6-PowerUFDFN Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
6 PowerUFDFN
MOSFET P-CH 12V 8A MICROFET
onsemi
33,970
In Stock
1 : ¥179.00000
Cut Tape (CT)
5,000 : ¥39.02340
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
8A (Ta)
1.8V, 4.5V
22mOhm @ 8A, 4.5V
1V @ 250µA
20 nC @ 4.5 V
±8V
2315 pF @ 6 V
-
2.1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
MicroFet 1.6x1.6 Thin
6-PowerUFDFN
6 PowerUFDFN
MOSFET N-CH 20V 9A MICROFET
onsemi
1,440
In Stock
1 : ¥233.00000
Cut Tape (CT)
5,000 : ¥52.90680
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
9A (Ta)
1.8V, 4.5V
18mOhm @ 9A, 4.5V
1V @ 250µA
8.5 nC @ 4.5 V
±12V
865 pF @ 10 V
-
2.1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
MicroFet 1.6x1.6 Thin
6-PowerUFDFN
DMP2035UFCL-7
MOSFET BVDSS: 41V~60V X1-DFN1616
Diodes Incorporated
4,828
In Stock
1 : ¥113.00000
Cut Tape (CT)
3,000 : ¥26.06500
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
6.5A (Ta)
4.5V, 10V
25mOhm @ 6.5A, 10V
2.5V @ 250µA
9.1 nC @ 10 V
±20V
639 pF @ 30 V
-
780mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
U-DFN1616-6 (Type K)
6-PowerUFDFN
X1-DFN1616-6
MOSFET N-CH 20V 9A X1-DFN1616-6
Diodes Incorporated
2,939
In Stock
573,000
Factory
1 : ¥118.00000
Cut Tape (CT)
3,000 : ¥27.25000
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
9A (Ta)
1.8V, 4.5V
14mOhm @ 9A, 4.5V
900mV @ 250µA
21.5 nC @ 4.5 V
±10V
1788 pF @ 10 V
-
610mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1616-6 (Type E)
6-PowerUFDFN
X1-DFN1616-6
MOSFET N-CH 60V 3A X1-DFN1616-6
Diodes Incorporated
2,660
In Stock
24,000
Factory
1 : ¥128.00000
Cut Tape (CT)
3,000 : ¥29.80967
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
3A (Ta)
4V, 10V
85mOhm @ 1.5A, 10V
3V @ 250µA
12.3 nC @ 10 V
±20V
606 pF @ 20 V
-
600mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1616-6 (Type E)
6-PowerUFDFN
NTLUS020N03CTAG
MOSFET N-CH 30V 4.5A 6UDFN
onsemi
2,396
In Stock
1 : ¥160.00000
Cut Tape (CT)
3,000 : ¥36.16267
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
4.5V, 10V
18mOhm @ 6A, 10V
2.2V @ 250µA
8 nC @ 10 V
±20V
400 pF @ 15 V
-
640mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
NTLUS020N03CTAG
MOSFET N-CH 30V 5.3A 6UDFN
onsemi
829
In Stock
1 : ¥172.00000
Cut Tape (CT)
3,000 : ¥39.17033
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.3A (Ta)
4.5V, 10V
13mOhm @ 8A, 10V
2.2V @ 250µA
11 nC @ 10 V
±20V
620 pF @ 15 V
-
650mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
DMP2035UFCL-7
MOSFET P-CH 20V 6.6A 6UDFN
Diodes Incorporated
3,685
In Stock
1 : ¥176.00000
Cut Tape (CT)
3,000 : ¥42.98400
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
6.6A (Ta)
1.8V, 4.5V
24mOhm @ 8A, 4.5V
1V @ 250µA
44 nC @ 8 V
±8V
2200 pF @ 10 V
-
740mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
U-DFN1616-6 (Type K)
6-PowerUFDFN
X1-DFN1616-6
PCH -30V -4.5A POWER MOSFET. RW4
Rohm Semiconductor
1,162
In Stock
1 : ¥213.00000
Cut Tape (CT)
3,000 : ¥53.79367
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
4.5V, 10V
48mOhm @ 4.5A, 10V
2.5V @ 1mA
11 nC @ 10 V
±20V
485 pF @ 15 V
-
1.5W (Ta)
150°C (TJ)
-
-
Surface Mount
DFN1616-7T
6-PowerUFDFN
X1-DFN1616-6
NCH 30V 4.5A POWER MOSFET: RW4E0
Rohm Semiconductor
2,468
In Stock
1 : ¥248.00000
Cut Tape (CT)
3,000 : ¥64.22900
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
2.5V, 4.5V
40mOhm @ 4.5A, 4.5V
1.5V @ 1mA
4 nC @ 4.5 V
±12V
450 pF @ 15 V
-
1.5W (Ta)
150°C (TJ)
-
-
Surface Mount
DFN1616-7T
6-PowerUFDFN
X1-DFN1616-6
NCH 30V 7.5A POWER MOSFET: RW4E0
Rohm Semiconductor
3,877
In Stock
1 : ¥257.00000
Cut Tape (CT)
3,000 : ¥66.79267
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
7.5A (Ta)
2.5V, 4.5V
26mOhm @ 7.5A, 4.5V
1.5V @ 2mA
6.3 nC @ 4.5 V
±12V
720 pF @ 15 V
-
1.5W (Ta)
150°C (TJ)
-
-
Surface Mount
DFN1616-7T
6-PowerUFDFN
X1-DFN1616-6
MOSFET P-CH 12V 6.6A X1-DFN1616
Diodes Incorporated
1,789
In Stock
1 : ¥176.00000
Cut Tape (CT)
3,000 : ¥42.98400
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
6.6A (Ta)
1.5V, 4.5V
29mOhm @ 4A, 4.5V
950mV @ 250µA
26.1 nC @ 8 V
±8V
1357.4 pF @ 10 V
-
613mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
X1-DFN1616-6 (Type E)
6-PowerUFDFN
X1-DFN1616-6
PCH -20V -4.5A POWER MOSFET: RW4
Rohm Semiconductor
30,755
In Stock
1 : ¥201.00000
Cut Tape (CT)
3,000 : ¥50.57400
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.5A (Ta)
1.8V, 4.5V
56mOhm @ 4.5A, 4.5V
1.5V @ 1mA
6.5 nC @ 4.5 V
±8V
460 pF @ 10 V
-
1.5W (Ta)
150°C (TJ)
-
-
Surface Mount
DFN1616-7T
6-PowerUFDFN
X1-DFN1616-6
NCH 30V 6.5A, HEML1616L7, POWER
Rohm Semiconductor
2,308
In Stock
1 : ¥241.00000
Cut Tape (CT)
3,000 : ¥62.51233
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6.5A (Ta)
4.5V, 10V
22.5mOhm @ 6.5A, 10V
2.5V @ 1mA
4.3 nC @ 10 V
±20V
260 pF @ 15 V
-
1.5W (Ta)
150°C (TJ)
-
-
Surface Mount
DFN1616-7T
6-PowerUFDFN
DMP2035UFCL-7
MOSFET N-CH 20V 1.8A 6UDFN
Diodes Incorporated
2,984
In Stock
90,000
Factory
1 : ¥73.00000
Cut Tape (CT)
3,000 : ¥15.79033
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.8A (Ta)
1.8V, 4.5V
100mOhm @ 3.6A, 4.5V
1V @ 250µA
2.8 nC @ 10 V
±12V
130 pF @ 10 V
-
450mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
U-DFN1616-6 (Type K)
6-PowerUFDFN
6-PowerUFDFN
MOSFET P-CH 20V 2.6A 6UDFN
onsemi
0
In Stock
67,615
Marketplace
Obsolete
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
1.5V, 4.5V
62mOhm @ 4A, 4.5V
1V @ 250µA
12.3 nC @ 4.5 V
±8V
950 pF @ 10 V
-
600mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
6-UDFN_517AP
MOSFET N-CH 30V 9.4A 6UDFN
onsemi
0
In Stock
2,160
Marketplace
Obsolete
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
9.4A (Ta)
1.8V, 10V
11.4mOhm @ 8A, 10V
1.1V @ 250µA
7.5 nC @ 4.5 V
±12V
690 pF @ 15 V
-
2.37W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
6 PowerUFDFN
MOSFET N-CH 20V 9A MICROFET
onsemi
0
In Stock
195,517
Marketplace
Obsolete
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
9A (Ta)
1.8V, 4.5V
18mOhm @ 9A, 4.5V
1V @ 250µA
8.5 nC @ 4.5 V
±12V
865 pF @ 10 V
-
700mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
MicroFet 1.6x1.6 Thin
6-PowerUFDFN
FDME0106NZT
SMALL SIGNAL N-CHANNEL MOSFET
Fairchild Semiconductor
21,625
Marketplace
1,297 : ¥36.40247
Bulk
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
9A (Ta)
1.8V, 4.5V
18mOhm @ 9A, 4.5V
1V @ 250µA
8.5 nC @ 4.5 V
±12V
865 pF @ 10 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
MicroFet 1.6x1.6 Thin
6-PowerUFDFN
6-PowerUFDFN
MOSFET P-CH 20V 2.6A 6UDFN
onsemi
0
In Stock
1,773
Marketplace
Obsolete
-
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
1.5V, 4.5V
62mOhm @ 4A, 4.5V
1V @ 250µA
12.3 nC @ 4.5 V
±8V
950 pF @ 10 V
-
600mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
NTLUS020N03CTAG
MOSFET P-CH 12V 4.4A 6UDFN
onsemi
0
In Stock
39,000
Marketplace
Obsolete
-
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
12 V
4.4A (Ta)
1.8V, 4.5V
24mOhm @ 7A, 4.5V
1V @ 250µA
15.8 nC @ 4.5 V
±8V
1570 pF @ 6 V
-
660mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
NTLUS020N03CTAG
MOSFET P-CH 12V 4.4A 6UDFN
onsemi
0
In Stock
3,000
Marketplace
Obsolete
-
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
P-Channel
MOSFET (Metal Oxide)
12 V
4.4A (Ta)
1.8V, 4.5V
24mOhm @ 7A, 4.5V
1V @ 250µA
15.8 nC @ 4.5 V
±8V
1570 pF @ 6 V
-
660mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
6-PowerUFDFN
MOSFET P-CH 20V 2.2A 6UDFN
onsemi
0
In Stock
54,000
Marketplace
865 : ¥55.39538
Bulk
-
Tape & Reel (TR)
Bulk
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
2.2A (Ta)
1.5V, 4.5V
85mOhm @ 3A, 4.5V
1V @ 250µA
8.5 nC @ 4.5 V
±8V
450 pF @ 10 V
-
600mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
6-PowerUFDFN
MOSFET P-CH 30V 2A 6UDFN
onsemi
0
In Stock
45,000
Marketplace
865 : ¥55.39538
Bulk
-
Tape & Reel (TR)
Bulk
Obsolete
P-Channel
MOSFET (Metal Oxide)
30 V
2A (Ta)
4.5V, 10V
90mOhm @ 3A, 10V
3V @ 250µA
5 nC @ 4.5 V
±20V
250 pF @ 15 V
-
600mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
6-PowerUFDFN
MOSFET P-CH 20V 2.2A 6UDFN
onsemi
35,000
Marketplace
865 : ¥55.39538
Bulk
-
Bulk
Obsolete
P-Channel
MOSFET (Metal Oxide)
20 V
2.2A (Ta)
1.5V, 4.5V
86mOhm @ 3A, 4.5V
1V @ 250µA
8.5 nC @ 4.5 V
±8V
450 pF @ 10 V
-
600mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
Showing
of 46

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.