J210-12, MMBFJ210-12 Datasheet by onsemi

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J211 / MMBFJ211 — N-Channel RF Amplifier
Publication Order Number:
J211-D74Z/D
© 1997 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
J211 / MMBFJ211
N-Channel RF Amplifier
Ordering Information
Figure 1. J211 Device Package Figure 2. MMBFJ211 Device Package
Part Number Top Mark Package Packing Method
J211-D74Z J211 TO-92 3L Ammo
MMBFJ211 62W SOT-23 3L Tape and Reel
1. Drain
123123
Straight Lead Bent Lead
TO-92
Bulk Packing Tape & Reel
Ammo Packing
2. Source
3. Gate
SOT-23
G
D
S
Note: Source & Drain
are interchangeable
Description
This device is designed for HF/VHF mixer/amplifier
and applications where process 50 is not adequate.
Sufficient gain and low-noise for sensitive receivers.
Sourced from process 90.
J211 / MMBFJ211 — N-Channel RF Amplifier
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Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width 300 μs
Symbol Parameter Value Unit
VDG Drain-Gate Voltage 25 V
VGS Gate-Source Voltage -25 V
IGF Forward Gate Current 10 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C
Symbol Parameter Max. Unit
J211(3) MMBFJ211(3)
PDTotal Device Dissipation 350 225 mW
Derate Above 25°C 2.8 1.8 mW/°C
RθJC Thermal Resistance, Junction-to-Case 125 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 357 556 °C/W
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0 -25 V
IGSS Gate Reverse Current VGS = 15 V, VDS = 0 -100 pA
VGS(off) Gate-Source Cut-Off Voltage VDS = 15 V, ID = 1.0 nA -2.5 -4.5 V
On Characteristics
IDSS Zero-Gate Voltage Drain Current(4) VDS = 15 V, VGS = 0 7.0 20 mA
Small Signal Characteristics
gfs Common Source Forward
Transconductance VDS = 15 V, VGS = 0,
f = 1.0 kHz 7000 12000 μmhos
goss Common Source Output
Conductance VDS = 15 V, VGS = 0,
f = 1.0 kHz 200 μmhos
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J211 / MMBFJ211 — N-Channel RF Amplifier
Typical Performance Characteristics
Figure 3. Parameter Interactions Figure 4. Common Drain-Source
Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics
Figure 7. Leakage Current vs. Voltage Figure 8. Noise Voltage vs. Frequency
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J211 / MMBFJ211 — N-Channel RF Amplifier
Typical Performance Characteristics (Continued)
Figure 9. Transconductance vs. Drain Current Figure 10. Output Conductance vs. Drain Current
Figure 11. Capacitance vs. Voltage
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J211 / MMBFJ211 — N-Channel RF Amplifier
Common Source Characteristics
Figure 12. Input Admittance Figure 13. Forward Transadmittance
Figure 14. Output Admittance Figure 15. Reverse Transadmittance
os)
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J211 / MMBFJ211 — N-Channel RF Amplifier
Common Gate Characteristics
Figure 16. Input Admittance Figure 17. Forward Transadmittance
Figure 18. Output Admittance Figure 19. Reverse Transadmittance
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J211 / MMBFJ211 — N-Channel RF Amplifier
Physical Dimensions
Figure 20. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form
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DETAIL A SCALE
J211 / MMBFJ211 — N-Channel RF Amplifier
Physical Dimensions (Continued)
Figure 21. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
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