MMBZ/SZMMBZyyyALT1 Series Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 1996
August, 2016 − Rev. 20 1Publication Order Number:
MMBZ5V6ALT1/D
MMBZxxxALT1G Series,
SZMMBZxxxALT1G Series
Zener Diodes, 24 and
40 Watt Peak Power
SOT−23 Dual Common Anode Zeners
These dual monolithic silicon Zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Features
SOT−23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Standard Zener Breakdown Voltage Range − 5.6 V to 47 V
Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional),
per Figure 6 Waveform
ESD Rating:
− Class 3B (> 16 kV) per the Human Body Model
− Class C (> 400 V) per the Machine Model
ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA
Flammability Rating UL 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
Package designed for optimal automated board assembly
Small package size for high density applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the
13 inch/10,000 unit reel.
SOT−23
CASE 318
STYLE 12
CATHODE 1 3 ANODE
CATHODE 2
MARKING DIAGRAM
See specific marking information in the device marking
column of the table on page 3 of this data sheet.
DEVICE MARKING INFORMATION
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
www.onsemi.com
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1G thru MMBZ9V1ALT1G
@ TL 25°C MMBZ12VALT1G thru MMBZ47VALT1G Ppk 24
40 W
Total Power Dissipation on FR−5 Board (Note 2)
@ TA = 25°C
Derate above 25°C
°PD°
225
1.8 mW°
mW/°C
Thermal Resistance Junction−to−Ambient RqJA 556 °C/W
Total Power Dissipation on Alumina Substrate (Note 3)
@ TA = 25°C
Derate above 25°C
°PD°
300
2.4
°mW
mW/°C
Thermal Resistance Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C
Lead Solder Temperature − Maximum (10 Second Duration) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 6 and derate above TA = 25°C per Figure 7.
2. FR−5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.
*Other voltages may be available upon request.
ORDERING INFORMATION
Device Package Shipping
MMBZ5V6ALT1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
SZMMBZ5V6ALT1G* SOT−23
(Pb−Free) 3,000 / Tape & Reel
MMBZ5V6ALT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
MMBZ6VxALT1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
SZMMBZ6VxALT1G* SOT−23
(Pb−Free) 3,000 / Tape & Reel
MMBZ6VxALT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
MMBZ9V1ALT1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
MMBZ9V1ALT13G SOT−23
(Pb−Free) 10,000 / Tape & Reel
MMBZxxVALT1G SOT−23
(Pb−Free) 3,000 / Tape & Reel
SZMMBZxxVALT1G* SOT−23
(Pb−Free) 3,000 / Tape & Reel
MMBZxxVALT3G SOT−23
(Pb−Free) 10,000 / Tape & Reel
SZMMBZxxVALT3G* SOT−23
(Pb−Free) 10,000 / Tape & Reel
SZMMBZxxVTALT1G* SOT−23
(Pb−Free) 3,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
QVBR Maximum Temperature Coefficient of VBR
IFForward Current
VFForward Voltage @ IF
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK Uni−Directional Zener
IPP
IF
V
I
IR
IT
VRWM
VCVBR VF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 24 WATTS
Device* Device
Marking
VRWM
IR @
VRWM
Breakdown Voltage Max Zener
Impedance (Note 5) VC @ IPP
(Note 6)
QVBR
VBR (Note 4) (V) @ IT
ZZT
@ IZT ZZK @ IZK VCIPP
Volts mAMin Nom Max mA W W mA V A mV/5C
MMBZ5V6ALT1G/T3G 5A6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26
MMBZ6V2ALT1G 6A2 3.0 0.5 5.89 6.2 6.51 1.0 8.7 2.76 2.80
MMBZ6V8ALT1G 6A8 4.5 0.5 6.46 6.8 7.14 1.0 9.6 2.5 3.4
MMBZ9V1ALT1G 9A1 6.0 0.3 8.65 9.1 9.56 1.0 14 1.7 7.5
(VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS
Device* Device
Marking
VRWM
IR @
VRWM
Breakdown Voltage VC @ IPP (Note 6)
QVBR
VBR (Note 4) (V) @ ITVCIPP
Volts nA Min Nom Max mA V A mV/5C
MMBZ12VALT1G 12A 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5
MMBZ15VALT1G 15A 12 50 14.25 15 15.75 1.0 21 1.9 12.3
MMBZ16VALT1G 16A 13 50 15.20 16 16.80 1.0 23 1.7 13.8
MMBZ18VALT1G 18A 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3
MMBZ20VALT1G 20A 17 50 19.00 20 21.00 1.0 28 1.4 17.2
MMBZ27VALT1G/T3G 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3
MMBZ33VALT1G 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4
MMBZ47VALT1G 47A 38 50 44.65 47 49.35 1.0 54 0.74 43.1
(VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS
Device* Device
Marking
VRWM
IR @
VRWM
Breakdown Voltage VC @ IPP (Note 6)
QVBR
VBR (Note 4) (V) @ ITVCIPP
Volts nA Min Nom Max mA V A mV/5C
MMBZ16VTALT1G 16T 13 50 15.68 16 16.32 1.0 23 1.7 13.8
MMBZ47VTALT1G 47T 38 50 46.06 47 47.94 1.0 54 0.74 43.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)
= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.
6. Surge current waveform per Figure 6 and derate per Figure 7
* Include SZ-prefix devices where applicable.
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
www.onsemi.com
4
TYPICAL CHARACTERISTICS
−40 +50
18
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
0
TEMPERATURE (°C)
+100 +150
15
12
9
6
3
0−40 +25
1000
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (°C)
+85 +12
5
100
10
1
0.1
0.01
BREAKDOWN VOLTAGE (VOLTS)
(VBR @ IT)
IR (nA)
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
0 25 50 75 100 125 150 175
300
250
200
150
100
50
0
Figure 4. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
TEMPERATURE (°C)
FR−5 BOARD
ALUMINA SUBSTRATE
01 23
320
280
240
160
120
40
0
C, CAPACITANCE (pF)
BIAS (V)
200
80 15 V
5.6 V
PD, POWER DISSIPATION (mW)
Figure 5. Steady State Power Derating Curve
01 23
60
40
30
10
0
C, CAPACITANCE (pF)
BIAS (V)
50
20
33 V
27 V
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
www.onsemi.com
5
TYPICAL CHARACTERISTICS
0.1 1 10 100 1000
1
10
100
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
Figure 6. Pulse Waveform
VALUE (%)
100
50
001 234
t, TIME (ms)
Figure 7. Pulse Derating Curve
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
HALF VALUE − IPP
2
tP
tr 10 ms
PEAK VALUE − IPP
100
90
80
70
60
50
40
30
20
10
00 25 50 75 100 125 150 175 20
0
TA, AMBIENT TEMPERATURE (°C)
Figure 8. Maximum Non−repetitive Surge
Power, Ppk versus PW Figure 9. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
0.1 1 10 100 100
0
1
10
100
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ TA = 25°C
P
pk
, PEAK SURGE POWER (W)
Ppk, PEAK SURGE POWER (W)
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
www.onsemi.com
6
TYPICAL COMMON ANODE APPLICATIONS
A dual junction common anode design in a SOT−23
package protects two separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of ESD applications are illustrated below.
MMBZ5V6ALT1G
THRU
MMBZ47VALT1G
KEYBOARD
TERMINAL
PRINTER
ETC.
FUNCTIONAL
DECODER
I/O
A
MMBZ5V6ALT1G
THRU
MMBZ47VALT1G
GND
Computer Interface Protection
B
C
D
Microprocessor Protection
I/O
RAM ROM
CLOCK
CPU
CONTROL BUS
ADDRESS BUS
DATA BUS
GND
VGG
VDD
MMBZ5V6ALT1
G
THRU
MMBZ47VALT1
G
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SOT23 (TO236)
CASE 31808
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= PbFree Package
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODEANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODEANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SOT23 (TO236)
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1
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