TO-226-3, TO-92-3 (TO-226AA) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
BS170 MOSFET N-CH 60V 500MA TO92-3 onsemi	35,914 In Stock	1 : ¥70.00000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	500mA (Ta)	10V	5Ohm @ 200mA, 10V	3V @ 1mA	-	±20V	40 pF @ 10 V	-	830mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN2222LL-G MOSFET N-CH 60V 230MA TO92-3 Microchip Technology	6,380 In Stock	1 : ¥88.00000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	230mA (Tj)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 1mA	-	±30V	60 pF @ 25 V	-	400mW (Ta), 1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
2N7000 MOSFET TO92 N 60V 0.2A 5OHM 150C onsemi	66,198 In Stock	1 : ¥101.00000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
BS250P MOSFET P-CH 45V 230MA E-LINE Diodes Incorporated	11,537 In Stock 8,000 Factory	1 : ¥225.00000 Bulk	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	45 V	230mA (Ta)	10V	14Ohm @ 200mA, 10V	3.5V @ 1mA	-	±20V	60 pF @ 10 V	-	700mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)
VP2206N3-G MOSFET P-CH 60V 640MA TO92-3 Microchip Technology	882 In Stock	1 : ¥420.00000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	60 V	640mA (Tj)	5V, 10V	900mOhm @ 3.5A, 10V	3.5V @ 10mA	-	±20V	450 pF @ 25 V	-	740mW (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
2N7000BU MOSFET N-CH 60V 200MA TO92-3 onsemi	19,523 In Stock	1 : ¥82.00000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Tc)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±20V	50 pF @ 25 V	-	400mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN2106N3-G MOSFET N-CH 60V 300MA TO92-3 Microchip Technology	2,169 In Stock	1 : ¥82.00000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	300mA (Tj)	5V, 10V	4Ohm @ 500mA, 10V	2.4V @ 1mA	-	±20V	50 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
2N7000-G MOSFET N-CH 60V 200MA TO92-3 Microchip Technology	1,387 In Stock	1 : ¥82.00000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	200mA (Tj)	4.5V, 10V	5Ohm @ 500mA, 10V	3V @ 1mA	-	±30V	60 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
LND150N3-G MOSFET N-CH 500V 30MA TO92-3 Microchip Technology	7,088 In Stock	1 : ¥98.00000 Bag	-	Bag	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	30mA (Tj)	0V	1000Ohm @ 500µA, 0V	-	-	±20V	10 pF @ 25 V	-	740mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VN10KN3-G MOSFET N-CH 60V 310MA TO92-3 Microchip Technology	5,683 In Stock	1 : ¥98.00000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	310mA (Tj)	5V, 10V	5Ohm @ 500mA, 10V	2.5V @ 1mA	-	±30V	60 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VP2106N3-G MOSFET P-CH 60V 250MA TO92-3 Microchip Technology	5,214 In Stock	1 : ¥105.00000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	60 V	250mA (Tj)	5V, 10V	12Ohm @ 500mA, 10V	3.5V @ 1mA	-	±20V	60 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
LND150N3-G-P003 MOSFET N-CH 500V 30MA TO92-3 Microchip Technology	3,291 In Stock	1 : ¥111.00000 Cut Tape (CT) 2,000 : ¥84.91950 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	500 V	30mA (Tj)	0V	1000Ohm @ 500µA, 0V	-	-	±20V	10 pF @ 25 V	-	740mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN2106N3-G MOSFET N-CH 60V 300MA TO92-3 Microchip Technology	1,209 In Stock	1 : ¥111.00000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	300mA (Tj)	4.5V, 10V	2.5Ohm @ 500mA, 10V	2V @ 1mA	-	±20V	50 pF @ 25 V	-	740mW (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
2N7008-G MOSFET N-CH 60V 230MA TO92-3 Microchip Technology	1,131 In Stock	1 : ¥111.00000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	230mA (Tj)	5V, 10V	7.5Ohm @ 500mA, 10V	2.5V @ 250µA	-	±30V	50 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
DN2530N3-G MOSFET N-CH 300V 175MA TO92 Microchip Technology	11,113 In Stock	1 : ¥129.00000 Bag	-	Bag	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	300 V	175mA (Tj)	0V	12Ohm @ 150mA, 0V	-	-	±20V	300 pF @ 25 V	-	740mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92 (TO-226)	TO-226-3, TO-92-3 (TO-226AA)
VN0106N3-G MOSFET N-CH 60V 350MA TO92-3 Microchip Technology	13,322 In Stock	1 : ¥132.00000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	350mA (Tj)	5V, 10V	3Ohm @ 1A, 10V	2.4V @ 1mA	-	±20V	65 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TP2104N3-G-P003 MOSFET P-CH 40V 175MA TO92-3 Microchip Technology	4,560 In Stock	1 : ¥145.00000 Cut Tape (CT) 2,000 : ¥111.04850 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	175mA (Tj)	4.5V, 10V	6Ohm @ 500mA, 10V	2V @ 1mA	-	±20V	60 pF @ 25 V	-	740mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
STQ1NK60ZR-AP MOSFET N-CH 600V 300MA TO92-3 STMicroelectronics	10,943 In Stock	1 : ¥150.00000 Cut Tape (CT) 2,000 : ¥38.37550 Tape & Box (TB)	SuperMESH™	Cut Tape (CT) Tape & Box (TB)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	300mA (Tc)	10V	15Ohm @ 400mA, 10V	4.5V @ 50µA	6.9 nC @ 10 V	±30V	94 pF @ 25 V	-	3W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
BS107P MOSFET N-CH 200V 120MA TO92-3 Diodes Incorporated	2,501 In Stock	1 : ¥163.00000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	120mA (Ta)	2.6V, 5V	30Ohm @ 100mA, 5V	-	-	±20V	-	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)
VP0104N3-G MOSFET P-CH 40V 250MA TO92-3 Microchip Technology	931 In Stock	1 : ¥167.00000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	40 V	250mA (Tj)	5V, 10V	8Ohm @ 500mA, 10V	3.5V @ 1mA	-	±20V	60 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0106N3-G MOSFET N-CH 60V 350MA TO92-3 Microchip Technology	2,283 In Stock	1 : ¥173.00000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	350mA (Tj)	4.5V, 10V	3Ohm @ 500mA, 10V	2V @ 500µA	-	±20V	60 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
VP0106N3-G MOSFET P-CH 60V 250MA TO92-3 Microchip Technology	1,205 In Stock	1 : ¥173.00000 Bag	-	Bag	Active	P-Channel	MOSFET (Metal Oxide)	60 V	250mA (Tj)	5V, 10V	8Ohm @ 500mA, 10V	3.5V @ 1mA	-	±20V	60 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
TN0606N3-G MOSFET N-CH 60V 500MA TO92-3 Microchip Technology	1,177 In Stock	1 : ¥173.00000 Bag	-	Bag	Active	N-Channel	MOSFET (Metal Oxide)	60 V	500mA (Tj)	3V, 10V	1.5Ohm @ 750mA, 10V	2V @ 1mA	-	±20V	150 pF @ 25 V	-	1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
ZVP3310A MOSFET P-CH 100V 140MA TO92-3 Diodes Incorporated	4,268 In Stock 32,000 Factory	1 : ¥175.00000 Bulk	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	100 V	140mA (Ta)	10V	20Ohm @ 150mA, 10V	3.5V @ 1mA	-	±20V	50 pF @ 25 V	-	625mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)
ZVN2110A MOSFET N-CH 100V 320MA TO92-3 Diodes Incorporated	2,716 In Stock 4,000 Factory	1 : ¥178.00000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	320mA (Ta)	10V	4Ohm @ 1A, 10V	2.4V @ 1mA	-	±20V	75 pF @ 25 V	-	700mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-92	TO-226-3, TO-92-3 (TO-226AA)

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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