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MIC5014, MIC5015 Datasheet

Microchip Technology

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Datasheet

MIC5014/5015 Micrel, Inc.
June 2005 1 MIC5014/5015
Features
2.75V to 30V operation
100µA maximum supply current (5V supply)
•15µA typical off-state current
Internal charge pump
TTL compatible input
•Withstands 60V transient (load dump)
•Reverse battery protected to –20V
Inductive spike protected to –20V
•Overvoltage shutdown at 35V
Internal 15V gate protection
•Minimum external parts
•Operates in high-side or low-side configurations
•1µA control input pull-off
Inverting and noninverting versions
Applications
•Automotive electrical load control
•Battery-powered computer power management
Lamp control
•Heater control
•Motor control
•Power bus switching
General Description
MIC5014 and MIC5015 MOSFET drivers are designed for
gate control of N-channel, enhancement-mode, power
MOSFETs used as high-side or low-side switches.
The MIC5014/5 can sustain an on-state output indefinitely.
The MIC5014/5 operates from a 2.75V to 30V supply. In high-
side configurations, the driver can control MOSFETs that
switch loads of up to 30V. In low-side configurations, with
separate supplies, the maximum switched voltage is limited
only by the MOSFET.
The MIC5014/5 has a TTL compatible control input.
The MIC5014 is noninverting while the MIC5015 is inverting.
The MIC5014/5 features an internal charge pump that can
sustain a gate voltage greater than the available supply
voltage. The driver is capable of turning on a logic-level
MOSFET from a 2.75V supply or a standard MOSFET from a
5V supply. The gate-to-source output voltage is internally
limited to approximately 15V.
The MIC5014/5 is protected against automotive load dump,
reversed battery, and inductive load spikes of –20V.
The driver’s overvoltage shutdown feature turns off the exter-
nal MOSFET at approximately 35V to protect the load against
power supply excursions.
The MIC5014 is an improved pin-for-pin compatible replace-
ment in many MIC5011 applications.
The MIC5014/5 is available in plastic 8-pin DIP and 8-pin
SOIC pacakges.
MIC5014/5015
Low-Cost High- or Low-Side MOSFET Driver
Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
Load
MIC5014
Control Input
OFF
ON
1
2
3
4
8
7
6
5IRLZ24
+3V to +4V
NC
GateGnd
Source
Input
V+
NC
NC
10µF
Figure 1. 3V “Sleep-Mode” Switch
with a Logic-Level MOSFET
Typical Application
MIC5014/5015 Micrel, Inc.
MIC5014/5015 2June 2005
Block Diagram
Charge Pump
V+ (1)
*Input (2)
Ground (4)
Source (3)
Gate (5)
15V
* Only on the inverting version
Pin Description
Pin Number Pin Name Pin Function
1V+Supply. Must be decoupled to isolate from large transients caused by the
power MOSFET drain. 10µF is recommended close to pins 1 and 4.
2Input Turns on power MOSFET when taken above (or below) threshold (1.0V
typical). Pin 2 requires ~ 1µA to switch.
3Source Connects to source lead of power MOSFET and is the return for the gate
clamp zener. Pin 3 can safely swing to –20V when turning off inductive
loads.
4Ground
5Gate Drives and clamps the gate of the power MOSFET.
6, 7, 8 NC Not internally connected.
Ordering Information
Part Number Temperature
Standard Pb-Free Range Configuration Package
MIC5014BM MIC5014YM –40ºC to +85ºC Non-Inverting 8-Pin SOIC
MIC5014BN MIC5014YN –40ºC to +85ºC Non-Inverting 8-Pin PDIP
MIC5015BM MIC5015YM –40ºC to +85ºC Inverting 8-Pin SOIC
MIC5015BN MIC5015YN –40ºC to +85ºC Inverting 8-Pin PDIP
MIC5014/5015 Micrel, Inc.
June 2005 3 MIC5014/5015
Absolute Maximum Ratings (Notes 1,2) Operating Ratings (Notes 1,2)
Electrical Characteristics (Note 3) TA = –40°C to +85°C unless otherwise specified
Supply Voltage ............................................... –20V to 60V
Input Voltage .....................................................–20V to V+
Source Voltage..................................................–20V to V+
Source Current .......................................................... 50mA
Gate Voltage .................................................. –20V to 50V
Junction Temperature .............................................. 150°C
θJA (Plastic DIP) ..................................................... 160°C/W
θJA (SOIC) ............................................................. 170°C/W
Ambient Temperature: ................................ –40°C to +85°C
Storage Temperature ................................ –65°C to +150°C
Lead Temperature...................................................... 260°C
(max soldering time: 10 seconds)
Supply Voltage (V+)......................................... 2.75V to 30V
Parameter Conditions Min Typ Max Units
Supply Current V+ = 30V VIN De-Asserted (Note 5) 10 25 µA
VIN Asserted (Note 5) 5.0 10 mA
V+ = 5V VIN De-Asserted 10 25 µA
VIN Asserted 60 100
V+ = 3V VIN De-Asserted 10 25 µA
VIN Asserted 25 35
Logic Input Voltage Threshold 3.0V V+ 30V Digital Low Level 0.8
VIN TA = 25°CDigital High Level 2.0 V
Logic Input Current 3.0V V+ 30V VIN Low –2.0 0 µA
MIC5014 (non-inverting) VIN High 1.0 2.0
Logic Input Current 3.0V V+ 30V VIN Low –2.0 –1.0 µA
MIC5015 (inverting) VIN High –1.0 2.0
Input Capacitance 5.0 pF
Gate Enhancement 3.0V V+ 30V VIN Asserted 4.0 17 V
VGATE – VSUPPLY
Zener Clamp 8.0V V+ 30V VIN Asserted 13 15 17 V
VGATE – VSOURCE
Gate Turn-on Time, tON V+ = 4.5V VIN switched on, measure 2.5 8.0 ms
(Note 4) CL = 1000pF time for VGATE to reach V+ + 4V
V+ = 12V As above, measure time for 90 140 µs
CL = 1000pF VGATE to reach V+ + 4V
Gate Turn-off Time, tOFF V+ = 4.5V VIN switched off, measure 6.0 30 µs
(Note 4) CL = 1000pF time for VGATE to reach 1V
V+ = 12V As above, measure time for 6.0 30 µs
CL = 1000pF VGATE to reach 1V
Overvoltage Shutdown 35 37 41 V
Threshold
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply
when operating the device beyond its specified Operating Ratings.
Note 2: The MIC5014/5015 is ESD sensitive.
Note 3: Minimum and maximum Electrical Characteristics are 100% tested at TA = 25°C and TA = 85°C, and 100% guaranteed over the
entire operating temperature range. Typicals are characterized at 25°C and represent the most likely parametric norm.
Note 4: Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see
Applications Information.
Note 5: “Asserted” refers to a logic high on the MIC5014 and a logic low on the MIC5015.
MIC5014/5015 Micrel, Inc.
MIC5014/5015 4June 2005
Typical Characteristics All data measured using FET probe to minimize resistive loading
0
1
2
3
4
5
6
051015 20 25 30
SUPPLY CURRENT (mA)
SUPPLY VOLTAGE (V)
Supply Current
(Output Asserted)
0
5
10
15
20
051015 20 25 30
GATE ENHANCEMENT (V)
SUPPLY VOLTAGE (V)
Gate Enhancement
vs. Supply Voltage
Gate Enhancement =
VGATE – VSUPPLY
0
50
100
150
200
250
300
0246810
TURN-ON TIME (µs)
GATE CAPACITANCE (nF)
High-Side Turn-On Time
vs. Gate Capacitance
Supply = 12V
0.01
0.1
1
10
100
0481216 20 24 28
TURN-ON TIME (ms)
SUPPLY VOLTAGE (V)
High-Side Turn-On Time
Until Gate = Supply + 4V
CGATE = 1300pF
0.01
0.1
1
10
100
0481216202428
TURN-ON TIME (ms)
SUPPLY VOLTAGE (V)
High-Side Turn-On Time
Until Gate = Supply + 4V
C
GATE
= 3000pF
0
20
40
60
80
100
120
140
160
180
-60 -30 0 30 60 90 120 150
HIGH-SIDE TURN-ON TIME (µs)
AMBIENT TEMPERATURE (°C)
High-Side Turn-On Time
vs. Temperature
Supply = 12V
C
GATE
= 1000pF
0.01
0.1
1
10
100
051015 20 25 30
TURN-ON TIME (ms)
SUPPLY VOLTAGE (V)
High-Side Turn-On Time
Until Gate = Supply + 10V
C
GATE
= 1300pF
0.01
0.1
1
10
100
051015 20 25 30
TURN-ON TIME (ms)
SUPPLY VOLTAGE (V)
High-Side Turn-On Time
Until Gate = Supply + 10V
CGATE = 3000pF
0
2
4
6
8
10
051015 20 25 30
TURN-OFF TIME (µs)
SUPPLY VOLTAGE (V)
High-Side Turn-Off Time
Until Gate = 1V
CGATE = 3000pF
CGATE =
1300pF
1
10
100
1000
051015
OUTPUT CURRENT (µA)
GATE-TO-SOURCE VOLTAGE (V)
Charge-Pump
Output Current
Source connected
to supply: supply
voltage as noted
3V
5V
12V
28V
1
10
100
1000
10000
051015
OUTPUT CURRENT (µA)
GATE-TO-SOURCE VOLTAGE (V)
Charge-Pump
Output Current
Source connected
to ground: supply
voltage as noted
3V
5V
12V
28V
1
10
100
1000
10000
051015 20 25 30
TURN-ON TIME (µs)
SUPPLY VOLTAGE (V)
Low-Side Turn-On Time
Until Gate = 4V
CGATE = 3000pF
CGATE = 1300pF
MIC5014/5015 Micrel, Inc.
June 2005 5 MIC5014/5015
Load
MIC5014
Control Input
OFF
ON
1
2
3
4
8
7
6
5
+3V to +30V
NC
GateGnd
Source
Input
V+
NC
NC
10µF
Figure 2. Low Side Driver
not use a socket for the MOSFET. If the MOSFET is a TO-220
type package, make high current connections to the drain tab.
Wiring losses have a profound effect on high-current circuits.
A floating milliohmeter can identify connections that are con-
tributing excess drop under load.
Low Voltage Testing
As the MIC5014/MIC5015 have relatively high output imped-
ances, a normal oscilloscope probe will load the device. This
is especially pronounced at low voltage operation. It is recom-
mended that a FET probe or unity gain buffer be used for all
testing.
Circuit Topologies
The MIC5014 and MIC5015 are well suited for use with
standard power MOSFETs in both low and high side driver
configurations. In addition, the lowered supply voltage re-
quirements of these devices make them ideal for use with logic
level FETs in high side applications with a supply voltage of 3
to 4V. (If higher supply voltages [>4V] are used with logic level
FETs, an external zener clamp must be supplied to ensure
that the maximum VGS rating of the logic FET [10V] is not
exceeded.) In addition, a standard IGBT can be driven using
these devices.
Choice of one topology over another is usually based on
speed vs. safety. The fastest topology is the low side driver,
however, it is not usually considered as safe as high side
driving as it is easier to accidentally short a load to ground than
to VCC. The slowest, but safest topology is the high side
driver; with speed being inversely proportional to supply
voltage. It is the preferred topology for most military and
automotive applications. Speed can be improved consider-
ably by bootstrapping from the supply.
All topologies implemented using these devices are well
suited to driving inductive loads, as either the gate or the
source pin can be pulled 20V below ground with no effect.
External clamp diodes are unnecessary, except for the case
in which a transient may exceed the overvoltage trip point.
High Side Driver (Figure 1) The high side topology shown
here is an implementation of a “sleep-mode” switch for a
laptop or notebook computer which uses a logic level FET. A
standard power FET can easily be substituted when supply
voltages above 4V are required.
Applications Information
Functional Description
The MIC5014 is functionally and pin for pin compatible with
the MIC5011, except for the omission of the optional speed-
up capacitor pins, which are available on the MIC5011. The
MIC5015 is an inverting configuration of the MIC5014.
The internal functions of these devices are controlled via a
logic block (refer to block diagram) connected to the control
input (pin 2). When the input is off (low for the MIC5014, and
high for the MIC5015), all functions are turned off, and the
gate of the external power MOSFET is held low via two N-
channel switches. This results in a very low standby current;
15µA typical, which is necessary to power an internal bandgap.
When the input is driven to the “ON” state, the N-channel
switches are turned off, the charge pump is turned on, and the
P-channel switch between the charge pump and the gate
turns on, allowing the gate of the power FET to be charged.
The op amp and internal zener form an active regulator which
shuts off the charge pump when the gate voltage is high
enough. This is a feature not found on the MIC5011.
The charge pump incorporates a 100kHz oscillator and on-
chip pump capacitors capable of charging a 1,000pF load in
90µs typical. In addition to providing active regulation, the
internal 15V zener is included to prevent exceeding the VGS
rating of the power MOSFET at high supply voltages.
The MIC5014/15 devices have been improved for greater
ruggedness and durability. All pins can withstand being
pulled 20V below ground without sustaining damage, and the
supply pin can withstand an overvoltage transient of 60V for
1s. An overvoltage shutdown has also been included, which
turns off the device when the supply exceeds 35V.
Construction Hints
High current pulse circuits demand equipment and assembly
techniques that are more stringent than normal, low current
lab practices. The following are the sources of pitfalls most
often encountered during prototyping: Supplies : Many bench
power supplies have poor transient response. Circuits that
are being pulse tested, or those that operate by pulse-width
modulation will produce strange results when used with a
supply that has poor ripple rejection, or a peaked transient
response. Always monitor the power supply voltage that
appears at the drain of a high side driver (or the supply side
of the load for a low side driver) with an oscilloscope. It is not
uncommon to find bench power supplies in the 1kW class that
overshoot or undershoot by as much as 50% when pulse
loaded. Not only will the load current and voltage measure-
ments be affected, but it is possible to overstress various
components, especially electrolytic capacitors, with possibly
catastrophic results. A 10µF supply bypass capacitor at the
chip is recommended. Residual resistances: Resistances
in circuit connections may also cause confusing results. For
example, a circuit may employ a 50m power MOSFET for
low voltage drop, but unless careful construction techniques
are used, one could easily add 50 to 100m resistance. Do
MIC5014/5015 Micrel, Inc.
MIC5014/5015 6June 2005
the short is removed, feedback to the input pin insures that the
MIC5014 will turn back on. This output can also be level
shifted and sent to an I/O port of a microcontroller for intelli-
gent control.
Current Shunts (RS). Low valued resistors are necessary for
use at RS. Resistors are available with values ranging from 1
to 50m, at 2 to 10W. If a precise overcurrent trip point is
not necessary, then a nonprecision resistor or even a mea-
sured PCB trace can serve as RS. The major cause of drift in
resistor values with such resistors is temperature coefficient;
the designer should be aware that a linear, 500 ppm/°C
change will contribute as much as 10% shift in the overcurrent
trip point. If this is not acceptable, a power resistor designed
for current shunt service (drifts less than 100 ppm/°C), or a
Kelvin-sensed resistor may be used.
† Suppliers of Precision Power Resistors:
Dale Electronics, Inc., 2064 12th Ave., Columbus, NE 68601. (402) 565-
3131
International Resistive Co., P.O. Box 1860, Boone,NC 28607-1860.
(704) 264-8861
Isotek Corp., 566 Wilbur Ave. Swansea, MA 02777. (508) 673-2900
Kelvin, 14724 Ventura Blvd., Ste. 1003, Sherman Oaks, CA 91403-3501.
(818) 990-1192
RCD Components, Inc., 520 E. Industrial Pk. Dr., Manchester, NH 03103.
(603) 669-0054
Ultronix, Inc., P.O. Box 1090, Grand Junction, CO 81502 (303) 242-0810
High Side Driver With Delayed Current Sense (Figure 5)
Delay of the overcurrent detection to accomodate high inrush
loads such as incandescent or halogen lamps can be accom-
plished by adding an LM3905 timer as a one shot to provide
an open collector pulldown for the comparator output such
that the control input of the MIC5015 stays low for a preset
amount of time without interference from the current sense
circuitry. Note that an MIC5015 must be used in this applica-
tion (figure 5), as an inverting control input is necessary. The
delay time is set by the RC time constant of the external
components on pins 3 and 4 of the timer; in this case, 6ms was
chosen.
An LM3905 timer was used instead of a 555 as it provides a
clean transition, and is almost impossible to make oscillate.
Good bypassing and noise immunity is essential in this circuit
to prevent spurious op amp oscillations.
Low Side Driver (Figure 2) A key advantage of this topology,
as previously mentioned, is speed. The MOSFET gate is
driven to near supply immediately when the MIC5014/15 is
turned on. Typical circuits reach full enhancement in 50µs or
less with a 15V supply.
Bootstrapped High Side Driver (Figure 3) The turn-on time of
a high side driver can be improved to faster than 40µs by
bootstrapping the supply with the MOSFET source. The
Schottky barrier diode prevents the supply pin from dropping
more than 200mV below the drain supply and improves turn-
on time. Since the supply current in the “off” state is only a
small leakage, the 100nF bypass capacitor tends to remain
charged for several seconds after the MIC5014/15 is turned
off. Faster speeds can be obtained at the expense of supply
voltage (the overvoltage shutdown will turn the part off when
the bootstrapping action pulls the supply pin above 35V) by
using a larger capacitor at the junction of the two 1N4001
diodes. In a PWM application (this circuit can be used for either
PWM’ed or continuously energized loads), the chip supply is
sustained at a higher potential than the system supply, which
improves switching time.
Figure 3. Bootstrapped Hgh-Side Driver
High Side Driver With Current Sense (Figure 4) Although no
current sense function is included on the MIC5014/15 devices,
a simple current sense function can be realized via the addition
of one more active component; an LM301A op amp used as
a comparator. The positive rail of the op amp is tied to V+, and
the negative rail is tied to ground. This op amp was chosen as
it can withstand having input transients that swing below the
negative rail, and has common mode range almost to the
positive rail.
The inverting side of this comparator is tied to a voltage divider
which sets the voltage to V+ – VTRIP . The non inverting side
is tied to the node between the drain of the FET and the sense
resistor. If the overcurrent trip point is not exceeded , this node
will always be pulled above V+ – VTRIP, and the output of the
comparator will be high which feeds the control input of the
MIC5014 (polarities should be reversed if the MIC5015 is
used). One the overcurrent trip point has been reached, the
comparator will go low, which shuts off the MIC5014. When the
Load
MIC5014
1
2
3
4
8
7
6
5
NC
GateGnd
Source
Input
V+
NC
NC
10µF
R4
1k
RS
0.06
12V
On
R1
1k
R2
120k
LM301A
2.2k
ITRIP = VTRIP/RS
= 1.7A
VTRIP = R1/(R1+R2)
Load
MIC5015
Control Input
OFF
ON
1
2
3
4
8
7
6
5
+2.75V to +30V
NC
GateGnd
Source
Input
V+
NC
NC
1µF
100nF
1N4001 (2)
1N5817
1RF540
Figure 4. High Side Driver with Overcurrent Shutdown
MIC5014/5015 Micrel, Inc.
June 2005 7 MIC5014/5015
Typical Applications
Variable Supply Low Side Driver for Motor Speed Control
(Figure 6) The internal regulation in the MIC5014/15 allows
a steady gate enhancement to be supplied while the
MIC5014/15 supply varies from 5V to 30V, without damaging
the internal gate to source zener clamp. This allows the speed
of the DC motor shown to be varied by varying the supply
voltage.
Figure 6: DC Motor Speed Control/Driver
Solenoid Valve Driver (Figure 7) High power solenoid valves
are used in many industrial applications requiring the timed
dispensing of chemicals or gases. When the solenoid is
activated, the valve opens (or closes), releasing (or stopping)
fluid flow. A solenoid valve, like all inductive loads, has a
considerable “kickback” voltage when turned off, as current
cannot change instantaneously through an inductor. In most
applications, it is acceptable to allow this voltage to momen-
tarily turn the MOSFET back on as a way of dissipating the
inductor’s current. However, if this occurs when driving a
solenoid valve with a fast switching speed, chemicals or
gases may be inadvertantly be dispensed at the wrong time
with possibly disasterous consequences. Also, too large of
a kickback voltage (as is found in larger solenoids) can
damage the MIC5014 or the power FET by forcing the Source
node below ground (the MIC5014 can be driven up to 20V
below ground before this happens). A catch diode has been
included in this design to provide an alternate route for the
inductive kickback current to flow. The 5k resistor in series
with this diode has been included to set the recovery time of
the solenoid valve.
Figure 7: Solenoid Valve Driver
MIC5014
OFF
ON
1
2
3
4
8
7
6
5IRF540
V
CC
= +5V to +30V
NC
GateGnd
Source
Input
V+
NC
NC
M
MIC5015
ON
OFF
1
2
3
4
8
7
6
5IRFZ40
24V
NC
GateGnd
Source
Input
V+
NC
NC
5k
1N4005
ASCO
8320A
Solenoid
Figure 5. High Side Driver with Delayed Overcurrent Shutdown
Load
MIC5014
1
2
3
4
8
7
6
5
NC
GateGnd
Source
Input
V+
NC
NC
10µF
R4
1k
R
S
0.06
12V
On
R1
1k
R2
120kLM301A
2.2k
0.01µF
LM3905N
1
2
3
4
8
7
6
5
Logic
V+Gnd
R/C
V
REF
Trigger
Emit
Coll
12V
1000pF
1k
MIC5014/5015 Micrel, Inc.
MIC5014/5015 8June 2005
Motor Driver With Stall Shutdown (Figure 10) Tachometer
feedback can be used to shut down a motor driver circuit when
a stall condition occurs. The control switch is a 3-way type; the
“START” position is momentary and forces the driver ON.
When released, the switch returns to the “RUN” position, and
the tachometer’s output is used to hold the MIC5014 input ON.
If the motor slows down, the tach output is reduced, and the
MIC5014 switches OFF. Resistor “R” sets the shutdown
threshold.
Figure 10. Motor Stall Shutdowm
Simple DC-DC Converter (Figure 11) The simplest applica-
tion for the MIC5014 is as a basic one-chip DC-DC converter.
As the output (Gate) pin has a relatively high impedance, the
output voltage shown will vary significantly with applied load.
Incandescent/Halogen Lamp Driver (Figure 8) The combi-
nation of an MIC5014/5015 and a power FET makes an
effective driver for a standard incandescent or halogen lamp
load. Such loads often have high inrush currents, as the
resistance of a cold filament is less than one-tenth as much as
when it is hot. Power MOSFETs are well suited to this
application as they have wider safe operating areas than do
power bipolar transistors. It is important to check the SOA
curve on the data sheet of the power FET to be used against
the estimated or measured inrush current of the lamp in
question prior to prototyping to prevent “explosive” results.
If overcurrent sense is to be used, first measure the duration
of the inrush, then use the topology of Figure 5 with the RC of
the timer chosen to accomodate the duration with suitable
guardbanding.
Figure 8. Halogen Lamp Driver
Relay Driver (Figure 9) Some power relay applications re-
quire the use of a separate switch or drive control, such as in
the case of microprocessor control of banks of relays where
a logic level control signal is used, or for drive of relays with
high power requirements. The combination of an MIC5014/
5015 and a power FET also provides an elegant solution to
power relay drive.
Figure 9: Relay Driver
MIC5014
Control Input
OFF
ON
1
2
3
4
8
7
6
5IRF540
12V
NC
GateGnd
Source
Input
V+
NC
NC
10µF
OSRAM
HLX64623
MIC5014
Control Input
OFF
ON
1
2
3
4
8
7
6
5IRF540
12V
NC
GateGnd
Source
Input
V+
NC
NC
10µF
Guardian Electric
1725-1C-12D
MIC5014
1
2
3
4
8
7
6
5IRFZ44
12V
NC
GateGnd
Source
Input
V+
NC
NC
10µF
MT
R
330k
330k
1N4148
Figure 11. DC - DC Converter
MIC5014
1
2
3
4
8
7
6
5
NC
GateGnd
Source
Input
V+
NC
NC
10µF
5V
V
OUT
= 12V
MIC5014/5015 Micrel, Inc.
June 2005 9 MIC5014/5015
High Side Driver With Load Protection (Figure 12) Al-
though the MIC5014/15 devices are reverse battery pro-
tected, the load and power FET are not, in a typical high side
configuration. In the event of a reverse battery condition, the
internal body diode of the power FET will be forward biased.
This allows the reversed supply access to the load.
Push-Pull Driver With No Cross-Conduction (Figure 13)
As the turn-off time of the MIC5014/15 devices is much faster
than the turn-on time, a simple push-pull driver with no cross
conduction can be made using one MIC5014 and one
MIC5015. The same control signal is applied to both inputs;
the MIC5014 turns on with the positive signal, and the
MIC5015 turns on when it swings low.
This scheme works with no additional components as the
relative time difference between the rise and fall times of the
MIC5014 is large. However, this does mean that there is
Figure 13: Push-Pull Driver
The addition of a Schottky diode between the supply and the
FET eliminates this problem. The MBR2035CT was chosen
as it can withstand 20A continuous and 150A peak,
and should survive the rigors of an automotive environment.
The two diodes are paralleled to reduce switch loss (forward
voltage drop).
Figure 12: High Side Driver WIth Load Protection
considerable deadtime (time when neither driver is turned on).
If this circuit is used to drive an inductive load, catch diodes
must be used on each half to provide an alternate path for the
kickback current that will flow during this deadtime.
This circuit is also a simple half H-bridge which can be driven
with a PWM signal on the input for SMPS or motor drive
applications in which high switching frequencies are not
desired.
Load
MIC5014
Control Input
OFF
ON
1
2
3
4
8
7
6
5IRF540
12V
NC
GateGnd
Source
Input
V+
NC
NC
10µF MBR2035CT
MIC5014
Control Input
1
2
3
4
8
7
6
5IRFZ40
12V
NC
GateGnd
Source
Input
V+
NC
NC
10µF
MIC5015
1
2
3
4
8
7
6
5
NC
GateGnd
Source
Input
V+
NC
NC
12V
IRFZ40
V
OUT
MIC5014/5015 Micrel, Inc.
MIC5014/5015 10 June 2005
Package Information
0.380 (9.65)
0.370 (9.40)
0.135 (3.43)
0.125 (3.18)
PIN 1
DIMENSIONS:
INCH (MM)
0.018 (0.57)
0.100 (2.54)
0.013 (0.330)
0.010 (0.254)
0.300 (7.62)
0.255 (6.48)
0.245 (6.22)
0.380 (9.65)
0.320 (8.13)
0.0375 (0.952)
0.130 (3.30)
8-Pin Plastic DIP (N)
45°
0°–8°
0.244 (6.20)
0.228 (5.79)
0.197 (5.0)
0.189 (4.8) SEATING
PLANE
0.026 (0.65)
MAX)
0.010 (0.25)
0.007 (0.18)
0.064 (1.63)
0.045 (1.14)
0.0098 (0.249)
0.0040 (0.102)
0.020 (0.51)
0.013 (0.33)
0.157 (3.99)
0.150 (3.81)
0.050 (1.27)
TYP
PIN 1
DIMENSIONS:
INCHES (MM)
0.050 (1.27)
0.016 (0.40)
8-Pin SOP (M)
MIC5014/5015 Micrel, Inc.
June 2005 11 MIC5014/5015
MIC5014/5015 Micrel, Inc.
MIC5014/5015 12 June 2005
MICREL INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA
TEL + 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB http://www.micrel.com
This information furnished by Micrel in this data sheet is believed to be accurate and reliable. However no responsibility is assumed by Micrel for its use.
Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can
reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into
the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser’s
use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaser agrees to fully indemnify
Micrel for any damages resulting from such use or sale.
© 1997 Micrel Incorporated

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