FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET

ON Semiconductor's FDMC8360L is optimized for on-state resistance

Image of Fairchild's FDMC86340 80 V N-Channel Shielded Gate Power Trench® MOSFETThis N-channel MOSFET is produced using ON Semiconductor advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized for on-state resistance and maintains superior switching performance.

Features
  • Shielded gate MOSFET technology
  • Max RDS(ON) = 2.1 mΩ at VGS = 10 V, LD = 27 A
  • Max RDS(ON) = 3.1 mΩ at VGS = 4.5 V, LD = 22 A
  • High-performance technology for extremely-low RDS(ON)
  • Termination is lead-free
  • 100% UIL tested
  • RoHS-compliant

40V N-Channel MOSFET

ImageManufacturer Part NumberDescriptionPart StatusFET TypeAvailable Quantity
MOSFET N-CH 40V 27A/80A POWER33FDMC8360LMOSFET N-CH 40V 27A/80A POWER33ActiveN-Channel6353 - ImmediateView Details
Published: 2013-09-17