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AP2114 Series

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Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
1
General Description
The AP2114 is CMOS process low dropout linear
regulator with enable function, the regulator delivers
a guaranteed 1A (Min) continuous load current.
The AP2114 features low power consumption.
The AP2114 is available in 1.2V, 1.5V, 1.8V, 2.5V
and 3.3V regulator output and 0.8V to 5V adjustable
output, and available in excellent output accuracy
±1.5%, it is also available in an excellent load
regulation and line regulation performance.
The AP2114 is available in standard packages of
SOT-223, TO-252-2 (1), TO-252-2 (3), TO-252-2 (4),
TO-263-3, SOIC-8 and PSOP-8.
Features
• Output Voltage Accuracy: ±1.5%
• Output Current: 1A (Min)
• Fold-back Short Current Protection: 50mA
Low Dropout Voltage (3.3V): 450mV (Typ)
@IOUT=1A
• Stable with 4.7μF Flexible Cap: Ceramic,
Tantalum and Aluminum Electrolytic
• Excellent Line Regulation: 0.02%/V (Typ),
0.1%/V (Max) @ IOUT=30mA
• Excellent Load Regulation: 0.2%A (Typ) @
IOUT=1mA to 1A
• Low Quiescent Current: 60μA (1.2V/1.5V/1.8V
/2.5V/ADJ)
• Low Output Noise: 30μVRMS
• PSRR: 68dB @ Freq=1KHz (1.2V/1.5V/1.8V
/ADJ)
• OTSD Protection
Operating Temperature Range: -40°C to 85°C
• ESD: MM 400V, HBM 4000V
Applications
• LCD Monitor
• LCD TV
• STB
Figure 1. Package Types of AP2114
SOT-223 TO-263-3 TO-252-2 (1)
TO-252-2 (3) TO-252-2 (4) SOIC-8 PSOP-8
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
2
Pin Configuration
H/HA Package S Package
(SOT-223) (TO-263-3)
H HA
D/DA Package
D DA
(TO-252-2 (1)) (TO-252-2 (3)) (TO-252-2 (1)) (TO-252-2 (3))
(TO-252-2 (4)) (TO-252-2 (4))
M Package MP Package
(SOIC-8) (PSOP-8)
For Fixed Versions For Adjustable Version For Fixed Versions For Adjustable Version
Figure 2. Pin Configuration of AP2114 (Top View)
1
2
3
GND
VIN
VOUTVOUT
1
2
3
GND
VIN
VOUT
GND
1
2
3
4
8
7
6
5
GND
VOUT
GND
VIN
EN
GND
GND
GND
1
2
3
4
8
7
6
5
GND
VOUT
GND
VIN
EN
GND
GND
GND
1
2
3
4
8
7
6
5
VIN
EN
VOUT
GND
ADJ
GNDGND
GND
VIN
EN
VOUT
GND
ADJ
GNDGND
GND
1
2
3
4
8
7
6
5
1
2
3VIN
VOUT
GND
VOUT
1
2
3
VIN
VOUT
GND
GND
1
2
3
VIN
VOUT
GND
GND
1
2
3VIN
VOUT
GND
VOUT
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
3
Pin Descriptions
Pin Number
Pin
Name
Function
SOT-223 (H),
TO-263-3,
TO-252-2 (1) (D)
TO-252-2 (3) (D)
TO-252-2 (4) (D)
SOT-223 (HA),
TO-252-2 (1) (DA)
TO-252-2 (3) (DA)
TO-252-2 (4) (DA)
SOIC-8,
PSOP-8
(Fixed)
SOIC-8,
PSOP-8
(ADJ)
1 2 1, 3, 5, 6, 7 2, 3, 5, 7 GND Ground
2 3 2 8 VOUT Regulated Output
3 1 4 1 VIN Input Voltage Pin
8 4 EN
Chip Enable, H–Normal
Work, L– Shutdown Output
6 ADJ Adjust Output
Functional Block Diagram
For Fixed Versions
Shutdown
Logic
Thermal
Shutdown Foldback
Current Limit
VREF
GND
EN VIN
3MΩ
VOUT
A (B)
A: SOT-223 , TO-263-3, TO-252- 2 (1)/(3
B: SOIC-8, PSOP-8
(8)
1 (1, 3, 5, 6, 7)
2 (2)
3 (4)
{2}
{3}
{1}
{C} (H)
C: SOT-223 ,
(HA) TO-252- 2 (1)/(3 (DA)
4)(D))/(
)/(4)
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
4
Functional Block Diagram (Continued)
For ADJ Version
Figure 3. Functional Block Diagram of AP2114
Shutdown
Logic
Thermal
Shutdown Foldback
Current Limit
VREF
GND
EN VIN
3Ω
VOUT
SOIC-8, PSOP-8
8
1
ADJ
4
6
M
2, 3, 5, 7
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
5
Ordering Information
AP2114 -
Circuit Type G1: Green
Package Temperature
Range Output
Voltage Part Number Marking ID Packing
Type
SOT-223 -40 to 85°C
1.2V (H) AP2114H-1.2TRG1 GH12C Tape & Reel
1.5V (H) AP2114H-1.5TRG1 GH16G Tape & Reel
1.8V (H) AP2114H-1.8TRG1 GH12D Tape & Reel
2.5V (H) AP2114H-2.5TRG1 GH14C Tape & Reel
3.3V (H) AP2114H-3.3TRG1 GH12E Tape & Reel
SOT-223 -40 to 85°C
1.2V (HA) AP2114HA-1.2TRG1 GH13B Tape & Reel
1.5V (HA) AP2114HA-1.5TRG1 GH16H Tape & Reel
1.8V (HA) AP2114HA-1.8TRG1 GH14D Tape & Reel
2.5V (HA) AP2114HA-2.5TRG1 GH14E Tape & Reel
3.3V (HA) AP2114HA-3.3TRG1 GH14F Tape & Reel
TO-252-2 (1)/
TO-252-2 (3)/
TO-252-2 (4)
-40 to 85°C
1.2V (D) AP2114D-1.2TRG1 AP2114D-1.2G1 Tape & Reel
1.5V (D) AP2114D-1.5TRG1 AP2114D-1.5G1 Tape & Reel
1.8V (D) AP2114D-1.8TRG1 AP2114D-1.8G1 Tape & Reel
2.5V (D) AP2114D-2.5TRG1 AP2114D-2.5G1 Tape & Reel
3.3V (D) AP2114D-3.3TRG1 AP2114D-3.3G1 Tape & Reel
TO-252-2 (1)/
TO-252-2 (3)/
TO-252-2 (4)
-40 to 85°C
1.2V (DA) AP2114DA-1.2TRG1 AP2114DA-1.2G1 Tape & Reel
1.5V (DA) AP2114DA-1.5TRG1 AP2114DA-1.5G1 Tape & Reel
1.8V (DA) AP2114DA-1.8TRG1 AP2114DA-1.8G1 Tape & Reel
2.5V (DA) AP2114DA-2.5TRG1 AP2114DA-2.5G1 Tape & Reel
3.3V (DA) AP2114DA-3.3TRG1 AP2114DA-3.3G1 Tape & Reel
TO-263-3 -40 to 85°C
1.2V AP2114S-1.2TRG1 AP2114S-1.2G1 Tape & Reel
1.5V AP2114S-1.5TRG1 AP2114S-1.5G1 Tape & Reel
1.8V AP2114S-1.8TRG1 AP2114S-1.8G1 Tape & Reel
2.5V AP2114S-2.5TRG1 AP2114S-2.5G1 Tape & Reel
3.3V AP2114S-3.3TRG1 AP2114S-3.3G1 Tape & Reel
SOIC-8 -40 to 85°C
1.2V AP2114M-1.2TRG1 2114M-1.2G1 Tape & Reel
1.5V AP2114M-1.5TRG1 2114M-1.5G1 Tape & Reel
1.8V AP2114M-1.8TRG1 2114M-1.8G1 Tape & Reel
2.5V AP2114M-2.5TRG1 2114M-2.5G1 Tape & Reel
3.3V AP2114M-3.3TRG1 2114M-3.3G1 Tape & Reel
ADJ AP2114M-ADJG1 2114M-ADJG1 Tube
AP2114M-ADJTRG1 2114M-ADJG1 Tape & Reel
Blank: Tube
TR: Tape & Reel
1.2: Fixed Output 1.2V
1.5: Fixed Output 1.5V
1.8: Fixed Output 1.8V
2.5: Fixed Output 2.5V
3.3: Fixed Output 3.3V
ADJ: ADJ Output
Package
H/HA: SOT-223
D/DA: TO-252-2 (1)/(3)/(4)
S: TO-263-3
M: SOIC-8
MP: PSOP-8
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
6
Ordering Information (Continued)
Package Temperature
Range Output
Voltage Part Number Marking ID Packing
Type
PSOP-8 -40 to 85°C
1.2V AP2114MP-1.2TRG1 2114MP-1.2G1 Tape & Reel
1.5V AP2114MP-1.5TRG1 2114MP-1.5G1 Tape & Reel
1.8V AP2114MP-1.8TRG1 2114MP-1.8G1 Tape & Reel
2.5V AP2114MP-2.5TRG1 2114MP-2.5G1 Tape & Reel
3.3V AP2114MP-3.3TRG1 2114MP-3.3G1 Tape & Reel
ADJ AP2114MP-ADJG1 2114MP-ADJG1 Tube
AP2114MP-ADJTRG1 2114MP-ADJG1 Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and Green.
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
7
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Power Supply Voltage VIN 6.5 V
Operating Junction Temperature
Range TJ 150 ºC
Storage Temperature Range TSTG -65 to 150 ºC
Lead Temperature (Soldering, 10sec) TLEAD 260 ºC
Thermal Resistance Junction to
Ambient(No Heatsink) θJA
SOIC-8 144
°C/W
PSOP-8 143
SOT-223 128
TO-252-2 (1)/
TO-252-2 (3)/
TO-252-2 (4)
90
TO-263-3 73
ESD (Machine Model) 400 V
ESD (Human Body Model) 4000 V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Voltage VIN 2.5 6.0 V
Operating Ambient Temperature
Range TA -40 85 °C
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
8
Electrical Characteristics
AP2114-1.2 Electrical Characteristics (Note 2)
(VIN=2.5V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OCTA85OC
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage VOUT V
IN =2.5V, 1mA IOUT 30mA VOUT
×98.5% 1.2 VOUT
×101.5% V
Input Voltage VIN 6.0 V
Maximum Output Current IOUT(MAX) V
IN=2.5V, VOUT=1.182V to 1.218V 1 A
Load Regulation
VOUT/VOUT
IOUT VIN=2.5V, 1mA IOUT 1A 0.2 1 %/A
Line Regulation VOUT/VOUT
VIN
2.5VVIN6V, IOUT=30mA -0.1 0.02 0.1 %/V
Dropout Voltage VDROP I
OUT=1.0A 1200 1300 mV
Quiescent Current IQ V
IN=2.5V, IOUT=0mA 60 75
μA
Power Supply Rejectio
n
Ratio PSRR
Ripple 1Vp-p
VIN=2.5V,
IOUT=100mA
f=100Hz 68
dB
f=1KHz 68
Output Voltage
Temperature Coefficient
VOUT/VOUT
T IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE 10Hz f 100kHz (No Load) 30 μVRMS
VEN High Voltage VIH Enable logic high, regulator on 1.5
V
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current ISTD V
IN=2.5V, VEN in OFF mode 0.01 1.0 μA
Start-up Time tS
N
o Load 20 μs
EN Pull Down Resistor RPD 3.0
MΩ
VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 25
Thermal Resistance
(Junction to Case) θJC
SOIC-8 74.6
°C/W
PSOP-8 43.7
SOT-223 50.9
TO-252-2 (1) /(3) /(4) 35
TO-263-3 22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
9
Electrical Characteristics (Continued)
AP2114-1.5 Electrical Characteristics (Note 2)
(VIN=2.5V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OCTA85OC
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage VOUT V
IN =2.5V, 1mA IOUT 30mA VOUT
×98.5% 1.5 VOUT
×101.5% V
Input Voltage VIN 6.0 V
Maximum Output Current IOUT(MAX) V
IN=2.5V, VOUT=1.478V to 1.523V 1 A
Load Regulation
VOUT/VOUT
IOUT VIN=2.5V, 1mA IOUT 1A 0.2 1 %/A
Line Regulation VOUT/VOUT
VIN
2.5VVIN6V, IOUT=30mA -0.1 0.02 0.1 %/V
Dropout Voltage VDROP I
OUT=1.0A 800 1000 mV
Quiescent Current IQ V
IN=2.5V, IOUT=0mA 60 75
μA
Power Supply Rejectio
n
Ratio PSRR
Ripple 1Vp-p
VIN=2.5V,
IOUT=100mA
f=100Hz 68
dB
f=1KHz 68
Output Voltage
Temperature Coefficient
VOUT/VOUT
T IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE 10Hz f 100kHz (No Load) 30 μVRMS
VEN High Voltage VIH Enable logic high, regulator on 1.5
V
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current ISTD V
IN=2.5V, VEN in OFF mode 0.01 1.0 μA
Start-up Time tS
N
o Load 20 μs
EN Pull Down Resistor RPD 3.0
MΩ
VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 25
Thermal Resistance
(Junction to Case) θJC
SOIC-8 74.6
°C/W
PSOP-8 43.7
SOT-223 50.9
TO-252-2 (1) /(3) /(4) 35
TO-263-3 22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
10
Electrical Characteristics (Continued)
AP2114-1.8 Electrical Characteristics (Note 2)
(VIN=2.8V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OCTA85OC
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage VOUT V
IN =2.8V, 1mA IOUT 30mA VOUT
×98.5% 1.8 VOUT
×101.5% V
Maximum Output Current IOUT(MAX) V
IN=2.8V, VOUT=1.773V to 1.827V 1.0 A
Load Regulation VOUT/VOUT
IOUT VIN=2.8V, 1mA IOUT 1A 0.2 1.0 %/A
Line Regulation VOUT/VOUT
VIN 2.8VVIN6V, IOUT=30mA -0.1 0.02 0.1 %/V
Dropout Voltage VDROP I
OUT=1.0A 500 700 mV
Quiescent Current IQ V
IN=2.8V, IOUT=0mA 60 75
μA
Power Supply Rejectio
n
Ratio PSRR
Ripple 1Vp-p
VIN=2.8V,
IOUT=100mA
f=100Hz 68
dB
f=1KHz 68
Output Voltage
Temperature Coefficient
VOUT/VOUT
T IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE 10Hz f 100kHz (No load) 30 μVRMS
VEN High Voltage VIH Enable logic high, regulator on 1.5
V
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current ISTD V
IN=2.8V, VEN in OFF mode 0.01 1.0 μA
Start-up Time tS
N
o Loa
d
20
μs
EN Pull Down Resistor RPD 3.0 MΩ
VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 25
Thermal Resistance
(Junction to Case) θJC
SOIC-8 74.6
°C /W
PSOP-8 43.7
SOT-223 50.9
TO-252-2 (1) /(3) /(4) 35
TO-263-3 22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
11
Electrical Characteristics (Continued)
AP2114-2.5 Electrical Characteristics (Note 2)
(VIN=3.5V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OCTA85OC
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage VOUT V
IN =3.5V, 1mA IOUT 30mA VOUT
×98.5% 2.5 VOUT
×101.5% V
Maximum Output Current IOUT(MAX) V
IN=3.5V, VOUT=2.463V to 2.537V 1.0 A
Load Regulation
VOUT/VOUT
IOUT
Vout=2.5V, VIN=Vout+1V
1mA IOUT 1A 0.2 1.0 %/A
Line Regulation VOUT/VOUT
VIN 3.5VVIN6V, IOUT=30mA -0.1 0.02 0.1 %/V
Dropout Voltage VDROP I
OUT =1A 450 750 mV
Quiescent Current IQ V
IN=3.5V, IOUT=0mA 60 80
μA
Power Supply Rejectio
n
Ratio PSRR
Ripple 1Vp-p
VIN=3.5V,
IOUT=100mA
f=100Hz 65
dB
f=1KHz 65
Output Voltage
Temperature Coefficient
VOUT/VOUT
T IOUT=30mA
±30 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE 10Hz f 100kHz 30
μVRMS
VEN High Voltage VIH Enable logic high, regulator on 1.5
V
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current ISTD V
IN=3.5V, VEN in OFF mode 0.01 1.0 μA
Start-up Time tS
N
o Loa
d
20
μs
EN Pull Down Resistor RPD 3.0
MΩ
VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 25
Thermal Resistance
(Junction to Case) θJC
SOIC-8 74.6
°C /W
PSOP-8 43.7
SOT-223 50.9
TO-252-2 (1) /(3) /(4) 35
TO-263-3 22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
12
Electrical Characteristics (Continued)
AP2114-3.3 Electrical Characteristics (Note 2)
(VIN=4.3V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OCTA85OC
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
Output Voltage VOUT V
IN =4.3V, 1mA IOUT 30mA VOUT
×98.5% 3.3 VOUT
×101.5% V
Maximum Output Current IOUT(MAX) V
IN =4.3V, VOUT=3.25V to 3.35V 1.0 A
Load Regulation VOUT/VOUT
IOUT VIN=4.3V, 1mA IOUT 1A 0.2 1.0 %/A
Line Regulation VOUT/VOUT
VIN 4.3VVIN6V, IOUT=30mA -0.1 0.02 0.1 %/V
Dropout Voltage VDROP I
OUT=1A 450 750 mV
Quiescent Current IQ V
IN=4.3V, IOUT=0mA 65 90
μA
Power Supply Rejectio
n
Ratio PSRR
Ripple 1Vp-p
VIN=4.3V,
IOUT=100mA
f=100Hz 65
dB
f=1KHz 65
Output Voltage
Temperature Coefficient
VOUT/VOUT
T IOUT=30mA
±30 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE 10Hz f 100kHz (No load) 30 μVRMS
VEN High Voltage VIH Enable logic high, regulator on 1.5
V
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current ISTD V
IN=4.3V, VEN in OFF mode 0.01 1.0 μA
Start-up Time tS
N
o Load 20 μs
EN Pull Down Resistor RPD 3.0 MΩ
VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 25
Thermal Resistance
(Junction to Case) θJC
SOIC-8 74.6
°C/W
PSOP-8 43.7
SOT-223 50.9
TO-252-2 (1) /(3) /(4) 35
TO-263-3 22
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
13
Electrical Characteristics (Continued)
AP2114-ADJ Electrical Characteristics (Note 2)
(VIN=2.5V, CIN=4.7μF (Ceramic), COUT=4.7μF (Ceramic), Typical TA= 25°C, Bold typeface applies over -40OCTA85OC
ranges, unless otherwise specified (Note 3))
Parameter Symbol Test Conditions Min Typ Max Unit
Reference Voltage VREF V
IN =2.5V, 1mA IOUT 30mA VREF
×98.5% 0.8 VREF
×101.5% V
Input Voltage VIN 6.0 V
Maximum Output Current IOUT(MAX) V
IN=2.5V, VOUT= 0.788V to 0.812V 1 A
Load Regulation
VOUT/VOUT
IOUT VIN=2.5V, 1mA IOUT 1A 0.2 1 %/A
Line Regulation VOUT/VOUT
VIN
2.5VVIN6V, IOUT=30mA -0.1 0.02 0.1 %/V
Quiescent Current IQ V
IN=2.5V, IOUT=0mA 60 75
μA
Power Supply Rejectio
n
Ratio PSRR
Ripple 1Vp-p
VIN=2.5V,
IOUT=100mA
f=100Hz 68
dB
f=1KHz 68
Output Voltage
Temperature Coefficient
VOUT/VOUT
T IOUT=30mA, TA =-40°C to 85°C ±30 ppm/°C
Short Current Limit ISHORT V
OUT=0V 50 mA
RMS Output Noise VNOISE 10Hz f 100kHz (No Load) 30 μVRMS
VEN High Voltage VIH Enable logic high, regulator on 1.5
V
VEN Low Voltage VIL Enable logic low, regulator off 0.4
Standby Current ISTD V
IN=2.5V, VEN in OFF mode 0.01 1.0 μA
Start-up Time tS
N
o Load 20 μs
EN Pull Down Resistor RPD 3.0
MΩ
VOUT Discharge Resistor RDCHG Set EN pin at Low 60 Ω
Thermal Shutdown
Temperature TOTSD 160
°C
Thermal Shutdown
Hysteresis THYOTSD 25
Thermal Resistance
(Junction to Case) θJC SOIC-8 74.6
°C/W
PSOP-8 43.7
Note 2: To prevent the Short Circuit Current protection feature from being prematurely activated, the input
voltage must be applied before a current source load is applied.
Note 3: Production testing at TA=25°C. Over temperature specifications guaranteed by design only.
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
14
Typical Performance Characteristics
Figure 4. Ground Current vs. Output Current Figure 5. Ground Current vs. Output Current
Figure 6. Ground Current vs. Output Current Figure 7. Ground Current vs. Output Current
0.0 0.2 0.4 0.6 0.8 1.0
0
50
100
150
200
250
300
350
400
Continuous Airflow 10scfm
TA=-40OC
TA=25OC
TA=85OC
AP2114_1.8V
VIN=2.8V
CIN=4.7μF
COUT=4.7μF
Ground Current (μA)
Output Current (A)
0.0 0.2 0.4 0.6 0.8 1.0
0
50
100
150
200
250
300
350
400
Continuous Airflow 10scfm
TA=-40OC
TA=25OC
TA=85OC
AP2114_2.5V
VIN=3.5V
CIN=4.7μF
COUT=4.7μF
Ground Current (μA)
Output Current (A)
0.0 0.2 0.4 0.6 0.8 1.0
0.0
50.0
100.0
150.0
200.0
250.0
300.0
350.0
400.0
450.0
500.0
Continuous Airflow 10scfm
AP2114_3.3V
TA=-40OC
TA=25OC
TA=85OC
VIN=4.3V
Ground Current (μA)
Output Current (A)
0.0 0.2 0.4 0.6 0.8 1.0
0
50
100
150
200
250
300
350
400
450
500
AP2114_1.2V
TA=-40OC
TA=25OC
TA=85OC
VIN=2.5V
Ground Current (μA)
Output Current (A)
Continuous Airflow 10scfm
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
15
Typical Performance Characteristics (Continued)
Figure 8. Quiescent Current vs. Temperature Figure 9. Quiescent Current vs. Temperature
Figure 10. Quiescent Current vs. Temperature Figure 11. Quiescent Current vs. Temperature
-40-200 20406080
30
40
50
60
70
80
90
100
Continuous Airflow 10scfm
VIN=2.5V
IOUT=0mA
AP2114_1.2V
Quiescent Current (μA)
Temperature (OC)
-40 -20 0 20 40 60 80 100 120
0
10
20
30
40
50
60
70
80
90
100
Continuous Airflow 10scfm
AP2114_1.8V
VIN=2.8V
No Load
CIN=4.7μF
COUT=4.7μF
Quiescent Current (μA)
Temperature (OC)
-40-200 20406080
30
40
50
60
70
80
90
100
Continuous Airflow 10scfm
VIN=4.3V
IOUT=0mA
AP2114_3.3V
Quiescent Current (μA)
Temperature (OC)
-40 -20 0 20 40 60 80 100 120
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Continuous Airflow 10scfm
AP2114_2.5V
VIN=3.5V
No Load
CIN=4.7μF
COUT=4.7μF
Quiescent Current (μA)
Temperature (OC)
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
16
Typical Performance Characteristics (Continued)
Figure 12. Quiescent Current vs. Input Voltage Figure 13. Quiescent Current vs. Input Voltage
Figure 14. Quiescent Current vs. Input Voltage Figure 15. Quiescent Current vs. Input Voltage
23456
10
20
30
40
50
60
70
80
90
100
Continuous Airflow 10scfm
TA= -40OC
TA= 25OC
TA= 85OC
AP2114_1.2V
IOUT=0mA
Quiescent Current (μA)
Input Voltage (V)
3.5 4.0 4.5 5.0 5.5 6.0
30
40
50
60
70
80
90
100
110
Continuous Airflow 10scfm
AP2114_3.3V
IOUT=0mA
Quiescent Current (μA)
Input Voltage (V)
TA= -40OC
TA= 25OC
TA= 85OC
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
30
40
50
60
70
80
90
100
110
Continuous Airflow 10scfm
Quiescent Current (μA)
Input Voltage (V)
AP2114_1.8V
IOUT=0mA
TA=25oC
TA=-40oC
TA=85oC
2.53.03.54.04.55.05.56.0
30
40
50
60
70
80
90
100
110
Continuous Airflow 10scfm
Quiescent Current (μA)
Input Voltage (V)
AP2114_2.5V
IOUT=0mA
TA=25oC
TA=-40oC
TA=85oC
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
17
Typical Performance Characteristics (Continued)
Figure 16. Output Voltage vs. Temperature Figure 17. Output Voltage vs. Temperature
Figure 18. Output Voltage vs. Temperature Figure 19. Output Voltage vs. Temperature
-40-200 20406080
1.180
1.184
1.188
1.192
1.196
1.200
1.204
1.208
1.212
1.216
Continuous Airflow 10scfm
AP2114_1.2V
Output Voltage (V)
Temperature (OC)
IOUT=10mA
IOUT=100mA
IOUT=500mA
IOUT=1000mA
VIN=2.5V
-40 -20 0 20 40 60 80
2.40
2.42
2.44
2.46
2.48
2.50
2.52
2.54
Continuous Airflow 10scfm
IOUT=10mA
IOUT=100mA
IOUT=500mA
IOUT=1000mA
AP2114_2.5V
VIN=3.5V
CIN=4.7μF
COUT=4.7μF
Output Voltage (V)
Temperature (OC)
-40-200 20406080
3.25
3.26
3.27
3.28
3.29
3.30
3.31
3.32
3.33
3.34
3.35
Continuous Airflow 10scfm
AP2114_3.3V
VIN=4.3V
Output Voltage (V)
Temperature (OC)
IOUT=10mA
IOUT=100mA
IOUT=500mA
IOUT=1000mA
-40-200 20406080
1.70
1.72
1.74
1.76
1.78
1.80
1.82
1.84
1.86
1.88
1.90
Continuous Airflow 10scfm
IOUT=10mA
IOUT=100mA
IOUT=500mA
IOUT=1000mA
AP2114_1.8V
VIN=2.8V
CIN=4.7μF
COUT=4.7μF
Output Voltage (V)
Temperature (OC)
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
18
Typical Performance Characteristics (Continued)
Figure 20. Output Voltage vs. Input Voltage Figure 21. Output Voltage vs. Input Voltage
Figure 22. Output Voltage vs. Input Voltage Figure 23. Output Voltage vs. Input Voltage
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Continuous Airflow 10scfm
TA=-40OC
TA=25OC
TA=85OC
AP2114_3.3V
Output Voltage (V)
Input Voltage (V)
CIN=4.7μF
COUT=4.7μF
IOUT=10mA
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Continuous Airflow 10scfm
Output Voltage (V)
Input Voltage (V)
AP2114_1.8V
TA=-40oC
TA=25oC
TA=85oC
CIN=4.7μF
COUT=4.7μF
IOUT=10mA
123456
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Continuous Airflow 10scfm
TA=-40OC
TA=25OC
TA=85OC
AP2114_1.2V
Output Voltage (V)
Input Voltage (V)
CIN=4.7μF
COUT=4.7μF
IOUT=10mA
1234567
0.0
0.5
1.0
1.5
2.0
2.5
Continuous Airflow 10scfm
AP2114_2.5V
CIN=4.7μF
COUT=4.7μF
IOUT=10mA
TA=-40OC
TA=25OC
TA=85OC
Output Voltage (V)
Input Voltage (V)
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
19
Typical Performance Characteristics (Continued)
Figure 24. Output Voltage vs. Output Current Figure 25. Output Voltage vs. Output Current
Figure 26. Output Voltage vs. Output Current Figure 27. Output Voltage vs. Output Current
0.0 0.2 0.4 0.6 0.8 1.0
1.150
1.155
1.160
1.165
1.170
1.175
1.180
1.185
1.190
1.195
1.200
1.205
1.210
Continuous Airflow 10scfm
AP2114_1.2V
VIN=2.5V
Output Voltage (V)
Output Current (A)
TA=-40OC
TA=25OC
TA=85OC
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Continuous Airflow 10scfm
TA=-40OC
TA=25OC
TA=85OC
Output Voltage (V)
Output Current (A)
AP2114_1.8V
VIN=2.8V
CIN=4.7μF
COUT=4.7μF
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Continuous Airflow 10scfm
VIN=2.5V
VIN=3.3V
AP2114_1.2V
TA=25OC
CIN=4.7μF
COUT=4.7μF
Output Voltage (V)
Output Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Continuous Airflow 10scfm
TA=-40OC
TA=25OC
TA=85OC
Output Voltage (V)
Output Current (A)
AP2114_2.5V
VIN=3.5V
CIN=4.7μF
COUT=4.7μF
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
20
Typical Performance Characteristics (Continued)
Figure 28. Output Voltage vs. Output Current Figure 29. Output Voltage vs. Output Current
Figure 30. Dropout Voltage vs. Output Current Figure 31. Dropout Voltage vs. Output Current
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Continuous Airflow 10scfm
VIN=4.3V
VIN=5V
AP2114_3.3V
TA=25OC
CIN=4.7μF
COUT=4.7μF
Output Voltage (V)
Output Current (A)
0.0 0.2 0.4 0.6 0.8 1.0
3.27
3.28
3.29
3.30
3.31
3.32
3.33
3.34
3.35
Continuous Airflow 10scfm
AP2114_3.3V
TA=-40OC
TA=25OC
TA=85OC
VIN=4.3V
Output Voltage (V)
Output Current (A)
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Continuous Airflow 10scfm
TA=-40OC
TA=25OC
TA=85OC
AP2114_1.8V
VIN=2.8V
CIN=4.7μF
COUT=4.7μF
Dropout Voltage (V)
Output Current (A)
0.0 0.2 0.4 0.6 0.8 1.0
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
Continuous Airflow 10scfm
TA=-40OC
TA=25OC
TA=85OC
AP2114_2.5V
VIN=3.5V
CIN=4.7μF
COUT=4.7μF
Dropout Voltage (V)
Output Current (A)
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
21
Typical Performance Characteristics (Continued)
Figure 32. Dropout Voltage vs. Output Current Figure 33. Max. Output Current vs. Input Voltage
Figure 34. Max. Output Current vs. Input Voltage Figure 35. Max. Output Current vs. Input Voltage
0.0 0.2 0.4 0.6 0.8 1.0
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
Continuous Airflow 10scfm
AP2114_3.3V
TA=-40OC
TA=25OC
TA=85OC
Dropout Voltage (V)
Output Current (A)
CIN=4.7μF
COUT=4.7μF
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Continuous Airflow 10scfm
Max. Output Current (A)
Input Voltage (V)
AP2114_1.8V
CIN=4.7μF
COUT=4.7μF
VOUT=1.8X(1+1.5%)
3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Continuous Airflow 10scfm
Max. Output Current (A)
Input Voltage (V)
AP2114_2.5V
CIN=4.7μF
COUT=4.7μF
VOUT=2.5X(1+1.5%)
2.02.53.03.54.04.55.05.56.
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Continuous Airflow 10scfm
AP2114_1.2V
M
ax.
O
u
t
pu
t
C
urren
t
(A)
Input Voltage (V)
TA=25OC
CIN=4.7μF
COUT=4.7μF
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
22
Typical Performance Characteristics (Continued)
Figure 36. Max. Output Current vs. Input Voltage Figure 37. Max. Output Current vs. Input Voltage
Note 4: Considering power dissipation and thermal behavior, we suggest provide enough design margins in
application design which are no less than 30% at least.
Figure 38. Output Short Current vs. Temperature Figure 39. Output Short Current vs. Temperature
4.0 4.5 5.0 5.5 6.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Continuous Airflow 10scfm
AP2114_3.3V
Max. Output Current (A)
Input Voltage (V)
CIN=4.7μF
COUT=4.7μF
TA=25OC
-40 -20 0 20 40 60 80
20
30
40
50
60
70
80
90
100
Continuous Airflow 10scfm
VIN=2.5V
Output Short Current (mA)
Temperature (OC)
AP2114_1.2V
-40-200 20406080100120
20
30
40
50
60
70
80
90
100
Continuous Airflow 10scfm
AP2114_1.8V
VIN=2.8V
CIN=4.7μF
COUT=4.7μF
Output Short Current (mA)
Temperature (OC)
4.0 4.5 5.0 5.5 6.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
AP2114-3.3V
TO-252-2 (1)/(3)
Max. Output Current (A)
Input Voltege (V)
TA=-30OC
TA=25OC
TA=40OC
TA=50OC
TA=85OC
Copper Heat Spreader Area:100mm2
Still air
Note 4
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
23
Typical Performance Characteristics (Continued)
Figure 40. Output Short Current vs. Temperature Figure 41. Output Short Current vs. Temperature
Figure 42. PSRR vs. Frequency Figure 43. PSRR vs. Frequency
-40-200 20406080100120
20
30
40
50
60
70
80
90
100
Continuous Airflow 10scfm
AP2114_2.5V
VIN=3.5V
CIN=4.7μF
COUT=4.7μF
Output Short Current (mA)
Temperature (OC)
-40-200 20406080
20
30
40
50
60
70
80
90
100
Continuous Airflow 10scfm
VIN=4.3V
AP2114_3.3V
Output Short Current (mA)
Temperature (OC)
100 1k 10k 100k
0
10
20
30
40
50
60
70
80
AP2114_1.2V
TA=25OC
CIN=1μF
COUT=4.7μF
IOUT=10mA
PSRR (dB)
Frequency (Hz)
Ripple=1Vp-p
100 1k 10k 100k
0
10
20
30
40
50
60
70
80
AP2114_1.8V
TA=25OC
CIN=4.7μF
COUT=4.7μF
IOUT=10mA
PSRR (dB)
Frequency (Hz)
Ripple=1Vp-p
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
24
Typical Performance Characteristics (Continued)
Figure 44. PSRR vs. Frequency Figure 45. PSRR vs. Frequency
0A
1A C
IN
=4.7μF
C
OUT
=4.7μF
Figure 46. Load Transient
100 1k 10k 100k
0
10
20
30
40
50
60
70
80
AP2114_2.5V
TA=25OC
CIN=4.7μF
COUT=4.7μF
IOUT=10mA
PSRR (dB)
Frequency (Hz)
Ripple=1Vp-p
100 1k 10k 100k
0
10
20
30
40
50
60
70
80
IOUT=10mA
IOUT=100mA
AP2114_3.3V TA=25OC
CIN=1μF
COUT=4.7μF
PSRR (dB)
Frequency (Hz)
Ripple=1Vp-p
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
25
Typical Application
Figure 47. Typical Application of AP2114
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
26
Mechanical Dimensions
SOT-223 Unit: mm(inch)
3.300(0.130)
3.700(0.146)
6.700(0.264)
7.300(0.287)
2.900(0.114)
3.100(0.122)
0.610(0.024)
0.810(0.032)
2.300(0.091)
TYP
6.300(0.248)
6.700(0.264)
1.750(0.069)
TYP
4.500(0.177)
4.700(0.185)
0.020(0.001)
0.100(0.004)
1.520(0.060)
1.800(0.071)
1.500(0.059)
1.700(0.067)
0.250(0.010)
0.350(0.014)
0.250(0.010)
0°
10°
0.900(0.035)
MIN
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
27
Mechanical Dimensions (Continued)
TO-252-2 (1) Unit: mm(inch)
1.350(0.053)
1.650(0.065)
0.600(0.024)
0.900(0.035)
3.800REF(0.150REF)
4.800(0.189)
6.500(0.256)
1.400(0.055)
1.780(0.070)
9.500(0.374)
9.900(0.390)
2.550(0.100)
2.900(0.114) 5.450(0.215)
6.250(0.246)
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
28
Mechanical Dimensions (Continued)
TO-252-2 (3) Unit: mm(inch)
1.29±0.1
2.900REF
1.400(0.055)
1.700(0.067)
0.470(0.019)
0.600(0.024)
5
9
0
8
9.800(0.386)
10.400(0.409)
2.200(0.087)
2.380(0.094)
0.900(0.035)
1.100(0.043)
4.700REF
6.500(0.256)
6.700(0.264)
5.130(0.202)
5.460(0.215)
0.150(0.006)
0.750(0.030)
6.000(0.236)
6.200(0.244)
0.720(0.028)
0.850(0.033)
2.286(0.090)
BSC
0.720(0.028)
0.900(0.035)
0.900(0.035)
1.250(0.049)
1.800REF
8
0
0.600(0.024)
1.000(0.039)
7
3
9
5
5.250REF
Option 1
Option 2
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
29
Mechanical Dimensions (Continued)
TO-252-2 (4) Unit: mm(inch)
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
30
Mechanical Dimensions (Continued)
TO-263-3 Unit: mm(inch)
7°
3°
7°
8.640(0.340)
9.650(0.380)
0.990(0.039)
0.510(0.020)
2.540(0.100)
1.150(0.045)
9.650(0.380)
3°
14.760(0.581)
8.840(0.348)
2.640(0.104)
0.020(0.001)
8°
2°
0°
6°
0.380(0.015)
2.390(0.094)
0.360(0.014)
2.200(0.087)
70°
10.290(0.405)
4.070(0.160)
4.820(0.190)
1.390(0.055)
1.150(0.045)
1.390(0.055)
2.540(0.100)
1.270(0.050)
1.390(0.055)
2.690(0.106)
15.740(0.620)
0.250(0.010)
2.700(0.106)
0.400(0.016)
5.600(0.220)
7.420(0.292)
7.980(0.314)
2.540(0.100)
2.540(0.100)
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
31
Mechanical Dimensions (Continued)
SOIC-8 Unit: mm(inch)
R0.150(0.006)
Data Sheet
1A LOW NOISE CMOS LDO REGULATOR WITH ENABLE AP2114
Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited
32
Mechanical Dimensions (Continued)
PSOP-8 Unit: mm(inch)
3.202(0.126)
3.402(0.134)
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corporation
30920 Huntwood Ave. Hayward,
CA 94544, U.S.A
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- IC Design Group
Advanced Analog Circuits (Shanghai) Corporation
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Tel: +86-21-24162266, Fax: +86-21-24162277

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IC REG LINEAR 3.3V 1A SOT223
Available Quantity95746
Unit Price39
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Unit Price65.768