TO-220-3 Full Pack, Isolated Tab Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-220AB Full Pack
MOSFET P-CH 100V 7.7A TO220-3
Vishay Siliconix
2,469
In Stock
1 : ¥202.00000
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Active
P-Channel
MOSFET (Metal Oxide)
100 V
7.7A (Tc)
10V
300mOhm @ 4.6A, 10V
4V @ 250µA
38 nC @ 10 V
±20V
860 pF @ 25 V
-
42W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET P-CH 60V 12A TO220-3
Vishay Siliconix
154
In Stock
1 : ¥220.00000
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-
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Active
P-Channel
MOSFET (Metal Oxide)
60 V
12A (Tc)
10V
140mOhm @ 7.2A, 10V
4V @ 250µA
34 nC @ 10 V
±20V
1100 pF @ 25 V
-
42W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET P-CH 200V 6.1A TO220-3
Vishay Siliconix
1,054
In Stock
1 : ¥300.00000
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-
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Active
P-Channel
MOSFET (Metal Oxide)
200 V
6.1A (Tc)
10V
500mOhm @ 3.7A, 10V
4V @ 250µA
44 nC @ 10 V
±20V
1200 pF @ 25 V
-
40W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 100V 17A TO220-3
Vishay Siliconix
2,074
In Stock
1 : ¥328.00000
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Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
10V
77mOhm @ 10A, 10V
4V @ 250µA
72 nC @ 10 V
±20V
1700 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 200V 9.8A TO220-3
Vishay Siliconix
600
In Stock
1 : ¥347.00000
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-
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Active
N-Channel
MOSFET (Metal Oxide)
200 V
9.8A (Tc)
10V
180mOhm @ 5.9A, 10V
4V @ 250µA
70 nC @ 10 V
±20V
1300 pF @ 25 V
-
40W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 60V 14A TO220-3
Vishay Siliconix
543
In Stock
1 : ¥352.00000
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Active
N-Channel
MOSFET (Metal Oxide)
60 V
14A (Tc)
10V
100mOhm @ 8.4A, 10V
4V @ 250µA
25 nC @ 10 V
±20V
640 pF @ 25 V
-
37W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET P-CH 250V 4.1A TO220-3
Vishay Siliconix
2,407
In Stock
1 : ¥377.00000
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-
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Active
P-Channel
MOSFET (Metal Oxide)
250 V
4.1A (Tc)
10V
1Ohm @ 2.5A, 10V
4V @ 250µA
38 nC @ 10 V
±20V
680 pF @ 25 V
-
35W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 60V 8A TO220-3
Vishay Siliconix
581
In Stock
1 : ¥426.00000
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-
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Active
N-Channel
MOSFET (Metal Oxide)
60 V
8A (Tc)
4V, 5V
200mOhm @ 4.8A, 5V
2V @ 250µA
8.4 nC @ 5 V
±10V
400 pF @ 25 V
-
27W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 60V 37A TO220-3
Vishay Siliconix
1,869
In Stock
1 : ¥495.00000
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-
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Active
N-Channel
MOSFET (Metal Oxide)
60 V
37A (Tc)
10V
18mOhm @ 22A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
2400 pF @ 25 V
-
50W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET P-CH 100V 11A TO220-3
Vishay Siliconix
1,088
In Stock
1 : ¥657.00000
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-
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Active
P-Channel
MOSFET (Metal Oxide)
100 V
11A (Tc)
10V
200mOhm @ 6.6A, 10V
4V @ 250µA
61 nC @ 10 V
±20V
1400 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 200V 9.9A TO220-3
Vishay Siliconix
638
In Stock
1 : ¥692.00000
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-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
9.9A (Tc)
4V, 5V
180mOhm @ 5.9A, 5V
2V @ 250µA
66 nC @ 10 V
±10V
1800 pF @ 25 V
-
40W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 200V 5.9A TO220-3
Vishay Siliconix
386
In Stock
1 : ¥214.00000
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-
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Active
N-Channel
MOSFET (Metal Oxide)
200 V
5.9A (Tc)
10V
400mOhm @ 3.5A, 10V
4V @ 250µA
43 nC @ 10 V
±20V
800 pF @ 25 V
-
35W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET P-CH 200V 3A TO220-3
Vishay Siliconix
4,283
In Stock
1 : ¥222.00000
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-
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Active
P-Channel
MOSFET (Metal Oxide)
200 V
3A (Tc)
10V
1.5Ohm @ 1.8A, 10V
4V @ 250µA
15 nC @ 10 V
±20V
340 pF @ 15 V
-
30W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET P-CH 60V 5.3A TO220-3
Vishay Siliconix
1,378
In Stock
1 : ¥247.00000
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-
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Active
P-Channel
MOSFET (Metal Oxide)
60 V
5.3A (Tc)
10V
500mOhm @ 3.2A, 10V
4V @ 250µA
12 nC @ 10 V
±20V
270 pF @ 25 V
-
27W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 800V 2.1A TO220-3
Vishay Siliconix
1,647
In Stock
1 : ¥281.00000
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-
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Active
N-Channel
MOSFET (Metal Oxide)
800 V
2.1A (Tc)
10V
3Ohm @ 1.3A, 10V
4V @ 250µA
78 nC @ 10 V
±20V
1300 pF @ 25 V
-
35W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 60V 8A TO220-3
Vishay Siliconix
739
In Stock
1 : ¥296.00000
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-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
8A (Tc)
10V
200mOhm @ 4.8A, 10V
4V @ 250µA
11 nC @ 10 V
±20V
300 pF @ 25 V
-
27W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 100V 4.5A TO220-3
Vishay Siliconix
873
In Stock
1 : ¥345.00000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
4.5A (Tc)
10V
540mOhm @ 2.7A, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
27W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 400V 5.4A TO220-3
Vishay Siliconix
1,082
In Stock
1 : ¥349.00000
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-
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Active
N-Channel
MOSFET (Metal Oxide)
400 V
5.4A (Tc)
10V
550mOhm @ 3.2A, 10V
4V @ 250µA
66 nC @ 10 V
±20V
1370 pF @ 25 V
-
40W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 500V 4.6A TO220-3
Vishay Siliconix
284
In Stock
1 : ¥350.00000
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Active
N-Channel
MOSFET (Metal Oxide)
500 V
4.6A (Tc)
10V
850mOhm @ 2.8A, 10V
4V @ 250µA
67 nC @ 10 V
±20V
1300 pF @ 25 V
-
40W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 100V 9.7A TO220-3
Vishay Siliconix
1,000
In Stock
1 : ¥405.00000
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-
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Active
N-Channel
MOSFET (Metal Oxide)
100 V
9.7A (Tc)
10V
160mOhm @ 5.8A, 10V
4V @ 250µA
33 nC @ 10 V
±20V
670 pF @ 25 V
-
42W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET P-CH 200V 2A TO220-3
Vishay Siliconix
906
In Stock
1 : ¥434.00000
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Active
P-Channel
MOSFET (Metal Oxide)
200 V
2A (Tc)
10V
3Ohm @ 1.2A, 10V
4V @ 250µA
13 nC @ 10 V
±20V
180 pF @ 25 V
-
27W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET P-CH 200V 4.3A TO220-3
Vishay Siliconix
1,954
In Stock
1 : ¥463.00000
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Active
P-Channel
MOSFET (Metal Oxide)
200 V
4.3A (Tc)
10V
800mOhm @ 2.6A, 10V
4V @ 250µA
29 nC @ 10 V
±20V
700 pF @ 25 V
-
35W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 500V 6.6A TO220-3
Vishay Siliconix
130
In Stock
1 : ¥536.00000
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Active
N-Channel
MOSFET (Metal Oxide)
500 V
6.6A (Tc)
10V
520mOhm @ 4A, 10V
4V @ 250µA
52 nC @ 10 V
±30V
1423 pF @ 25 V
-
60W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
TO-220AB Full Pack
MOSFET N-CH 60V 30A TO220-3
Vishay Siliconix
524
In Stock
1 : ¥573.00000
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Active
N-Channel
MOSFET (Metal Oxide)
60 V
30A (Tc)
4V, 5V
28mOhm @ 18A, 5V
2V @ 250µA
66 nC @ 5 V
±10V
3300 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
3,969
In Stock
1 : ¥575.00000
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Obsolete
N-Channel
MOSFET (Metal Oxide)
500 V
9A (Tc)
10V
900mOhm @ 2.3A, 10V
3.8V @ 250µA
24.5 nC @ 10 V
±30V
1116 pF @ 50 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ITO-220
TO-220-3 Full Pack, Isolated Tab
Showing
of 258

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.