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Vishay Semiconductor Diodes Division
Small Signal Fast Switching Diode

Small Signal Fast Switching Diode
Bypass Diode
Vishay Semiconductor Diodes Division
Datasheets:
Features
- Silicon epitaxial planar diode
- Fast switching diode
Specifications
- Current - Average Rectified (Io):1A ~ 3A
- Current - Reverse Leakage @ Vr:5µA ~ 10µA
- Current Coupled to Voltage - Forward (Vf) (Max) @ If:1A ~ 3A
- Diode Type:Standard
- Mounting Type:Surface Mount
- Operating Temperature - Junction:-55°C ~ 150°C
- Reverse Recovery Time (trr):50ns ~ 150ns
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max):50V ~ 300V
- Voltage - Forward (Vf) (Max) @ If:1.1V ~ 1.3V
- Voltage Coupled to Current - Reverse Leakage @ Vr:50V ~ 300V
Parts
![]() | ES3F-E3/57T | DIODE GEN PURP 300V 3A DO214AB | Standard | 300V | 3A | 1.1V | DO-214AB, SMC | ![]() |
![]() | RS1A-E3/5AT | DIODE GEN PURP 50V 1A DO214AC | Standard | 50V | 1A | 1.3V | DO-214AC, SMA | ![]() |
Associated Product
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Category:
Semiconductors, Development Tools-Discrete Semiconductors-Diodes, Rectifiers-Diodes - Single-Standard
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