Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
BSC160N15NS5SCATMA1 MOSFET N-CH 150V 56A PG-WSON-8 Infineon Technologies	1,662 In Stock	1 : ¥461.00000 Cut Tape (CT) 4,000 : ¥184.17500 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	56A (Tc)	8V, 10V	16mOhm @ 28A, 10V	4.6V @ 60µA	23.1 nC @ 10 V	±20V	1820 pF @ 75 V	-	115W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-WSON-8-2	8-PowerWDFN
DMN3061SWQ-13 MOSFET BVDSS: 25V~30V SOT323 T&R Diodes Incorporated	9,891 In Stock	1 : ¥57.00000 Cut Tape (CT) 10,000 : ¥9.88470 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	2.7A (Ta)	3.3V, 10V	60mOhm @ 3.1A, 10V	1.8V @ 250µA	3.5 nC @ 4.5 V	±20V	278 pF @ 15 V	-	490mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-323	SC-70, SOT-323
PMPB43XPE,115 MOSFET P-CH 20V 5A DFN2020MD-6 Nexperia USA Inc.	2,623 In Stock	1 : ¥94.00000 Cut Tape (CT) 3,000 : ¥21.47500 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	5A (Ta)	1.8V, 4.5V	48mOhm @ 5A, 4.5V	900mV @ 250µA	23.4 nC @ 4.5 V	±12V	1550 pF @ 10 V	-	1.7W (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.