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Silicon Carbide Schottky Diode
Microsemi Power Products Group
Silicon Carbide Schottky Diode
 
Rohm Semiconductor
Silicon Carbide Schottky Diode
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Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode

Microsemi Power Products Group

Features
  • Very low stray inductance
  • High level of integration
  • Outstanding performance at high frequency operation
  • Low losses
  • Low noise switching
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
Applications
  • Uninterruptible Power Supply (UPS)
  • Induction heating
  • Welding equipment
  • High speed rectifiers
Specifications
  • Current - Average Rectified (Io) (per Diode):50A
  • Current - Reverse Leakage @ Vr:1mA
  • Current Coupled to Voltage - Forward (Vf) (Max) @ If:50A
  • Diode Configuration:2 Independent
  • Diode Type:Silicon Carbide Schottky
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Packaging:Bulk
  • Reverse Recovery Time (trr):0ns
  • Speed:No Recovery Time > 500mA (Io)
  • Supplier Device Package:SOT-227
  • Voltage - DC Reverse (Vr) (Max):600V
  • Voltage - Forward (Vf) (Max) @ If:1.8V
  • Voltage Coupled to Current - Reverse Leakage @ Vr:600V
Parts