2N7002 Datasheet by Diodes Incorporated

panes. ® ® 2N7002 1 015 Document number DSHSUS Rev 33 , 2 WWW.di0dES.CDm a
2N7002
Document number: DS11303 Rev. 33 - 2 1 of 5
www.diodes.com July 2013
© Diodes Incorporated
2N7002
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max ID max
TA = +25°C
60V 7.5 @ VGS = 5V 210mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Notes 3 & 4)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 5)
Part Number Compliance Case Packaging
2N7002-7-F Standard SOT23 3,000/Tape & Reel
2N7002-13-F Standard SOT23 10,000/Tape & Reel
2N7002Q-7-F Automotive SOT23 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code V12 (week 50, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V12 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code N P R S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View Equivalent Circuit To
p
View
D
GS
K72 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T SiteChengdu A/T Site
Source
Gate
Drain
Y
M
Y
K72
YM
K72
YM
ass as new TA TA DM 2N7002 2 at 5 Dncumenlnumber nsnaua Rev 3372 www.diodes.cnm e,
2N7002
Document number: DS11303 Rev. 33 - 2 2 of 5
www.diodes.com July 2013
© Diodes Incorporated
2N7002
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS 1.0M V
DGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Continuous Drain Current (Note 6) VGS = 10V Steady
State
TA = +25°C
TA = +85°C
TA = +100°C ID 170
120
105 mA
Continuous Drain Current (Note 7) VGS = 10V Steady
State
TA = +25°C
TA = +85°C
TA = +100°C ID 210
150
135 mA
Maximum Body Diode Forward Current (Note 7) Pulsed
Continuous IS 0.5
2 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 800 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) PD 370 mW
(Note 7) 540
Thermal Resistance, Junction to Ambient (Note 6) RθJA 348 °C/W
(Note 7) 241
Thermal Resistance, Junction to Case (Note 7) RθJC 91
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C IDSS 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ±10 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage VGS
(
th
)
1.0 2.5 V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance @ TJ = +25°C
@ TJ = +25°C
@ TJ = +125°C RDS(ON) 3.2
4.4
7.5
5.0
13.5
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
VGS = 10V, ID = 0.5A
On-State Drain Current ID
(
ON
)
0.5 1.0 A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 mS VDS =10V, ID = 0.2A
Diode Forward Voltage VSD 0.78 1.5 V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss 22 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss 11 25 pF
Reverse Transfer Capacitance Crss 2.0 5.0 pF
Gate resistance Rg  120 Ω VDS = 0V, VGS = 0V,
f = 1.0MHz
Total Gate Charge (VGS = 4.5V) Q
g
 223 pC VDS = 10V, ID = 250mA
Gate-Source Charge Q
g
s  82
Gate-Drain Charge Q
g
d  178
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time tD
on
2.8
ns VDD = 30V, ID = 0.2A,
RL = 150, VGEN = 10V,
RGEN = 25
Turn-On Rise Time t
r
3.0
Turn-Off Delay Time tD
off
 7.6
Turn-Off Fall Time tf  5.6
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout
7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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2N7002
Document number: DS11303 Rev. 33 - 2 3 of 5
www.diodes.com July 2013
© Diodes Incorporated
2N7002
0
0.2
0.4
0.6
0.8
1.0
01 2345
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
D
6
7
0.4 0.6 0.8 1.0
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
1.0
1.5
2.0
2.5
3.0
-55 -30 -5 20 45 70 95 120 145
T, JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs. Junction Temperature
j
°
V = 10V,
I = 200mA
GS
D
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
I = 50mA
D
I = 500mA
D
1
2
3
4
5
6
024681012141618
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
2
1
4
3
00.2
0.4 0.6 0.8 1
V
G
A
T
E S
O
U
R
C
E
C
U
R
R
E
N
T
(V)
GS,
I , DRAIN CURRENT (A)
Fig. 5 Typical Transfer Characteristics
D
6
5
8
7
10
9
0
50
100
150
200
250
300
350
025
50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
d
T , AMBIENT TEMPERATURE ( C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
A
°
400
Dimen /www am —> 2N7002 4 015 Document number DSHSUS Rev 33 , 2 WWW.di0deS.COm
2N7002
Document number: DS11303 Rev. 33 - 2 4 of 5
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© Diodes Incorporated
2N7002
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
2N7002 5 015 Document number DSHSUS Rev 33 , 2 WWW.diOdeS.COm
2N7002
Document number: DS11303 Rev. 33 - 2 5 of 5
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© Diodes Incorporated
2N7002
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