ may or may not be presem. SWLE I Pw‘ CAYHODE (mumw wt» 2 ANODE SWLE 2 N0 POLARH'V ON Semxcunduclm and are hademavks ev Semxcanduclur Campenema lnduslnes. uc dha ON Semxcanduclar ar us suhsxdxanes m xne Unueu sxaxes andJm mhev cmm‘nes ON Semxcunduclar vesewes me “gm lo make changes wunum mnne. mouse In any pruduns necem ON Semanduc‘nv makes nu wanamy. represenlalmn m guarantee regardmg me mayday at W; manual: our any pamcu‘av purpase nnv dues ON Semumnduclm assume any hawm snsmg me: me aepncauen m use M any pmdudm mum and seeemcany dwsc‘axms any and an Mammy mcmdmg wxlham hmmahun spema‘ cansequenha‘ m \nmdenla‘ damages ON Semxmnduclar dues nn| eenyey any hcense under Ms ps|em nghl: Ivar xne ngms ev nlhers
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.97 2.10 2.20 0.078
INCHES
A1 0.05 0.10 0.20 0.002
b1.27 1.45 1.63 0.050
c0.15 0.28 0.41 0.006
D2.29 2.60 2.92 0.090
E4.06 4.32 4.57 0.160
L0.76 1.14 1.52 0.030
0.083 0.087
0.004 0.008
0.057 0.064
0.011 0.016
0.103 0.115
0.170 0.180
0.045 0.060
NOM MAX
4.83 5.21 5.59 0.190 0.205 0.220
HE
SCALE 1:1
SMA
CASE 403D
ISSUE H
DATE 23 SEP 2015
xxxx = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= PbFree Package
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
STYLE 1 STYLE 2
STYLE 1 STYLE 2
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
E
bD
Lc
A
A1 xxxx
AYWWG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
xxxx
AYWWG
GENERIC
MARKING DIAGRAM*
4.000
0.157
2.000
0.079
2.000
0.079
ǒmm
inchesǓ
SCALE 8:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98AON04079D
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SMA
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www menu cumrsuerguwaxem Mavkmg gm 9 www nnserm cum
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 8002829855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative

Products related to this Datasheet

DIODE GEN PURP 150V 2A SMA
DIODE GEN PURP 200V 2A SMA
DIODE GEN PURP 150V 2A SMA
DIODE GEN PURP 200V 2A SMA
DIODE GEN PURP 150V 2A SMA
DIODE GEN PURP 200V 2A SMA
DIODE GEN PURP 150V 2A SMA
DIODE GEN PURP 200V 2A SMA
DIODE GEN PURP 200V 2A SMA
DIODE GEN PURP 200V 2A SMA
DIODE GEN PURP 200V 2A SMA