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CE3512K2 Datasheet

CEL

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Datasheet

CDS-0018-05 (Issue B)
1
DESCRIPTION
Super Low Noise and High Gain
Hollow (Air Cavity) Plastic package
FEATURES
Super Low noise figure and high associated gain:
NF = 0.30 dB TYP., Ga = 13.7 dB TYP.
@VDS = 2 V, ID = 10 mA, f = 12 GHz
ORDERING INFORMATION
PACKAGE
Micro-X plastic package
APPLICATIONS
KU Band LNB (Low Noise Block)
Suitable for 1st Stage
Part Number
Order Number
Package
Marking
Description
CE3512K2
CE3512K2-C1
Micro-X plastic
package
C5
Embossed tape 8 mm wide
Pin 4 (Gate) faces the
perforation side of the tape
MOQ 10 kpcs/reel
This document is subject to change without notice.
Date Published: Nov 2018
RF Low Noise FET
CE3512K2
12 GHz Super Low Noise FET in Hollow Plastic PKG
CE3512K2
This document is subject to change without notice.
2
Pin No. Pin Name
1
Source
2
Drain
3
Source
4
Gate
PIN CONFIGURATION AND
INTERNAL BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(TA = +25˚C, unless otherwise specified)
Parameter Symbol Rating Unit
Drain to Source Voltage VDS 4.0
V
Gate to Source Voltage VGS -3.0
V
Drain Current ID I
DSS
mA
Gate Current IG 80 µA
Total Power Dissipation P
tot
125 mW
Channel Temperature Tch +150 °C
Storage Temperature T
stg
-55 to +125 °C
Operation Temperature Top -55 to +125Note °C
Note Refer to Total Power Dissipation vs. Ambient Temperature graph on page 4
RECOMMENDED OPERATING RANGE
(TA = +25˚C, unless otherwise specified)
Parameter Symbol MIN. TYP. MAX. Unit
Drain to Source Voltage V
DS
+1 +2 +3
V
Drain Current ID
5
10 15 mA
CE3512K2
This document is subject to change without notice.
3
ELECTRICAL CHARACTERISTICS
(TA = +25˚C, unless otherwise specified)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Gate to Source Leak Current IGSO VGS = -3.0V
-
0.4 10 µA
Saturated Drain Current IDSS VDS = 2V, VGS = 0V 27 47.5 68 mA
Gate to Source Cut-off Voltage VGS(off) VDS = 2V, ID = 120µA -1.10 -0.75 -0.39
V
Transconductance Gm VDS = 2V, ID = 10mA 54 69
-
mS
Noise Figure NF VDS = 2V, ID = 10mA,
f = 12GHz
-
0.30 0.50 dB
Associated Gain Ga 12.5 13.7
-
dB
CE3512K2
This document is subject to change without notice.
4
TYPICAL CHARACTERISTICS :
(TA=+25, unless otherwise specified)
TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
DRAIN CURRENT VS.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT VS.
DRAIN TO SOURCE VOLTAGE
MINIMUM NOISE FIGURE &
ASSOCIATED GAIN VS. DRAIN CURRENT
CE3512K2
This document is subject to change without notice.
5
S-PARAMETERS
S-Parameters are available on CELs Part Summary page under S-parameters
RECOMMENDED SOLDERING CONDITIONS
Recommended Soldering Conditions are available on CELs Part Summary page under Associated Documents
PACKAGE DIMENSIONS
Micro-X plastic package
CE3512K2
This document is subject to change without notice.
6
REVISION HISTORY
Version
Change to current version
Page(s)
CDS-0018-04 (Issue A)
February 12, 2016
Initial datasheet
N/A
CDS-0018-04 (Issue B)
April 27, 2016
Updated Marking Information
1, 2, 3
CDS-0018-05 (Issue A)
July 29, 2016
Updated Specs in “Absolute Maximum Ratings Table
Added “Typical Characteristics” section (graphs)
Added “S-Parameters” and “Recommended Soldering
Conditions” sections
2, 4, 5
CDS-0018-05 (Issue B)
Nov 29, 2018
Updated Applications
Updated marking by adding a dot to the package Gate
1, 2, 5
CE3512K2
This document is subject to change without notice.
7
[CAUTION]
All information included in this document is current as of the date this document is issued. Such information,
however, is subject to change without any prior notice.
You should not alter, modify, copy, or otherwise misappropriate any CEL product, whether in whole or in part.
CEL does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of
third parties by or arising from the use of CEL products or technical information described in this document. No
license, expressed, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual
property rights of CEL or others.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the
operation of semiconductor products and application examples. You are fully responsible for the incorporation of
these circuits, software, and information in the design of your equipment. CEL assumes no responsibility for any
losses incurred by you or third parties arising from the use of these circuits, software, or information.
CEL has used reasonable care in preparing the information included in this document, but CEL does not warrant
that such information is error free. CEL assumes no liability whatsoever for any damages incurred by you resulting
from errors in or omissions from the information included herein.
Although CEL endeavors to improve the quality and reliability of its products, semiconductor products have specific
characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions.
Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or
damage caused by fire in the event of the failure of a CEL product, such as safety design for hardware and software
including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging
degradation or any other appropriate measures
Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final
products or system manufactured by you.
Please use CEL products in compliance with all applicable laws and regulations that regulate the inclusion or use of
controlled substances, including without limitation, the EU RoHS Directive.
CEL assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and
regulations.
This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent
of CEL.
Please contact CEL if you have any questions regarding the information contained in this document or CEL
products, or if you have any other inquiries.
CE3512K2
This document is subject to change without notice.
8
[CAUTION]
Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can
damage this device. This device must be protected at all times from ESD. Static charges may easily
produce potentials of several kilovolts on the human body or
equipment, which can discharge
without detection. Industry-standard ESD precautions should be used at all times.
CEL Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054 • Tel: (408) 919-2500 • www.cel.com
For a complete list of sales offices, representatives and distributors,
Please visit our website: www.cel.com/contactus
For inquiries email us at rfw@cel.com
[CAUTION]
This product uses gallium arsenide (GaAs) of the toxic substance appointed in laws and ordinances.
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
Do not dispose in fire or break up this product.
Do not chemically make gas or powder with this product.
When discarding this product, please obey the laws of your country.
Do not lick the product or in any way allow it to enter the mouth.

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