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Texas Instruments
Smart Bypass Diode
Vishay Semiconductor Diodes Division
Small Signal Fast Switching Diode
 
Nexperia USA Inc.
General Purpose Controlled Avalanche Diodes
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Small Signal Fast Switching Diode

Bypass Diode

Vishay Semiconductor Diodes Division

Features
  • Silicon epitaxial planar diode
  • Fast switching diode
Specifications
  • Current - Average Rectified (Io):1A ~ 3A
  • Current - Reverse Leakage @ Vr:5µA ~ 10µA
  • Current Coupled to Voltage - Forward (Vf) (Max) @ If:1A ~ 3A
  • Diode Type:Standard
  • Mounting Type:Surface Mount
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Reverse Recovery Time (trr):50ns ~ 150ns
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Voltage - DC Reverse (Vr) (Max):50V ~ 300V
  • Voltage - Forward (Vf) (Max) @ If:1.1V ~ 1.3V
  • Voltage Coupled to Current - Reverse Leakage @ Vr:50V ~ 300V
Parts
Associated Product
Vishay Semiconductor Diodes Division Standard Diode
Category: Semiconductors, Development Tools-Discrete Semiconductors-Diodes, Rectifiers-Diodes - Single-Standard