SiC (Silicon Carbide) Schottky Single Diodes

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of 1,833

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
C3D04060E-TR DIODE SIL CARB 600V 13.5A TO252 Wolfspeed, Inc.	9,821 In Stock	1 : ¥435.00000 Cut Tape (CT) 2,500 : ¥140.09240 Tape & Reel (TR)	Z-Rec®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	SiC (Silicon Carbide) Schottky	600 V	13.5A	1.8 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 600 V	251pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
IDL04G65C5XUMA2 DIODE SIL CARB 650V 4A PGVSON4 Infineon Technologies	4,003 In Stock	1 : ¥494.00000 Cut Tape (CT) 3,000 : ¥141.14400 Tape & Reel (TR)	CoolSiC™+	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	Zero Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	130pF @ 1V, 1MHz	-	-	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 175°C
C4D02120E DIODE SIL CARB 1200V 10A TO2522 Wolfspeed, Inc.	1,396 In Stock	1 : ¥510.00000 Tube	Z-Rec®	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 2 A	Zero Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	167pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
GB01SLT06-214 DIODE SIL CARB 650V 1A DO214AA Navitas Semiconductor, Inc.	19,290 In Stock	1 : ¥538.00000 Cut Tape (CT) 3,000 : ¥161.79233 Tape & Reel (TR)	SiC Schottky MPS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	SiC (Silicon Carbide) Schottky	650 V	1A	2 V @ 1 A	Zero Recovery Time > 500mA (Io)	0 ns	10 µA @ 6.5 V	76pF @ 1V, 1MHz	-	-	Surface Mount	DO-214AA, SMB	DO-214AA	-55°C ~ 175°C
STPSC10H065B-TR DIODE SIL CARBIDE 650V 10A DPAK STMicroelectronics	169 In Stock	1 : ¥585.00000 Cut Tape (CT) 2,500 : ¥181.24520 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.75 V @ 10 A	Zero Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-40°C ~ 175°C
C3D06060A DIODE SIL CARB 600V 19A TO220-2 Wolfspeed, Inc.	16,392 In Stock	1 : ¥636.00000 Tube	Z-Rec®	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	19A	1.8 V @ 6 A	Zero Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	294pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
C3D06060F DIODE SIC 600V 11.5A TO220-F2 Wolfspeed, Inc.	10,273 In Stock	1 : ¥636.00000 Tube	Z-Rec®	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	11.5A	1.8 V @ 6 A	Zero Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	294pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2 Full Pack	TO-220-F2	-55°C ~ 175°C
IDM08G120C5XTMA1 DIODE SIL CARB 1200V 8A PGTO2522 Infineon Technologies	3,179 In Stock	1 : ¥741.00000 Cut Tape (CT) 2,500 : ¥233.22040 Tape & Reel (TR)	CoolSiC™+	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	SiC (Silicon Carbide) Schottky	1200 V	8A	1.95 V @ 8 A	Zero Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	365pF @ 1V, 1MHz	-	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	PG-TO252-2	-55°C ~ 175°C
STPSC10H065BY-TR DIODE SIL CARBIDE 650V 10A DPAK STMicroelectronics	354 In Stock	1 : ¥766.00000 Cut Tape (CT) 2,500 : ¥250.42040 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	SiC (Silicon Carbide) Schottky	650 V	10A	-	Zero Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-40°C ~ 175°C
GB01SLT12-214 DIODE SIL CARBIDE 1.2KV 1A SMB Navitas Semiconductor, Inc.	4,368 In Stock	1 : ¥794.00000 Cut Tape (CT) 3,000 : ¥258.21100 Tape & Reel (TR)	SiC Schottky MPS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	SiC (Silicon Carbide) Schottky	1200 V	1A	1.8 V @ 1 A	Zero Recovery Time > 500mA (Io)	0 ns	5 µA @ 1200 V	61pF @ 1V, 1MHz	-	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
C3D10060A DIODE SIL CARB 600V 30A TO220-2 Wolfspeed, Inc.	5,866 In Stock	1 : ¥927.00000 Tube	Z-Rec®	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	30A	1.8 V @ 10 A	Zero Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	480pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
C4D05120E DIODE SIL CARB 1200V 19A TO2522 Wolfspeed, Inc.	6,380 In Stock	1 : ¥999.00000 Tube	Z-Rec®	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	19A	1.8 V @ 5 A	Zero Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	390pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
IDH10G120C5XKSA1 DIODE SIC 1.2KV 10A PGTO2201 Infineon Technologies	3,251 In Stock	1 : ¥1,020.00000 Tube	CoolSiC™+	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	Zero Recovery Time > 500mA (Io)	0 ns	62 µA @ 1200 V	525pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
FFSD08120A DIODE SIC 1.2KV 22.5A TO252AA onsemi	4,447 In Stock	1 : ¥1,183.00000 Cut Tape (CT) 2,500 : ¥439.50240 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	SiC (Silicon Carbide) Schottky	1200 V	22.5A	1.75 V @ 8 A	Zero Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	538pF @ 1V, 100kHz	-	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
STPSC20065GY-TR DIODE SIL CARBIDE 650V 20A D2PAK STMicroelectronics	1,623 In Stock	1 : ¥1,215.00000 Cut Tape (CT) 1,000 : ¥467.98000 Tape & Reel (TR)	ECOPACK®2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 20 A	Zero Recovery Time > 500mA (Io)	0 ns	150 µA @ 600 V	1250pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
FFSD10120A DIODE SIL CARBIDE 1200V TO252AA onsemi	4,880 In Stock	1 : ¥1,261.00000 Cut Tape (CT) 2,500 : ¥478.55080 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	SiC (Silicon Carbide) Schottky	1200 V	-	1.75 V @ 10 A	Zero Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	-	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-
GP3D005A170B DIODE SIL CARB 1700V 21A TO2472 SemiQ	1,769 In Stock	1 : ¥1,318.00000 Tube	Amp+™	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	21A	1.65 V @ 5 A	Zero Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	347pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
IDH16G65C6XKSA1 DIODE SIL CARB 650V 34A PGTO220 Infineon Technologies	3,600 In Stock	1 : ¥1,334.00000 Tube	-	Tube	Not For New Designs	SiC (Silicon Carbide) Schottky	650 V	34A	1.35 V @ 16 A	Zero Recovery Time > 500mA (Io)	0 ns	53 µA @ 420 V	783pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
FFSB3065B DIODE SIL CARBIDE 650V 73A TO263 onsemi	969 In Stock	1 : ¥1,363.00000 Cut Tape (CT) 800 : ¥546.02375 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	SiC (Silicon Carbide) Schottky	650 V	73A	1.7 V @ 30 A	Zero Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1280pF @ 1V, 100kHz	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)	-55°C ~ 175°C
IDDD16G65C6XTMA1 DIODE SIC 650V 43A PGHDSOP101 Infineon Technologies	395 In Stock	1 : ¥1,391.00000 Cut Tape (CT) 1,700 : ¥503.55118 Tape & Reel (TR)	CoolSiC™+	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	SiC (Silicon Carbide) Schottky	650 V	43A	-	Zero Recovery Time > 500mA (Io)	0 ns	53 µA @ 420 V	783pF @ 1V, 1MHz	-	-	Surface Mount	10-PowerSOP Module	PG-HDSOP-10-1	-55°C ~ 175°C
GP3D010A170B DIODE SIL CARB 1700V 39A TO2472 SemiQ	543 In Stock	1 : ¥1,474.00000 Tube	Amp+™	Tube	Active	SiC (Silicon Carbide) Schottky	1700 V	39A	1.65 V @ 10 A	Zero Recovery Time > 500mA (Io)	0 ns	40 µA @ 1700 V	699pF @ 1V, 1MHz	-	-	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
FFSB3065B-F085 DIODE SIL CARBIDE 650V 73A D2PAK onsemi	1,311 In Stock	1 : ¥1,519.00000 Cut Tape (CT) 800 : ¥620.15250 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	SiC (Silicon Carbide) Schottky	650 V	73A	1.7 V @ 30 A	Zero Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1280pF @ 1V, 100kHz	Automotive	AEC-Q101	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263 (D2PAK)	-55°C ~ 175°C
IDH20G65C6XKSA1 DIODE SIL CARB 650V 41A PGTO220 Infineon Technologies	677 In Stock	1 : ¥1,552.00000 Tube	-	Tube	Not For New Designs	SiC (Silicon Carbide) Schottky	650 V	41A	1.35 V @ 20 A	Zero Recovery Time > 500mA (Io)	0 ns	67 µA @ 420 V	970pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDDD20G65C6XTMA1 DIODE SIC 650V 51A PGHDSOP101 Infineon Technologies	4,570 In Stock	1 : ¥1,610.00000 Cut Tape (CT) 1,700 : ¥608.49176 Tape & Reel (TR)	CoolSiC™+	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	SiC (Silicon Carbide) Schottky	650 V	51A	-	Zero Recovery Time > 500mA (Io)	0 ns	67 µA @ 420 V	970pF @ 1V, 1MHz	-	-	Surface Mount	10-PowerSOP Module	PG-HDSOP-10-1	-55°C ~ 175°C
C4D10120A DIODE SIL CARB 1200V 33A TO220 Wolfspeed, Inc.	3,300 In Stock	1 : ¥1,678.00000 Tube	Z-Rec®	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	33A	1.8 V @ 10 A	Zero Recovery Time > 500mA (Io)	0 ns	250 µA @ 1200 V	754pF @ 0V, 1MHz	-	-	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C

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Types of Rectifier Diodes

Standard Rectifier Diodes

Standard Diodes (Silicon PN Junction)
Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

Schottky Barrier Diodes (SBD)
Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

Super Barrier Rectifiers (SBR)
Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

Avalanche Diodes
Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.

Silicon Carbide (SiC) Diodes
SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.

Types of Rectifier Diodes

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